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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Shin-ichiro Takatani (Hitachi), Koichi Murata (NTT)
Assistant Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant Shun-ichiro Ohmi (Tokyo Inst. of Tech.)

() [schedule] [select]

Conference Date Wed, Jul 9, 2008 10:00 - 17:50
Thu, Jul 10, 2008 09:00 - 11:55
Fri, Jul 11, 2008 09:00 - 16:05
Topics 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Conference Place Kaderu27 (Sapporo) 
Address N2-7, Chuo-ku, Sapporo, 060-0002, Japan
Transportation Guide 10 min walk from JR Sapporo st.
http://www.kaderu27.or.jp/index.htm
Sponsors Co-sponsored by The Institute of Electronics Engineers of Korea (IEEK)
Announcement In cooperation with IEEE Electron Devices Society (EDS) Japan Chapter, IEICE Electronics Society, Global COE Program of Center for Next-Generation Information Technology based on Knowledge Discovery and Knowledge Federation (Hokkaido University)
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Wed, Jul 9 AM  Plenary Session
10:00 - 10:40
(1) 10:00-10:40 [Keynote Address]
III-V Semiconductor Epitaxial Nanowires and Their Applications ED2008-39 SDM2008-58
Takashi Fukui, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa (Hokkaido Univ.)
  10:40-10:50 Break ( 10 min. )
Wed, Jul 9 AM  Session 1: Compound Semiconductor Devices
10:50 - 12:20
(1) 10:50-11:15 [Invited Talk]
Growth of InAs quantum dot and device application
Il-Ki Han (KIST)
(2) 11:15-11:40 [Invited Talk]
Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration ED2008-40 SDM2008-59
Toshi-kazu Suzuki (JAIST)
(3) 11:40-12:05 [Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer ED2008-41 SDM2008-60
Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.)
(4) 12:05-12:20 Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition ED2008-42 SDM2008-61 Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.)
  12:20-13:20 Lunch ( 60 min. )
Wed, Jul 9 PM  Session 2: Silicon Devices I
13:20 - 15:45
(1) 13:20-13:45 [Invited Talk]
Guidelines for the Threshold Voltage Control of Metal/HfSiON system ED2008-43 SDM2008-62
Akira Nishiyama, Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Junji Koga, Masato Koyama (Toshiba)
(2) 13:45-14:10 [Invited Talk]
Precise Ion Implantation for Advanced MOS LSIs ED2008-44 SDM2008-63
Toshiharu Suzuki (SEN)
(3) 14:10-14:35 [Invited Talk]
Quantum Modeling of Carrier Transport through Silicon Nano-devices ED2008-45 SDM2008-64
Nobuya Mori, Hideki Minari (Osaka Univ.)
(4) 14:35-15:00 [Invited Talk]
High-K Dielectric for Charge Trap-type Flash Memory Application ED2008-46 SDM2008-65
Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore)
(5) 15:00-15:15 Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors ED2008-47 SDM2008-66 Han-A Jung, Ki-Heung Park (Kyungpook National Univ.), Hyuck-In Kwon (Daegu Univ. Jillyang), Jong-Ho Lee (Kyungpook National Univ.)
(6) 15:15-15:30 A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation ED2008-48 SDM2008-67 Hiroshi Imai (Tohoku Univ.), Masahiko Sugimura, Masafumi Kawasaki (Zeon), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(7) 15:30-15:45 CMOS phase shift Oscillator Using the Conduction of Heat ED2008-86 SDM2008-105 Takaaki Hirai, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.)
  15:45-15:55 Break ( 10 min. )
Wed, Jul 9 PM  Session 3: Emerging Devices I
15:55 - 17:50
(1) 15:55-16:20 [Invited Talk]
Characterization of Carbon Nanotube FETs by Electric Force Microscopy ED2008-49 SDM2008-68
Takashi Mizutani (Nagoya Univ.)
(2) 16:20-16:45 [Invited Talk]
Recent Progress on Nanoprobe and Nanoneedle ED2008-50 SDM2008-69
Masaki Tanemura, Masashi Kitazawa, Yoshitaka Sugita, Ako Miyawaki, Masaki Kutsuna, Yasuhiko Hayashi (Nagoya Inst. of Tech.), Shu Ping Lau (Nanyang Tech. Univ.)
