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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yasuo Nara
Vice Chair Yuzou Oono (Univ. of Tsukuba)
Secretary Yoshitaka Sasago (Hitachi)
Assistant Rihito Kuroda (Tohoku Univ.)

Conference Date Thu, Nov 14, 2013 10:00 - 16:40
Fri, Nov 15, 2013 10:00 - 15:50
Topics Process, Device, Circuit Simulations, etc. 
Conference Place  
Transportation Guide http://www.jspmi.or.jp/kaigishitsu/
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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and
reproduction
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Thu, Nov 14 AM 
10:00 - 11:35
  10:00-10:05 Opening Address ( 5 min. )
(1) 10:05-10:50 [Invited Talk]
2013 SISPAD Review
-- transport and reliability --
SDM2013-99
Nobuya Mori (Osaka Univ.)
(2) 10:50-11:35 [Invited Talk]
2013 SISPAD Review
-- Workshop 1 --
SDM2013-100
Masashi Uematsu (Keio Univ.)
  11:35-13:00 Lunch ( 85 min. )
Thu, Nov 14 PM 
13:00 - 14:40
(3) 13:00-13:50 [Invited Talk]
Role of Computational Sciences in Design of Modern Electron Devices SDM2013-101
Kenji Shiraishi (Nagoya Univ.)
(4) 13:50-14:15 Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing SDM2013-102 Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba)
(5) 14:15-14:40 The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride SDM2013-103 Kenichiro Sonoda, Eiji Tsukuda, Motoaki Tanizawa, Kiyoshi Ishikawa, Yasuo Yamaguchi (Renesas Electronics)
  14:40-15:00 Break ( 20 min. )
Thu, Nov 14 PM 
15:00 - 16:40
(6) 15:00-15:50 [Invited Talk]
Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors SDM2013-104
Masumi Saitoh, Kensuke Ota, Chika Tanaka, Toshinori Numata (Toshiba)
(7) 15:50-16:40 [Invited Talk]
Advanced MOSFET simulations using a quantum energy trasport model SDM2013-105
Shohiro Sho, Shinji Odanaka (Osaka Univ.)
Fri, Nov 15 AM 
10:00 - 11:40
(8) 10:00-10:25 Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors SDM2013-106 Chika Tanaka, Daisuke Hagishima (Toshiba), Ken Uchida (Keio Univ.), Toshinori Numata (Toshiba)
(9) 10:25-10:50 Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect SDM2013-107 He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.)
(10) 10:50-11:15 Physical Model and Simulations on Resistive Transition of Pt/TiO2/Pt Capacitor SDM2013-108 Yasuhisa Omura, Yusuke Kondo (Kansai Univ.)
(11) 11:15-11:40 Theoretical Modeling of Double-Gate Lateral Tunnel FET SDM2013-109 Yasuhisa Omura, Daiki Sato, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. of Calcuitta)
  11:40-13:00 Lunch ( 80 min. )
Fri, Nov 15 PM 
13:00 - 14:15
(12) 13:00-13:25 NEGF Simulation for Studying Effect of Screening and Impurity Scattering in Junctionless Transistors SDM2013-110 Akiko Ueda (Univ. of Tsukuba), Mathieu Luisier (ETH Zurich), Katsuhisa Yoshida, Syuta Honda, Nobuyuki Sano (Univ. of Tsukuba)
(13) 13:25-13:50 Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach SDM2013-111 Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.)
(14) 13:50-14:15 Analysis of Thermoelectric Performance in Silicon Nanostructures Based on Monte Carlo Method SDM2013-112 Indra Nur Adisusilo, Kentaro Kukita (Osaka Univ.), Yoshinari Kamakura (Osaka Univ./JST CREST)
  14:15-14:35 Break ( 20 min. )
Fri, Nov 15 PM 
14:35 - 15:50
(15) 14:35-15:00 Possible Unified Model for the Hooge Parameter in Inversion-Layer-Channel MOSFET SDM2013-113 Yasuhisa Omura (Kansai Univ.)
(16) 15:00-15:25 Impacts of Channel Doping on Random Telegraph Signal Noise and Successful Noise Suppression by Mobility Enhancement SDM2013-114 Jiezhi Chen, Yusuke Higashi, Izumi Hirano, Yuichiro Mitani (Toshiba)
(17) 15:25-15:50 Reconsideration of Effective MOSFET Channel Length SDM2013-115 Kazuo Terada, Kazuhiko Sanai, Katsuhiro Tsuji (Hiroshima City Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Tatsuya Kunikiyo (Renesas)
TEL: 072-787-2408
FAX: 072-789-3438
E--mail: zns 


Last modified: 2013-09-17 12:44:12


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