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電子デバイス研究会(ED) [schedule] [select]
専門委員長 加地 徹 (豊田中研)
副委員長 原 直紀 (富士通研)
幹事 須原 理彦 (首都大東京), 上田 哲三 (パナソニック)
幹事補佐 葛西 誠也 (北大), 松永 高治 (NEC)

シリコン材料・デバイス研究会(SDM) [schedule] [select]
専門委員長 奈良 安雄 (富士通セミコンダクター)
副委員長 大野 裕三 (筑波大)
幹事 野村 晋太郎 (筑波大), 笹子 佳孝 (日立)

日時 2012年 6月27日(水) 08:40 - 19:00
2012年 6月28日(木) 08:30 - 12:00
2012年 6月29日(金) 08:15 - 12:40
議題 2012 先端半導体デバイスの基礎と応用に関するアジア太平洋ワークショップ 
会場名 沖縄県青年会館 
住所 〒900-0033 沖縄県那覇市久米2-15-23
交通案内 モノレール 旭橋駅下車 徒歩5分
http://www.okiseikan.or.jp/new/news.php
会場世話人
連絡先
琉球大学 野口 隆
098-864-1780
他の共催 ◆IEEK共催

6月27日(水) 午前  Opening Session
08:40 - 08:50
  08:40-08:50 Opening Address ( 10分 )
6月27日(水) 午前  Plenary Session
08:50 - 10:50
(1) 08:50-09:30 [基調講演]TCAD challenges and opportunities for predictive development Yongwoo Kwon・○Dae Sin KimYoung-Kwan ParkSamsung Electronics
(2) 09:30-10:10 [基調講演]More-than-Moore Devices based on Advanced CMOS Technologies Hitoshi WakabayashiSony
(3) 10:10-10:50 [基調講演]GaNパワーデバイスの最新技術 上田大助パナソニック
  11:00-11:10 Short Break ( 10分 )
6月27日(水) 午前  Si-based Power Device Technology
11:00 - 12:00
(4) 11:00-11:15 Electrical characteristics of IGBT using a field stop trench gate structure Ey Goo KangFar East Univ.)・Eun Sik JungMaplesemiconductor Incorporated)・Yong Tae KimKIST
(5) 11:15-11:30 Optimization and characterization of 600V super junction power MOSFET using a deep trench structure Yong Tae KimKIST)・Eun Sik JungMaplesemiconductor Inc.)・Ey Goo KangFar East Univ.
(6) 11:30-12:00 [招待講演]Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji HosoiTakashi KirinoYusuke UenishiDaisuke IkeguchiAtthawut ChanthaphanOsaka Univ.)・Akitaka YoshigoeYuden TeraokaJAEA)・Shuhei MitaniYuki NakanoTakashi NakamuraROHM)・Takayoshi ShimuraHeiji WatanabeOsaka Univ.
6月27日(水) 午前  Detectors and Sensors
11:00 - 12:15
(7) 11:00-11:30 [招待講演]III-nitride-based Visible-blind and Solar-blind Photodetectors Hai LuRong ZhangYoudou ZhengSchool of ESE, Nanjing Univ.
(8) 11:30-11:45 The Very Fast Transferred Pixel with a Multi-Pinchoff Photodiode for Wafer-Scale X-Ray Sensor Joonghyeok ByeonJongmin KimWon-Young JungDongbu Hitek)・Ji-Hoon LimJae-Kyung WeeSoongsil Univ.
(9) 11:45-12:15 [招待講演]Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors Kyung Rok KimMin Woo RyuSunhae ShinHee Cheol HwangKibog ParkUNIST
  12:15-13:15 Lunch Break ( 60分 )
6月27日(水) 午後  MOSFETs and Memory Technology
13:15 - 15:00
(10) 13:15-13:30 Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors Sang Wan KimSeoul National Univ.)・Woo Young ChoiSogang Univ.)・Min-Chul SunHyun Woo KimByung-Gook ParkSeoul National Univ.
(11) 13:30-13:45 The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar Takuya ImamotoTetsuo EndohTohoku Univ.
(12) 13:45-14:00 A High Performance SRAM Sense Amplifier with Vertical MOSFET Hyoungjun NaTetsuo EndohTohoku Univ.