(3) 16:45-17:10 [Invited Talk]
Technical Issues and Applications of Printed Thin-Film Devices ED2008-51 SDM2008-70
Yongtaek Hong, Jaewook Jeong, Jinwoo Kim, Sanbwoo Kim, Minkyoo Kwon, Seungjun Chung (Seoul National Univ.)
(4) 17:10-17:35 [Invited Talk]
A Ta2O5 Solid-electrolyte Switch with Improved Reliability ED2008-52 SDM2008-71
Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Shinji Fujieda (NEC Corp.), Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono (NIMS)
(5) 17:35-17:50 Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation ED2008-53 SDM2008-72 Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.)
Thu, Jul 10 AM  Session 4A: Nonvolatile Memory
09:00 - 10:30
(1) 09:00-09:15 Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories ED2008-54 SDM2008-73 Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.)
(2) 09:15-09:30 Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories ED2008-55 SDM2008-74 Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.)
(3) 09:30-09:45 3-dimensional Terraced NAND(3D TNAND) Flash Memory ED2008-56 SDM2008-75 Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
(4) 09:45-10:00 Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure ED2008-57 SDM2008-76 Sang-Su Park, Se Woong Oh, Kyeong Rok Kim, Hyun Joo Kim, Tae Whan Kim, Kae Dal Kwack (Hanyang Univ.)
(5) 10:00-10:15 Using shielding metal for elimination of floating gate coupling effect Gil-Sung Lee (Seoul National Univ.)
(6) 10:15-10:30 Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) ED2008-58 SDM2008-77 Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
  10:30-10:40 Break ( 10 min. )
Thu, Jul 10 AM  Session 5A: Silicon Devices II
10:40 - 11:55
(1) 10:40-10:55 Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor ED2008-59 SDM2008-78 Tetsuo Endoh, Kousuke Tanaka, Yuto Norifusa (Tohoku Univ.)
(2) 10:55-11:10 Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism ED2008-60 SDM2008-79 Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.)
(3) 11:10-11:25 Current Transport Characteristics for Organic Nonvolatile Memories ED2008-61 SDM2008-80 Woo-Sik Nam, Gon-Sub Lee, Sung-Ho Seo, Young-Hwan Oh, Jae-Gun Park (Hanyang Univ.)
(4) 11:25-11:40 Observation of hexagonal nuclei in the melt-quenched Ge2Sb2Te5 thin films Min-Soo Youm (KIST)
(5) 11:40-11:55 Microstructural and electrical characteristics of Ge1Te1 alloy Yong-Tae Kim (KIST)
Thu, Jul 10 AM  Session 4B: Emerging Devices II
09:00 - 10:15
(1) 09:00-09:15 Single-Electron-Resolution Electrometer Based on Field-Effect Transistor ED2008-62 SDM2008-81 Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi (NTT)
(2) 09:15-09:30 Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors ED2008-63 SDM2008-82 Yoo Chul Kim, Keum-Dong Jung, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.)
(3) 09:30-09:45 Self-Aligned Conducting Polymer Patterns Coated with Carbon Nanotube Using Soft Lithography for Transparent Flexible Electrode of OTFT ED2008-64 SDM2008-83 Jin-Woo Huh, Jin-Woo Huh, Jin-Wook Jeong, Ho-Gyu Yoon (Korea Univ.), Sang Ho Kim (LG Chem.), Byeong-Kwon Ju (Korea Univ.)
(4) 09:45-10:00 Self-Assembled Carbon Nanotube Network Films Field Effect Transistor for Biosensor Application ED2008-65 SDM2008-84 Sunhaera Shin, Youn-Kyoung Baek, Yang-Kyu Choi, Hee-Tae Jung (KAIST)
(5) 10:00-10:15 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network ED2008-66 SDM2008-85 Hong-Quan Zhao (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST), Tamotsu Hashizume (Hokkaido Univ.)
  10:15-10:25 Break ( 10 min. )
Thu, Jul 10 AM  Session 5B: Emerging Devices III
10:25 - 11:55
(1) 10:25-10:40 Fabrication of Silicon Nanowire Devices using AC Dielectrophoresis ED2008-67 SDM2008-86 Su-Heon Hong, Myung-Gil Kang (Korea Univ.), Dong-Mok Whang (Sungkyunkwan Univ.), Sung-Woo Hwang (Korea Univ.)
