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Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Yuichi Nakamura (Toyohashi Univ. of Tech.)
Vice Chair Hideki Nakazawa (Hirosaki Univ.)
Secretary Tomoaki Terasako (Ehime Univ.), Mayumi Takeyama (Kitami Inst. of Tech)
Assistant Yasuo Kimura (Tokyo Univ. of Tech.), Fumihiko Hirose (Yamagata Univ.), Noriko Bamba (Shinshu Univ.)

Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Hiroki Fujishiro (Tokyo Univ. of Science)
Vice Chair Seiya Sakai (Hokkaido Univ.)
Secretary Junji Kotani (Fjitsu Lab.), Takuya Tsutsumi (NTT)
Assistant Ryota Isonoi (SCIOCS), Yoshitugu Yamamoto (Mitsubishi Electric)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Hiroshige Hirano (TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi (Tokyo Inst. of Tech.)
Secretary Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
Assistant Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.)

Conference Date Fri, May 27, 2022 13:00 - 17:55
Topics Functional Device Materials, Fabrication, Characterization, and Related Technology 
Conference Place  
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM, ED, CPM.

Fri, May 27 PM 
13:00 - 15:30
(1) 13:00-13:50 [Invited Talk]
Imprementation and Analysis of Energy Harvesting Device Utilizing Radiative Heating and Cooling ED2022-7 CPM2022-1 SDM2022-14
Yoshinari Kamakura, Kyoya Minato, Yuma Fujita, Yuhei Suzuki (OIT)
(2) 13:50-14:15 Development of ZnO/Conductive-Fabrics for Flexible Thermoelectric Devices ED2022-8 CPM2022-2 SDM2022-15 Nobuhiro Kawase, Naoki Fujiwara, Masaru Shimomura (Shizuoka Univ.), Toshitaka Yamakawa (Kumamoto Univ.), Kazushi Ikeda (NAIST), Yasuhiro Hayakawa, Hiroya Ikeda (Shizuoka Univ.)
(3) 14:15-14:40 Formation of Periodical Unique Structure by Free Electron Laser Irradiation ED2022-9 CPM2022-3 SDM2022-16 Masayoshi Nohira, Youta Hoshino, Nobuyuki Iwata (Nihon Univ.)
(4) 14:40-15:05 Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications ED2022-10 CPM2022-4 SDM2022-17 Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.)
(5) 15:05-15:30 Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors ED2022-11 CPM2022-5 SDM2022-18 Taruna Teja Jupalli, Tsutomu Kaneko, Chitra Pandy, Daniel Moraru (Shizuoka Univ.)
  15:30-15:50 Break ( 20 min. )
Fri, May 27 PM 
15:50 - 17:55
(6) 15:50-16:15 Study on semiconductor-based nonlinear dynamic node for physical reservoir computing system ED2022-12 CPM2022-6 SDM2022-19 Seiya Kasai, Shunsuke Saito (Hokkaido Univ.)
(7) 16:15-16:40 Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials ED2022-13 CPM2022-7 SDM2022-20 Taketomo Sato, Masachika Toguchi (Hokkaido Univ.)
(8) 16:40-17:05 Crystal Growth of YbFe2O4 Thin Films on Al2O3(0001) and YSZ(111) Substrates ED2022-14 CPM2022-8 SDM2022-21 Kenshin Kurumai, Takehiro Teraji, Reo Tamura, Nobuyuki Iwata (Nihon Univ)
(9) 17:05-17:30 Characterization method of semiconductors under Ohmic-metals by using multi-probe Hall devices ED2022-15 CPM2022-9 SDM2022-22 Kazuya Uryu (JAIST/ATL), Shota Kiuchi (JAIST), Taku Sato (ATL), Toshi-kazu Suzuki (JAIST)
(10) 17:30-17:55 Study on TiAl-based ohmic electrodes on AlGaN/GaN heterostructures ED2022-16 CPM2022-10 SDM2022-23 Mao Fukinaka, Yoshiki Akira, Hiroshi Okada (TUT)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 45 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address  
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Junji Kotani (Fujitsu)
TEL : 046-250-8243
E- :jun-01
Takuya Tsutsumi (NTT)
TEL: 046-240-3180
E-:  
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address SDM Secretary: MORI Takahiro(National Institute of AIST)
Tel +81-29-849-1149
E-Mail -aist 


Last modified: 2022-04-18 15:52:07


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