(13) 14:00-14:15 Effects of Random Dopant Fluctuations on NAND Flash Memory Cells Jungeun Kang・○Boram HanSogang Univ.)・Kyoung-Rok HanChung sung JaeGyu-Seog ChoSung-Kye ParkSeok-Kiu LeeSK Hynix)・Woo Young ChoiSogang Univ.
(14) 14:15-14:30 Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field Do-Bin KimYoon KimSe Hwan ParkWandong KimJoo Yun SeoSeung-Hyun KimByung-Gook ParkSeoul National Univ.
(15) 14:30-14:45 A Novel CMOS-Based PNP BJT Structure for Analog Applications Seon-Man HwangYi-Jung JungHyuk-Min KwonJae-Hyung JangHo-Young KwakSung-Kyu KwonChungnam National Univ.)・Yi-Sun ChungDa-Soon LeeJong-Kon LeeMagnachip Semiconductor Inc.)・Hi-Deok LeeChungnam National Univ.
(16) 14:45-15:00 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits Hidetoshi UtsumiRyohei KasaharaYukihisa NakaoRihito KurodaAkinobu TeramotoShigetoshi SugawaTadahiro OhmiTohoku Univ.
  15:00-15:15 Break ( 15分 )
6月27日(水) 午後  TFT Technology I
15:15 - 16:45
(17) 15:15-15:30 Field-induced degradation of organic field effect transistors under vacuum condition Hoonsang Yoon・○Youngjin KangJongsun ChoiHyungtak KimHongik Univ.
(18) 15:30-15:45 Nonvolatile Memory Thin-Film Transistors Using Solution-Processed Oxide Semiconducting Channel and Ferroelectric Polymer Gate Insulator Jun-Yong BakKyung Hee Univ.)・Soon-Won JungHo-Jun RyuSang-Hee Ko ParkChi-Sun HwangETRI)・○Sung-Min YoonKyung Hee Univ.
(19) 15:45-16:00 Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors Jungil YangDonghee LeeDongkyu ChoSanghyun WooYoosung LimSungmin ParkDaekuk KimMoonsuk YiPNU.
(20) 16:00-16:15 A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer Yi-Hsiang ChiuShan-Jen YangFeng-Tso ChienFeng Chia Univ.)・Chii-Wen ChenMinghsin Univ.
(21) 16:15-16:30 The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field Meng-Shan ChiTzung-Ju LinFeng-Tso ChienFeng Chia Univ.)・Chii-Wen ChenMinghsin Univ.
(22) 16:30-16:45 Influence of grain size deviation on device characteristics of TFTs and displays for OLED driving Katsuya ShiraiTakashi NoguchiUniv. of the Ryukyus
  16:45-17:15 Break ( 30分 )
6月27日(水) 午後  TFT Technology II
17:15 - 18:45
(23) 17:15-17:30 Crystallization of a-Si Films with Smooth Surface Using Blue-Multi-Laser-Diode-Annealing Tatsuya OkadaJean de Dieu MugiranezaKatsuya ShiraiTakuma NishinoharaTomoyuki MukaeKeisuke YagiTakashi NoguchiUniv. Ryukyus
(24) 17:30-17:45 Characterization of Optimized Sputtered Poly-Si Films by Blue-Multi-Laser-Diode Annealing for High Performance Displays Takuma NishinoharaJ. D. MugiranezaKatsuya ShiraiTatsuya OkadaTakashi NoguchiUniv. of the Ryukyus
(25) 17:45-18:00 Effective Annealing of Si Films as an advanced LTPS Takashi NoguchiTakuma NishinoharaJean de Dieu MugiranezaKatsuya ShiraiTatsuya OkadaUniv. Ryukyus
(26) 18:00-18:15 Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor Shunki KoyanagiShohei HayashiTsubasa MizunoKouhei SakaikeHiroaki HanafusaSeiichiro HigashiHiroshima Univ.
(27) 18:15-18:30 Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth Yuki TojoRyo MatsumuraHiroyuki YokoyamaMasashi KurosawaKaoru TokoTaizoh SadohMasanobu MiyaoKyushu Univ.
(28) 18:30-18:45 Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique Jonghyeok ParkTsuneharu SuzukiMasanobu MiyaoTaizoh SadohKyushu Univ.
6月27日(水) 午後  Interconnects and Integration Technologies
13:15 - 15:00
(29) 13:15-13:30 Loss characteristic of Comb-type Capacitive Transmission Line on MMIC Eui-Hoon JangJang-Hyeon JeongSung-Jo HanKi-Jun SonYoung YunKorea Maritime Univ.