(2) 10:40-10:55 A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications ED2008-68 SDM2008-87 Hyeok Jun Son, Il Woong Kwon (KAIST), Ho Jun You (ETRI), Yong Soo Lee, Hee Chul Lee (KAIST)
(3) 10:55-11:10 Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces ED2008-69 SDM2008-88 S. Mahboob, Katsunori Makihara, Hirotaka Kaku, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki, Akio Kuroda (Hiroshima Univ.)
(4) 11:10-11:25 Fabrication of methanol concentration sensor by using Pt dot catalyst electrode Seong-Il Kim (KIST)
(5) 11:25-11:40 Fabrication and characterization of silicon nanowire-based biosensor Young-Soo Sohn (KIST)
(6) 11:40-11:55 An Insect Vision-based Single-electron Circuit Performing Motion Detection ED2008-70 SDM2008-89 Andrew Kilinga Kikombo, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.)
Fri, Jul 11 AM  Session 6: Power and High-Frequency Devices I
09:00 - 10:40
(1) 09:00-09:25 [Invited Talk]
SiC Power Transistor and Its Application for DC/DC Converter ED2008-71 SDM2008-90
Makoto Kitabatake (Matsushita Electric Industrial)
(2) 09:25-09:50 [Invited Talk]
Recent Advances on GaN Vertical Power Device ED2008-72 SDM2008-91
Tetsu Kachi (Toyota Central R&D Labs., Inc.)
(3) 09:50-10:15 [Invited Talk]
Millimeter-wave MMIC Technologies for F-band Application ED2008-77 SDM2008-96
Toshihiko Kosugi, Akihiko Hirata, Koichi Murata, Naoya Kukutsu, Yuichi Kado, Takatomo Enoki (NTT)
(4) 10:15-10:40 [Invited Talk]
Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors ED2008-78 SDM2008-97
Taiichi Otsuji (Tohoku Univ.)
  10:40-10:50 Break ( 10 min. )
Fri, Jul 11 AM  Session 7A: Power and High-Frequency Devices II
10:50 - 12:35
(1) 10:50-11:05 High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation ED2008-73 SDM2008-92 Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial)
(2) 11:05-11:20 Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET ED2008-74 SDM2008-93 Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ. of Sci. and Tech.), Yao-Tsung Tsai (National Central Univ.)
(3) 11:20-11:35 The Analysis of the Floating Field Limiting Ring and Field Plate ED2008-75 SDM2008-94 Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien, Ching-Hwa Cheng (Feng Chia Univ.), Yao-Tsung Tsai (National Central Univ.)
(4) 11:35-11:50 A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology ED2008-76 SDM2008-95 Jae-Young Park, Jong-Kyu Song, Chang-Soo Jang, Joon-Tae Jang, San-Hong Kim, Sung-Ki Kim, Taek-Soo Kim (Dongbu HiTek)
(5) 11:50-12:05 Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter ED2008-79 SDM2008-98 HyunChul Kang, Takuya Nishimura, Taiichi Otsuji (Tohoku Univ.), Naoya Watanabe, Tanemasa Asano (Kyushu Univ.)
(6) 12:05-12:20 Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter ED2008-80 SDM2008-99 Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji (Tohoku Univ.)
(7) 12:20-12:35 Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications ED2008-81 SDM2008-100 Sooyeon Kim, Yongho Oh, Jae-Sung Rieh (Korea Univ.)
  12:35-13:35 Lunch ( 60 min. )
Fri, Jul 11 PM  Session 7B: Si Devices III
10:50 - 12:35
(1) 10:50-11:05 Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop ED2008-82 SDM2008-101 Tetsuo Endoh, Masashi Kamiyanagi (Tohoku Univ.)
(2) 11:05-11:20 Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations ED2008-83 SDM2008-102 Masashi Kamiyanagi, Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.)
(3) 11:20-11:35 Implementation of Channel Thermal Noise Model in CMOS RFIC Design ED2008-84 SDM2008-103 Jongwook Jeon, Ickhyun Song, Hyungcheol Shin (Seoul National Univ.)
(4) 11:35-11:50 CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation ED2008-85 SDM2008-104 Kyunghoon Kim, Jinwook Burn (Sogang Univ.)
(5) 11:50-12:05 Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System ED2008-87 SDM2008-106 Jae-Woon Kim, Jinwook Burm (Sogang Univ.)
(6) 12:05-12:20 Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application ED2008-88 SDM2008-107 Jun-Gyu Lee, Bae-Ki Jung, Jinwook Burm (Sogang Univ.)
