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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)

Conference Date Thu, Feb 8, 2018 10:00 - 16:50
Topics  
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

  10:00-10:05 Opening Address ( 5 min. )
(1) 10:05-10:45 [Invited Talk]
Cluster-Preforming-Deposited Amorphous WSin (n = 12) Insertion Film of Low SBH and High Diffusion Barrier for Direct Cu Contact SDM2017-97
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Kazuhiko Endo, Toshihiko Kanayama (AIST)
(2) 10:45-11:25 [Invited Talk]
Characteristics of Cobalt alloy for low resistivity contact in sub 10 nm FinFET
Junichi Koike, Maryamsadat Hosseini, Daisuke Ando, Yuji Sutou (Tohoku Univ.)
(3) 11:25-12:05 [Invited Talk]
Moisture Barrier Properties of Capping Graphene for Copper Metallization SDM2017-98
Kazuyoshi Ueno, Ploybussara Gomasang, Takumi Abe (SIT), Kenji Kawahara (Kyushu Univ.), Yoko Wasai (Horiba Techno), Nguyen Thanh Cuong (NIMS), Nataliya Nabatova-Gabain (Horiba Techno), Hiroki Ago (Kyushu Univ.), Susumu Okada (Univ. Tsukuba)
  12:05-13:10 Lunch Break ( 65 min. )
(4) 13:10-13:50 [Invited Talk]
A Novel Role for SiCN to Suppress H2O Outgas from TEOS oxide films in wafer bonding SDM2017-99
Michinari Tetani, Yasunori Morinaga, Masakazu Hamada, Masahiko Takeuchi, Shinji Uya, Hisashi Yano, Naoaki Sato, Susumu Matsumoto (TPSCo)
(5) 13:50-14:30 [Invited Talk]
In-situ Analysis of Corrosion inhibitor behavior of Co surface SDM2017-100
Toshiaki Shibta, Tomohiro Kusano, Ken Harada, Kan Takeshita, Yasuhiro Kawase (Mitsubishi Chemical Corp.)
(6) 14:30-15:10 [Invited Talk]
Low cost solder-TSV technology for automobile application SDM2017-101
Atsushi Mizutani, Yuki Ohara, Yuki Inagaki, Kazushi Asami (DENSO)
  15:10-15:30 Break ( 20 min. )
(7) 15:30-16:10 [Invited Talk]
Low temperature Cu-Cu bonding by transient liquid phase sintering of mixed Cu nanoparticles and Sn-Bi eutectic powders SDM2017-102
Muhammad Khairi Faiz, Takehiro Yamamoto (Waseda Univ.), Tadatomo Suga (Tokyo Univ.), Tomoyuki Miyashita, Makoto Yoshida (Waseda Univ.)
(8) 16:10-16:50 [Invited Talk]
Next Generation Circuit Fabrication by Molecular Bonding Technology SDM2017-103
Akihiko Happoya (Toshiba), Kunio Mori (SCL)
  16:50-16:55 Closing Address ( 5 min. )

Announcement for Speakers
Invited TalkEach speech will have 30 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 


Last modified: 2018-01-19 15:04:08


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