(30) 13:30-13:45 Loss characteristic of Coplanar Waveguide Employing Periodic Structure on RFIC Jang-Hyeon JeongEui-Hoon JangSung-Jo HanKi-Jun SonYoung YunKorea Maritime Univ.
(31) 13:45-14:00 A Simple Dual-Loop Optoelectronic Oscillator with Reduced Spurious Tones Using a Multi-Electrode Semiconductor Laser Jun-Hyung ChoSeo-Weon HeoHyuk-Kee SungHongik Univ.
(32) 14:00-14:15 A chip scale wafer level packaging for LED using surface aligning technique. Jin Kwan KimHee Chul LeeKAIST
(33) 14:15-14:30 Stress Measurement Errors induced by the Strain Effects in Resistor-based Stress Sensors on (111) silicon Chun-Hyung ChoHo-Young ChaHongik Univ.
(34) 14:30-14:45 Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases Yeong Hyeon HwangKIST)・Won-Ju ChoKwangwoon Univ.)・Yong Tae KimKIST
(35) 14:45-15:00 Fabrication of β-FeSi2 thin films on Si using solid-phase growth reaction from Fe and FeSi sources Katsuaki MomiyamaKensaku KanomataTakahiko SuzukiShigeru KubotaFumihiko HiroseYamagata Univ.
  15:00-15:15 Break ( 15分 )
6月27日(水) 午後  Circuit Technology I
15:15 - 17:00
(36) 15:15-15:45 [招待講演]CIS in high-end mobile camera Kangbong SeoKyoungin LeeSiwook YooSangdong YooKyoungdong YooSK Hynix
(37) 15:45-16:15 [招待講演]Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits Seiya KasaiHokkaido Univ.)・Shaharin Fadzli Abd RahmanUTM/Hokkaido Univ.)・Masaki SatoXiang YinHokkaido Univ.)・Toshihiko MaemotoOsaka Inst. Tech.
(38) 16:15-16:30 A 140-GHz Fully Differential Common-Source Amplifier in 65nm CMOS Hyunchul KimDaekeun YoonJae-Sung RiehKorea Univ.
(39) 16:30-16:45 An Area-Efficient CMOS Delay-Locked Loop Sungkeun LeeSe-Weon HeoJongsun KimHongik Univ.
(40) 16:45-17:00 A Wide Range and High Resolution CMOS DCC Sangwoo HanJongsun KimHongik Univ.
  17:00-17:15 Break ( 15分 )
6月27日(水) 午後  Circuit Technology II
17:15 - 19:00
(41) 17:15-17:30 A 0.5-V 2.4-GHz CMOS Voltage-Controlled Oscillator for Wireless Sensor Network Application Seunghyeon KimHyunchol ShinKwangwoon Univ.
(42) 17:30-17:45 A 2.4-GHz CMOS Single-Chip OOK Transceiver for Wireless Sensor Network Applications Seunghyeon KimHyun KimHyunchol ShinKwangwoon Univ.
(43) 17:45-18:00 The Robust Cgd/Cgs Measurement Method of 85V nLDMOS Won-Young JungJin-Soo KimTaek-Soo KimDongbu Hitek
(44) 18:00-18:15 Design of Small-Area and High-Reliability 512-Bit EEPROM IP and its Measurement Liyan JinGeon-Soo YonnDong-Hoon LeeJi-Hye JangMu-Hun ParkPan-Bong HaYoung-Hee KimChangwon National Univ.
(45) 18:15-18:30 Design of a Differential Paired eFuse One-Time Programmable Memory IP and its Measurement Huiling YangMin-Sung KimJi-Hye JangMu-hun ParkPan-Bong HaYoung-Hee KimChangwon National Univ.
(46) 18:30-18:45 A Design of 5 - 6 GHz Band Rat-Race Hybrid Ring Coupler with Improved Phase-Error for Microstrip Structure Kyunghoon KimDohyung KimJunghyun ShinJinwook BurmSogang Univ.
(47) 18:45-19:00 A Power-Efficient 4-PAM Serial Link Receiver using a fully differential Rail-to-Rail input Dynamic Latch for Wide Dynamic Range Junan LeeDaeho YunBongsub SongJinwook BurmSognag Univ.
