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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yasuo Nara (Fujitsu Semiconductor)
Vice Chair Yuzou Oono (Univ. of Tsukuba)
Secretary Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

Conference Date Thu, Nov 15, 2012 10:00 - 15:45
Fri, Nov 16, 2012 10:00 - 16:10
Topics  
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.

Thu, Nov 15 AM 
10:00 - 11:45
  10:00-10:05 Opening Talk ( 5 min. )
(1) 10:05-10:55 [Invited Talk]
2012 SISPAD Review
-- quantum transport, new materials, atomistic molecular modeling, and other topics --
Yoshinari Kamakura (Osaka Univ.)
(2) 10:55-11:45 [Invited Talk]
2012 SISPAD Paper Review
-- Compact Model, Device Variability, Device Reliability --
Takahiro Iizuka (Hiroshima Univ.)
  11:45-13:00 Lunch Break ( 75 min. )
Thu, Nov 15 PM 
13:00 - 14:15
(3) 13:00-13:50 [Invited Talk]
High Performance SiC Power Devices and Modules
-- Miniaturization of System by Low-Ron and High Temperature Operation --
Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM)
(4) 13:50-14:15 New design method for power devices using topology optimization based on the adjoint variable method Katsuya Nomura, Tsuguo Kondoh, Tsuyoshi Ishikawa, Atsushi Kawamoto, Tadayoshi Matsumori, Takahide Sugiyama (TCRDL)
  14:15-14:30 Break ( 15 min. )
Thu, Nov 15 PM 
14:30 - 15:45
(5) 14:30-15:20 [Invited Talk]
Fluctuation of MOSFETs from Low-Frequency Noise to Thermal Noise Using a Novel Measurement System beyond 100 MHz
Kenji Ohmori (Uni. of Tsukuba)
(6) 15:20-15:45 Neutral and Attractive Traps in Random Telegraph Signal Noise Phenomena using (100)- and (110)-Oriented CMOSFETs Jiezhi Chen, Izumi Hirano, Kosuke Tatsumura, Yuichiro Mitani (Toshiba Corp)
Fri, Nov 16 AM 
10:00 - 11:40
(7) 10:00-10:25 An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT)
(8) 10:25-10:50 Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS Daiki Sato, Yasuhisa Omura (Kansai Univ.)
(9) 10:50-11:15 Empirical Pseudopotential Calculations of Two-Dimensional Electronic States in 4H-SiC Inversion layers Ryuta Watanabe, Yoshinari Kamakura (Osaka Univ.)
(10) 11:15-11:40 Impact of Discrete Dopant in Characteristics of Nanowire Transistors
-- KMC and NEGF Study --
Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.)
  11:40-13:00 Lunch ( 80 min. )
Fri, Nov 16 PM 
13:00 - 14:40
(11) 13:00-13:25 Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST)
(12) 13:25-13:50 Monte Carlo Simulation of Phonon Transport in Silicon Thin Films Including Realistic Dispersion Relation Kentaro Kukita (Osaka University), Yoshinari Kamakura (Osaka University/JST CREST)
(13) 13:50-14:15 Effect of a three-dimensional strain field on the electronic band structures of carbon nanotubes and graphene sheets Ken Suzuki, Masato Ohnishi, Hideo Miura (Tohoku Univ.)
(14) 14:15-14:40 Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models --
Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST)
  14:40-14:55 Break ( 15 min. )
Fri, Nov 16 PM 
14:55 - 16:10
(15) 14:55-15:20 ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.)
(16) 15:20-15:45 Design method of system LSI and SEA cell type DRAM with tunneling type transistor. Ryosuke Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech)
(17) 15:45-16:10 Design Technology of stacked Type Chain PRAM Readout Sho Kato, Shigeyoshi Watanabe (Shonan Inst, of Tech,)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
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Last modified: 2012-09-19 16:24:53


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