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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Takao Waho
Vice Chair Masaaki Kuzuhara
Secretary Tsuyoshi Tanaka, Manabu Arai
Assistant Shin-ichiro Takatani, Koichi Murata

Technical Committee on Microwaves (MW) [schedule] [select]
Chair Kiyomichi Araki
Vice Chair Osamu Hashimoto
Secretary Ken-ichi Maruhashi, Yoshinori Kogami
Assistant Koji Wada, Kouta Matsumoto

Conference Date Wed, Jan 17, 2007 09:45 - 17:45
Thu, Jan 18, 2007 09:45 - 17:05
Fri, Jan 19, 2007 09:45 - 17:05
Topics  
Conference Place  

Wed, Jan 17  
09:45 - 17:45
(1) 09:45-10:10 Reduced Gain Variation against Temperature with NTC Thermistor on HPA Module for W-CDMA System Akira Kuriyama (CRL), Shigehiro Yuyama (Renesas), Masami Ohnishi, Hidetoshi Matsumoto (CRL), Tomonori Tanoue, Isao Ohbu (Renesas)
(2) 10:10-10:35 Vdd Gate Biasing RF CMOS Amplifier Design Technique Based on the Effect of Carrier Velocity Saturation Noboru Ishihara (Gunma Univ.)
(3) 10:35-11:00 Design of Miniaturized Microstrip Lumped-Element Ultra-Wideband Bandpass Filters Zhewang Ma, Hiroaki Ishihara, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.)
  11:00-11:10 Break ( 10 min. )
(4) 11:10-11:35 Design of Compact Microstrip Bandpass Filters Using Lumped-Element Composite Resonators Zhewang Ma, Hisayoshi Abe, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.)
(5) 11:35-12:00 Novel Triple-band Bandpass Filter Using Composite Resonator Taichi Shimizu, Zhewang Ma, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.)
  12:00-13:30 Break ( 90 min. )
(6) 13:30-13:55 - Shin Matsumoto (UEC), Yukihiro Shimakata, Mitsuyuki Yamauchi (TAIYO YUDEN), Koji Wada, Takashi Iwasaki (UEC)
(7) 13:55-14:20 - Nobuhiko Okuzaki (UEC), Yukihiro Shimakata, Mitsuyuki Yamauchi (TAIYO YUDEN), Koji Wada, Takashi Iwasaki (UEC)
(8) 14:20-14:45 Submillimeter Wave Radiation Characteristics from a Periodic Metal Structure on Solid-State Plasma Kazuya Doi, Shinichi Yodokawa, Satoru Kousaka, Tetsuo Obunai (Akita Univ.)
  14:45-14:55 Break ( 10 min. )
(9) 14:55-15:20 Ku-band Oscillators with Reflection Type Zero-th Order Resonator Hiroyuki Mizutani, Masaomi Tsuru, Kenji Kawakami, Tamotsu Nishino, Moriyasu Miyazaki (Mitsubishi Electric Corp.)
(10) 15:20-15:45 A Fundamental Study on Improving Near Out-of-Band Characteristics of BPF Using Branch-Stub Resonators Takenori Yasuzumi, Takanobu Ohno, Osamu Hashimoto (Aoyama Gakuin Univ.), Koji Wada (The Univ. of Electron-Communications)
(11) 15:45-16:10 Band-Switching Multi-band Isolator Takayuki Furuta, Atsushi Fukuda, Hiroshi Okazaki, Shoichi Narahashi (NTT DOCOMO)
(12) 16:10-16:35 development of CP-MCT used for in vivo mesasurement of arms or legs (without presentation) Takashi Ishiguro, Naoyuki Iwata, Yuki Mitsuboshi, Yasuaki Miyazaki, Michio Miyakawa (Niigata Univ.)
  16:35-16:45 Break ( 10 min. )
(13) 16:45-17:45 [Special Talk]
A Report on the 36th European Microwave Conference
Tomohiro Seki, Hideki Kamitsuna (NTT), Atsushi Fukuda (NTT DoCoMo), Takayuki Tanaka (Saga University), Tamotsu Nishino, Kenichi Miyaguchi (Mitsubishi Electric Corporation), Chun-Ping Chen (Kanagawa University), Shinya Sugiura (Toyota Central R&D Labs., Inc.), Yasuhiro Kazama (Japan Radio CO.,Ltd.)
Thu, Jan 18  
09:45 - 17:05
(14) 09:45-10:10 - - Nguyen Quoc Dinh, Nguyen Thanh, Toshihisa Kamei, Yozo Utsumi (NDA)
(15) 10:10-10:35 - Takehiko Maeda, Toshihisa Kamei, Yozo Utsumi (NDA)
(16) 10:35-11:00 * Takeshi Izuho, Futoshi Kuroki (Kure Nat'l Coll of Tech), Tsukasa Yoneyama (Tohoku Inst of Tech)
  11:00-11:10 Break ( 10 min. )
(17) 11:10-11:35 * Futoshi Kuroki, Hiroshi Ohta (Kure Nat'l Coll of Tech)
(18) 11:35-12:00 * Futoshi Kuroki, Hiroshi Ohta (Kure Nat'l Coll of Tech)
  12:00-13:00 Break ( 60 min. )
(19) 13:00-13:25 * Futoshi Kuroki, Kazuya Miyamoto, Ryo-ta Masumoto, Ryo-ji Tamaru (Kure Nat'l Coll of Tech)
(20) 13:25-13:50 * Futoshi Kuroki, Kazuya Miyamoto (Kure Nat'l Coll of Tech)