6月28日(木) 午前  Memory Technology
08:30 - 10:40
(48) 08:30-08:45 Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory Min Su HanYeong Hwan KimKyung Soo KimJae Min LeeYoungcheol OhWoo Young ChoiMyongji Univ.)・Woo Young ChoiSogang Univ.)・Il Hwan ChoMyongji Univ.
(49) 08:45-09:00 Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio OhtaHiroshima Univ.)・Katsunori MakiharaNagoya Univ.)・Mitsuhisa IkedaHideki MurakamiSeiichiro HigashiHiroshima Univ.)・Seiichi MiyazakiNagoya Univ.
(50) 09:00-09:15 Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System Motoki FukusimaNagoya Univ.)・Akio OhtaHiroshima Univ.)・Katsunori MakiharaSeiichi MiyazakiNagoya Univ.
(51) 09:15-09:30 Nonvolatile Polymer Memory-cell embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene Jong-Dae LeeHyunMin SeungChang-Hwan KimJea-Gun ParkHanyang Uni.
(52) 09:30-09:45 Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy Daichi TakeuchiKatsunori MakiharaNagoya Univ.)・Mitsuhisa IkedaHiroshima Univ.)・Seiichi MiyazakiNagoya Univ.)・Hirokazu KakiTsukasa HayashiNISSIN ELECTRIC Co. Ltd.,
(53) 09:45-10:00 Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Mitsuhisa IkedaHiroshima Univ.)・Katsunori MakiharaSeiichi MiyazakiNagoya Univ.
  10:00-10:40 Break ( 40分 )
6月28日(木) 午前  Energy Harvesting
08:30 - 09:45
(54) 08:30-09:00 [招待講演]Voltage Multiplier Circuits and Radio Wave Generation Module for Energy Harvesting System Saejeong ChoiChangsun KimHyunshin LeeInyoung KimDongchul ParkMJU)・Sooyoung MinYunsik LeeKETI)・○Taikyeong JeongMJU
(55) 09:00-09:30 [招待講演]Exploitation of Hierarchical Nanomaterials for Improving Light-Harvesting and Charge Collecting Properties of Dye-sensitized Solar Cells Hyun Suk JungSKKU
(56) 09:30-09:45 Lead Zirconate Titanate Acoustic Energy Harvesters for use in high sound pressure environments Tomohiro MatsudaSaori HagiwaraShuntaro MiyakeKazuki TomiiSatoshi IizumiShungo TomiokaShu KimuraKyohei TsujimotoYusuke UchidaYasushiro NishiokaNihon Univ.
6月28日(木) 午前  Gate Stack Technology
09:45 - 10:30
(57) 09:45-10:00 Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer Kuniaki HashimotoAkio OhtaHideki MurakamiSeiichiro HigashiHiroshima Univ.)・Seiichi MiyazakiNagoya Univ.
(58) 10:00-10:15 Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures KusumandariWakana TakeuchiKimihiko KatoShigehisa ShibayamaMitsuo SakashitaNoriyuki TaokaOsamu NakatsukaShigeaki ZaimaNagoya Univ.
(59) 10:15-10:30 Effect of Si surface roughness on EOT reduction for HfON gate insulator formed by ECR plasma oxidation of HfN Dae-Hee HanShun-ichiro OhmiTokyo Tech
  10:30-10:40 Short Break ( 10分 )
  10:40-12:00 Poster session ( 80分 )
  12:00-13:00 Lunch Break ( 60分 )
  13:00-18:00 Excursion ( 300分 )
  18:00-20:00 Banquet ( 120分 )
6月29日(金) 午前  Advanced Si Technology
08:15 - 10:30
(60) 08:15-08:45 [招待講演]The Stability of Bandgap Reference Voltage with Device Structures Sang-Gi LeeJun-Woo SongEun-Sang JoKwang-Dong YooDongbu HiTek
(61) 08:45-09:15 [招待講演]Potential of GeSn Alloys for Application to Si Nanoelectronics Shigeaki ZaimaYosuke ShimuraMarika NakamuraWakana TakeuchiMitsuo SakashitaOsamu NakatsukaNagoya Univ.