(7) 12:20-12:35 The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface ED2008-89 SDM2008-108 Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi (Tohoku Univ.)
  12:35-13:35 Lunch ( 60 min. )
Fri, Jul 11 PM  Session 8A: Si Devices IV
13:35 - 15:05
(1) 13:35-13:50 Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 ED2008-90 SDM2008-109 Hirotaka Kaku, Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
(2) 13:50-14:05 Study on Gate Around Transistor (GAT) Layout for Radiation Hardness ED2008-91 SDM2008-110 Min-su Lee, Young-Soo Lee, Chul-Bum Kim, Young-Ho Kim (KAIST), Byoung-Gon Yu, Hee Chul Lee (ETRI)
(3) 14:05-14:20 Low Power Pixel-Level ADC for a Micro-Bolometer ED2008-92 SDM2008-111 Dong-Heon Ha, Chi Ho Hwang (KAIST), Woo Seok Yang (ETRI), Yong Soo Lee, Hee Chul Lee (KAIST)
(4) 14:20-14:35 A 425 MHz Narrow Channel Spacing Frequency Synthesizer ED2008-93 SDM2008-112 Younwoong Chung, Junan Lee, Jinwook Burm (Sogang Univ)
(5) 14:35-14:50 A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltge Mixed-Mode Systems ED2008-94 SDM2008-113 Oh Jun Kwon, Kae DalKwack (Hanyang Univ.)
(6) 14:50-15:05 A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-OPamp Technique ED2008-95 SDM2008-114 Oh Jun Kwon, Kae Dal Kwack (Hanyang Univ.)
Fri, Jul 11 PM  Session 9A: High-Frequency, Photonic and Sensing Devices
15:05 - 16:05
(1) 15:05-15:20 24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization ED2008-96 SDM2008-115 Ickhyun Song, Hakchul Jung, Hee-Sauk Jhon, Minsuk Koo, Hyungcheol Shin (Seoul National Univ.)
(2) 15:20-15:35 Reduced Branch-Line Coupler Using Eight Two-Step Stubs for W-Band Application of MMIC ED2008-97 SDM2008-116 Tae-Jong Baek, Sang-Jin Lee, Min Han, Jin-Koo Rhee (Dongguk Univ.)
(3) 15:35-15:50 Design Consideration of High Power LED Arrays for Backlight Unit Applications ED2008-101 SDM2008-120 Bong-Ryeol Park, Ho-Young Cha (Hongik Univ.)
(4) 15:50-16:05 Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors ED2008-102 SDM2008-121 Akinori Mizohata, Naoki Yoshizawa, Taketomo Sato, Tamotsu Hashizume (Hokkaido Univ.)
Fri, Jul 11 PM  Session 8B: Compound Semiconductor Device Process Technology
13:35 - 15:50
(1) 13:35-13:50 W-band Single Balanced Mixer using High Performance Dot Schottky Diode ED2008-98 SDM2008-117 Sang-Jin Lee, Jung-Hun Oh, Tae-Jong Baek, Mun-Kyo Lee, Dong-Sic Ko, Du-Hyun Ko, Hyun-Chang Park, Jin-Koo Rhee (Dongguk Univ.)
(2) 13:50-14:05 SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application ED2008-99 SDM2008-118 Jae-Kwon Kim, Kyunghwan Kim, Jinwook Burn (Sogang Univ.)
(3) 14:05-14:20 Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes ED2008-100 SDM2008-119 M. R. Kim, S. D. Lee, J. S. Lee, N. S. Kwak, S. D. Kim, J. K. Rhee (Dongguk Univ.), W. J. Kim (ADD)
(4) 14:20-14:35 AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire ED2008-103 SDM2008-122 Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.)
(5) 14:35-14:50 Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures ED2008-104 SDM2008-123 Hironari Chikaoka, Youichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui)
(6) 14:50-15:05 AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD ED2008-105 SDM2008-124 Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry)
(7) 15:05-15:20 Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion ED2008-106 SDM2008-125 Takeshi Kimura, Tamotsu Hashizume (Hokkaido Univ.)
(8) 15:20-15:35 Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching ED2008-107 SDM2008-126 Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.)
(9) 15:35-15:50 Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition ED2008-108 SDM2008-127 Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.)

Announcement for Speakers
Keynote AddressEach speech will have 35 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
General TalkEach speech will have 10 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: er
Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E- geba 
()   
Contact Address  


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