(21) 13:50-14:15 Characterization of coupling coefficient of microwave resonators by FDTD method Kenji Suzuki, Tetsuya Ishida, Ikuo Awai (Ryukoku Univ.)
(22) 14:15-14:40 - Tatsuya Fukunaga (TDK), Koji Wada (UEC)
  14:40-14:50 Break ( 10 min. )
(23) 14:50-15:15 A study on material measurement methods using FDTD simulation techniques
-- Measurements of surface resistance of metals and dielectric plates including semiconductor wafer in millimeter-wave range --
Yukio Iida, Koichi Nakao, Yasuhisa Omura, Susumu Tamura (Kansai Univ.)
(24) 15:15-15:40 A Study on the Measurement of Complex Permittivity of Powder Using Low Melting Point Plastic Kenjiro Otsuka, Akihiro Sato, Osamu Hashimoto (Aoyama Gakuin Univ.)
(25) 15:40-16:05 A Study on Measurement of a Complex Relative Permittivity Tensor of High Lossy Material Using Lens Antennas Masanao Miyamoto, Osamu Hashimoto, Shinya Watanabe (Aoyama Univ.)
  16:05-16:15 Break ( 10 min. )
(26) 16:15-16:40 Dual-Frequency Responsive Microwave Absorber for Wireless LAN Using a Plaster Board and Resistive Film Takuya Nakamura, Kenjiro Otsuka, Yuichi Sakumo, Osamu Hashimoto (Aoyama Gakuin Univ.)
(27) 16:40-17:05 A Study on Wave Absorber with Circular Lattice Using Rubber Sheet with Fine Weatherability Takeru Ozawa, Kouta Matsumoto, Yu Miura (Aoyama Gakuin Univ.), Osamu Okada (Bridgestone Corp.), Osamu Hashimoto (Aoyama Gakuin Univ.)
Fri, Jan 19  
09:45 - 17:05
(28) 09:45-10:10 A 2.4-V Reference Voltage Operation InGaP-HBT MMIC Power Amplifier for CDMA Handsets Takao Moriwaki, Kazuya Yamamoto, Nobuyuki Ogawa, Takeshi Miura, Kosei Maemura, Teruyuki Shimura (Mitsubishi Electric)
(29) 10:10-10:35 A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations Isao Takenaka, Koji Ishikura, Hidemasa Takahashi, Koichi Hasegawa, Takashi Ueda, Toshimichi Kurihara, Kazunori Asano, Naotaka Iwata (NEC Electronics)
(30) 10:35-11:00 A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.)
  11:00-11:10 Break ( 10 min. )
(31) 11:10-11:35 A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT Akira Inoue, Hirotaka Amasuga, Seiki Goto, Tetsuo Kunii, Tomoki Oku, Takahide Ishikawa (Mitsubishi)
(32) 11:35-12:00 A Miniaturized, Wideband 8x8 Switch Matrix MMIC Using InP HEMTs Hideki Kamitsuna (NTT), Yasuro Yamane (NEL), Masami Tokumitsu (NTT), Hirohiko Sugahara (NTT-AT), Takatomo Enoki (NTT)
  12:00-13:00 Break ( 60 min. )
(33) 13:00-13:25 A 0/20-dB Step Attenuator Using GaAs-HBT Compatible, AC-Coupled, Stack-Type Base-Collector Diode Switches Kazuya Yamamoto, Miyo Miyashita, Nobuyuki Ogawa, Takeshi Miura, Teruyuki Shimura (Mitsubishi Electric)
(34) 13:25-13:50 Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE)
(35) 13:50-14:15 High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT)
  14:15-14:25 Break ( 10 min. )
(36) 14:25-14:50 Improvement of Breakdown Voltage in Double-Heterojunction III-N FET with AlN Buffer Layer Hisayoshi Matsuo, Hiroaki Ueno, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd.)
(37) 14:50-15:15 A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)
(38) 15:15-15:40 Current collapse of inslated-gate GaN-HEMT Masahito Kanamura, Toshihiro Ohki, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa, Kazukiyo Joshin (Fujitsu, Fujitsu Labs.)
  15:40-15:50 Break ( 10 min. )
(39) 15:50-16:15 High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor)
(40) 16:15-16:40 Over 80W Output Power X-band AlGaN/GaN HEMT Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba)
(41) 16:40-17:05 GaN-HEMT with high breakdown voltage and high fmax for millimeter-wave application Kozo Makiyama, Toshihiro Ohki, Kenji Imanishi, Masahito Kanamura (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Tsuyoshi Tanaka(Matsushita)
TEL: 075-956-9083, FAX: 075-956-9110
E-: erlci
Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl 
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Koji Wada(UEC)
TEL:0424-43-5212,FAX:0424-43-5212
E-:eec 


Last modified: 2006-12-09 19:18:59


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