(62) 09:15-09:45 [招待講演]III-V/Ge integration on Si platform for electronic-photonic integrated circuits Mitsuru TakenakaShinichi TakagiUniv. Tokyo
(63) 09:45-10:15 [招待講演]超低電力応用に向けた薄膜BOX-SOI (SOTB) CMOS技術 杉井信之岩松俊明山本芳樹槇山秀樹角村貴昭篠原博文青野英樹尾田秀一蒲原史朗山口泰男超低電圧デバイス技研組合/ルネサス エレクトロニクス)・水谷朋子平本俊郎東大
(64) 10:15-10:30 Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul SunSNU and SEC)・○Sang Wan KimGaram KimHyun Woo KimHyungjin KimJong-Ho LeeHyungcheol ShinByung-Gook ParkSNU
  10:30-10:45 Break ( 15分 )
6月29日(金) 午前  MOSFET Reliability
10:45 - 12:30
(65) 10:45-11:15 [招待講演]Decomposition analysis of on-current variability of FinFETs Takashi MatsukawaYongxun LiuKazuhiko EndoShinichi O'uchiMeishoku MasaharaAIST
(66) 11:15-11:45 [招待講演]Thermal-Aware Device Desing of Nanoscale MOS Transistors Ken UchidaKeio Univ.)・Tsunaki TakahashiNobuyasu BeppuTokyo Tech
(67) 11:45-12:00 Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs Tomoko MizutaniAnil KumarToshiro HiramotoUniv. of Tokyo
(68) 12:00-12:15 Reliability Measurement of PFETs under Post Fabrication Self-Improvement Scheme for SRAM Nurul Ezaila AliasAnil KumarTakuya SarayaUniv. of Tokyo)・Shinji MiyanoSTARC)・Toshiro HiramotoUniv. of Tokyo
(69) 12:15-12:30 The Effects of Fluorine Implantation on 1/f noise and reliability characteristics of NMOSFET Jae-Hyung JangHyuk-Min KwonHo-Young KwakSung-Kyu KwonSeon-Man HwangJong-Kwan ShinChungnam National Univ.)・Seung-Yong SungYi-Sun ChungDa-Soon LeeJong-Kon LeeMagnachip Semiconductor Inc)・Hi-Deok LeeChungnam National Univ.
6月29日(金) 午前  Widegap and III-V Semiconductor Devices
08:15 - 10:30
(70) 08:15-08:45 [招待講演]Integrated Design Platform for Power Electronics Applications with GaN Devices Kenji MizutaniHiroaki UenoYuji KudohShuichi NagaiKaoru InoueNobuyuki OtsukaTetsuzo UedaTsuyoshi TanakaDaisuke UedaPanasonic
(71) 08:45-09:15 [招待講演]Current Status of GaN Technologies in ETRI Jae Kyoung MunJong-Won LimSang Choon KoSeong-il KimEun Soo NamETRI
(72) 09:15-09:45 [招待講演]New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes Masataka HigashiwakiNICT/JST)・Kohei SasakiTamura Corp./NICT)・Akito KuramataTamura Corp.)・Takekazu MasuiKoha Co., Ltd.)・Shigenobu YamakoshiTamura Corp.
(73) 09:45-10:15 [招待講演]InAs Quantum-Well MOSFET (Lg = 100 nm) for Logic and Microwave Applications Tae-Woo KimRichard HillSEMATECH)・Dae-Hyun KimTeledyne)・Jesus A. del AlamoMIT)・Chad D. YoungDmitry VekslerChang Yong KangSEMATECH)・Jungwoo OhYonsei Univ.)・Chris HobbsPaul D. KirschRaj JammySEMATECH
(74) 10:15-10:30 Vertical InGaAs MOSFET with HfO2 gate Jun HiraiTomoki KususakiShunsuke Ikeda・○Yasuyuki MiyamotoTokyo Tech
  10:30-10:45 Break ( 15分 )
6月29日(金) 午前  Widegap and Nanowire Devices
10:45 - 12:15
(75) 10:45-11:00 ICPCVD SiO2 for AlGaN/GaN MISHFET application Bong-Ryeol ParkJae-Gil LeeHyungtak KimChun-Hyung ChoHo-Young ChaHongik Univ.
(76) 11:00-11:15 Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs Kota OhiTamotsu HashizumeHokkaido Univ.
(77) 11:15-11:30 Fabrication and Characterization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet Takayuki TanakaYuki NakanoToru MuramatsuSeiya KasaiHokkaido Univ.
