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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yasuo Nara (Fujitsu Semiconductor)
Vice Chair Yuzou Oono (Univ. of Tsukuba)
Secretary Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

Conference Date Fri, Dec 7, 2012 10:00 - 17:00
Topics Fabrication and Characterization of Si-related Materials and Devices 
Conference Place A1-001, Katsura Campus, Kyoto University 
Address Katsura, Nishikyo, Kyoto 615-8510, Japan
Transportation Guide
Prof. Tsunenobu Kimoto
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Fri, Dec 7  
10:00 - 17:00
(1) 10:00-10:15 Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance SDM2012-115 Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(2) 10:15-10:30 Plasmaless etching of silicon carbide using chlorine based gas SDM2012-116 Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST)
(3) 10:30-10:45 Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation SDM2012-117 Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA)
(4) 10:45-11:00 Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) SDM2012-118 Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
(5) 11:00-11:15 Surface Modification of Glass Substrate by Ion Beam Irradiation of Ionic Liquid BMIM-PF6 SDM2012-119 Mitsuaki Takeuchi, Takuya Hamaguchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)
(6) 11:15-11:30 Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams SDM2012-120 Kosuke Imanaka, Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)
(7) 11:30-11:45 Study of carrier behavior in memory transistor using DNA SDM2012-121 Shoko Maeno, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ. of Hyogo)
(8) 11:45-12:00 Delivery process of gold nanoparticles using protein and its plasmon characteristics SDM2012-122 Satoshi Saijo, Yasuaki Ishikawa, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
  12:00-13:00 Lunch Break ( 60 min. )
(9) 13:00-13:15 Neural Network using Thin-Film Transistors
-- Working Confirmation of Asymmetric Circuit --
Mutsumi Kimura, Yuki Yamaguchi, Ryohei Morita, Yusuke Fujita, Tomoaki Miyatani, Tomohiro Kasakawa (Ryukoku Univ.)
(10) 13:15-13:30 Retinal Prosthesis of Frequency Modulation using Thin Film Photo Transistors SDM2012-124 Takayuki Kadonome, Atsushi Matsumura, Tsuyoshi Higashiyama, Shohei Oyama, Mutsumi Kimura (Ryukoku Univ.)
(11) 13:30-13:45 Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation SDM2012-125 Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(12) 13:45-14:00 Design for inexpensive Detector (Silicon Drift Detector) SDM2012-126 Ryota Okada, Kazuki Matsutani, Hideharu Matsuura (Osaka Electro-Communication Univ.)
(13) 14:00-14:15 Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching SDM2012-127 Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters)
(14) 14:15-14:30 Photovoltaic characteristics of depth controled the emitter layer and selective emitter layer formed by laser doping SDM2012-128 Shigeaki Tanaka, Hideki Nishimura, Takashi Fuyuki (NAIST)
(15) 14:30-14:45 Improvement of the electronic states by controlling the interface between dopant and substrate in laser doping for textured silicon SDM2012-129 Hideki Nishimura, Shigeaki Tanaka, Shota Morisaki, Shingo Yumoto, Takashi Fuyuki (NAIST)
(16) 14:45-15:00 Fabrication of N-type Silicon Solar Cells by Laser Doping Method for High Efficiency SDM2012-130 Shota Morisaki, Hideki Nishimura, Emi Sugimura, Takashi Fuyuki (NAIST)
  15:00-15:15 Break ( 15 min. )
(17) 15:15-15:30 Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. SDM2012-131 Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST)
(18) 15:30-15:45 Improvement of conversion efficiency for solar cell with MOS structure. SDM2012-132 Takahiro Kobayashi, Naoto Matsuo, Akira Heya (Univ. of Hyogo)
(19) 15:45-16:00 Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based SDM2012-133 Emi Sugimura, Shigekazu Shimazaki, Ayumi Tani, Takashi Fuyuki (NAIST)
(20) 16:00-16:15 Fabrication of Ferroelectric Microstructures by Proton Beam Irradiation SDM2012-134 Masaki Yamaguchi, Kazuki Watanabe (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)
(21) 16:15-16:30 Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory SDM2012-135 Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.)
(22) 16:30-16:45 Memory characteristics of ReRAM filament confined in localized area. SDM2012-136 Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.)
(23) 16:45-17:00 Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures SDM2012-137 Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,)

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