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Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Shigehisa Arai
Vice Chair Yuichi Tomori
Secretary Noriyuki Yokouchi, ryoko Yoshimura

Conference Date Fri, Dec 3, 2004 10:05 - 16:55
Topics Semiconductor Lasers and Related Technologies 
Conference Place Kikai-Shinko-Kaikan Bldg., Room 6-65 
Address 3-5-8 Shibakoen, Minato-ku, Tokyo, 105-0011
Transportation Guide http://www.jspmi.or.jp/kaikan.htm
Sponsors This meeting is cosponsored by The Laser Society of Japan

Fri, Dec 3 AM 
10:00 - 12:10
  10:00-10:05 Opening Address ( 5 min. )
(1) 10:05-10:30 Surface plasmon enhancement on the probing characteristics of metal nano-aperture VCSEL Jiro Hashizume, Fumio Koyama (Tokyo Tech.)
(2) 10:30-10:55 Experimental demonstration and rate equation analysis of semiconductor quasiperiodic photonic crystal laser Kengo Nozaki, Toshihiko Baba (Yokohama Nat'l Univ.)
(3) 10:55-11:20 Room Temperature Lasing Characteristics in InAs Quantum-Dot Microdisk Toshihide Ide, Toshihiko Baba (Yokohama Nat'l Univ.), Jun Tatebayashi, Satoshi Iwamoto, Toshihiro Nakaoka, Yasuhiko Arakawa (Univ. of Tokyo)
(4) 11:20-11:45 Research on Sb-based quantum dot vertical-cavity surface-emitting lasers for optical communication systems Naokatsu Yamamoto, Kouichi Akahane, Shin-ichirou Gozu, Akio Ueta, Naoki Ohtani (NICT)
(5) 11:45-12:10 Low-threshold operation of 1.34-μm vertical-cavity surface-emitting lasers with GaInNAs quantum wells Mitsuki Yamada, Takayoshi Anan, Hiroshi Hatakeyama, Keiichi Tokutome, Naofumi Suzuki, Takahiro Nakamura, Kenichi Nishi (NEC)
  12:10-13:20 Lunch Break ( 70 min. )
Fri, Dec 3 PM 
13:20 - 16:55
(6) 13:20-13:50 [Invited Talk]
*
Yuzo Yoshikuni (NTT)
(7) 13:50-14:30 [Invited Talk]
High power single-mode VCSELs with traiangular air holes
Akio Furukawa, Satoshi Sasaki, Mitsunari Hoshi, Atsushi Matsuzono (Sony Corp.), Kousuke Moritoh, Toshihiko Baba (Yokohama Nat'l Univ.)
(8) 14:30-14:55 Reduction of spectral-linewidth in SOA integrated wavelength selectable laser Tatsuya Kimoto, Tatsuro Kurobe, Kengo Muranushi, Toshikazu Mukaihara (Furukawa Electric)
  14:55-15:15 Break ( 20 min. )
(9) 15:15-15:40 1.3 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by MOCVD Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Hiroji Ebe (Univ. of Tokyo), Hisao Sudou, Akito Kuramata (Fujitsu Lab.), Mitsuru Sugawara, Yasuhiko Arakawa (Univ. of Tokyo)
(10) 15:40-16:05 Mid-infrared InAs/AlGaSb quantum cascade lasers Keita Ohtani (Tohoku Univ), Hideo Ohno (Tohoku univ)
(11) 16:05-16:30 Dual Wavelength High Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly Technique Tomaoaki Tojo, Kazuhiko Yamanaka, Kazutoshi Onozawa, Brahm Pal Singh, Daisuke Ueda (MEI), Ikuo Soga, Koich Maezawa, Takashi Mizutani (Nagoya Univ.)
(12) 16:30-16:55 Sudden failure analysis of InGaAs/GaAs strained-layer quantum-well lasers Tatsuya Takeshita, Mitsuru Sugo, Toru Sasaki, Yuichi Tohmori (NTT)
  16:55-17:00 Closing Address ( 5 min. )

Contact Address and Latest Schedule Information
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Noriyuki Yokouchi (Furukawa Electric)
TEL +81-45-311-1219, FAX 045-314-5190
E-: nn
Ryoko Yoshimura (NTT)
TEL +81-46-240-3101, FAX. 046-270-2331
E-: ryaecl 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/


Last modified: 2004-09-18 12:08:54


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