(78) 11:30-12:00 [招待講演]Carbon nanotube-based plastic electronics Yutaka OhnoNagoya Univ., Aalto Univ.)・Dong-ming SunKentaro HiguchiNagoya Univ.)・Marina Y. TimmermansAntti KaskelaAlbert G. NasibulinAalto Univ.)・Shigeru KishimotoNagoya Univ.)・Esko I. KauppinenAalto Univ.)・Takashi MizutaniNagoya Univ.
(79) 12:00-12:15 Solution-based high-frequency field-effect transistors with purified semiconductor carbon nanotubes Masaki InagakiKensuke HataKazunari ShiozawaYasumitsu MiyataYutaka OhnoShigeru KishimotoHisanori ShinoharaTakashi MizutaniNagoya Univ.
  12:15-12:30 Break ( 15分 )
6月29日(金) 午後  Closing session
12:30 - 12:40
  12:30-12:40 Closing Remarks ( 10分 )
6月28日(木) 午前  Poster Session
10:40 - 12:00
(80) 10:40-12:00 [ポスター講演]Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances. Jae Hwa SeoJae Sung LeeYun Soo ParkJung-Hee LeeIn Man KangKyunpook Nat'l Univ.
(81) 10:40-12:00 [ポスター講演]Dependence of Schottky barrier height on the junction size of bcc-metal/n-Ge(111) contacts Hirotaka YoshiokaKenji KasaharaToshihiro NishimuraShinya YamadaMasanobu MiyaoKohei HamayaKyushu Univ.
(82) 10:40-12:00 [ポスター講演]Effect of hydrofluoric acid treatment on InAlN surfaces Takuma NakanoMasamichi AkazawaHokkaido Univ.
(83) 10:40-10:55 [ポスター講演]The surface morphology and electrical properties of NiO with various RF power and O2/(Ar+O2) gas mixture Jonghun KimGyohun KooChangju LeeSungho HahmKyungpook National Univ.)・Youngchul JungGyeongju Univ.)・Yougsoo LeeKyungpook National Univ.
(84) 10:40-12:00 [ポスター講演]Mold transfer processed organic light emitting diodes using patterned conductive polymer electrode Hyun Jun LeeYoung Wook ParkTae Hyun ParkEun Ho SongKorea Univ.)・Se Joong ShinKorea univ.)・Hakkoo KimKyung bok ChoiJu Hyun HwangKorea Univ.)・Jinwoo LeeMicobiomed. Ltd)・Jinnil ChoiHanbat National Univ.)・Byeong-Kwon JuKorea Univ.
(85) 10:40-12:00 [ポスター講演]Development of scanning nano-SQUIDs for local magnetic imaging. Yusuke ShibataTsukuba Univ.)・Ryosuke IshiguroTokyo Univ. of Science)・Hiromi KashiwayaSatoshi KashiwayaAIST)・Hideaki TakayanagiTokyo Univ. of Science/NIMS)・Shintaro NomuraTsukuba Univ.
(86) 10:40-12:00 [ポスター講演]Degradation Characteristics of high voltage AlGaN/GaN-on-Si Heterostructure FETs Shinhyuk Choi・○Hoonsang YoonDongmin KeumJae-Gil LeeHo-Young ChaHyungtak KimHongik Univ.

講演時間
基調講演発表 30 分 + 質疑応答 10 分
招待講演発表 20 分 + 質疑応答 10 分
一般講演発表 10 分 + 質疑応答 5 分
ポスター講演発表 80 分

問合先と今後の予定
ED 電子デバイス研究会(ED)   [今後の予定はこちら]
問合先 原 直紀 (富士通研究所)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
津田 邦男(東芝)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba
須原 理彦(首都大)
TEL : 042-677-2765 Fax : 042-677-2756
E- : t
上田 哲三(パナソニック)
TEL:075-956-8273、FAX:075-956-9110
E-zopac 
SDM シリコン材料・デバイス研究会(SDM)   [今後の予定はこちら]
問合先 小野 行徳(NTT)
〒930-8555
富山市五福3190
富山大学大学院理工学研究部
ナノ・新機能材料学域 ナノマテリアル・システムデザイン学系
(電気電子システム工学科担当)
大学院棟7204
電話(Fax) 076-445-6883
e: oengu- 


Last modified: 2012-06-13 10:28:02


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