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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Takahiro Shinada (Tohoku Univ.)
Vice Chair Hiroshige Hirano (TowerJazz Panasonic)
Secretary Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
Assistant Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

Conference Date Tue, Jan 29, 2019 09:30 - 16:30
Topics  
Conference Place Kikai Shinko Kaikan B3F Kenshuu-2 
Address 3-5-8, Shibakoen, Minato-ku, Tokyo, 105-0011, Japan.
Transportation Guide http://www.jspmi.or.jp/english/about/access.html
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Tue, Jan 29 PM 
09:30 - 16:30
(1) 09:30-09:55 [Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors SDM2018-81
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo)
(2) 09:55-10:20 [Invited Talk]
Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors SDM2018-82
Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo)
(3) 10:20-10:45 [Invited Talk]
Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor SDM2018-83
Li Xiuyan, Akira Toriumi (Univ. of Tokyo)
  10:45-11:00 Break ( 15 min. )
(4) 11:00-11:25 [Invited Talk]
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study SDM2018-84
Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo)
(5) 11:25-11:50 [Invited Talk]
Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential SDM2018-85
Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo)
  11:50-13:20 Lunch Break ( 90 min. )
(6) 13:20-13:45 [Invited Talk]
Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique SDM2018-86
Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas)
(7) 13:45-14:10 [Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure SDM2018-87
Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU)
(8) 14:10-14:35 [Invited Talk]
Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process
Hideo Sato, Tetsuo Endoh (Tohoku Univ.)
  14:35-14:50 Break ( 15 min. )
(9) 14:50-15:15 [Invited Talk]
Half pitch 14 nm direct pattering with Nanoimprint lithography SDM2018-88
Tetsuro Nakasugi (Toshiba Memory Corp.)
(10) 15:15-15:40 [Invited Talk]
Silicon Isotope Technology for Quantum Computing SDM2018-89
Satoru Miyamoto (Keio Univ.), Usami Noritaka (Nagoya Univ.), Kohei M. Itoh (Keio Univ.)
(11) 15:40-16:05 [Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss SDM2018-90
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo)
(12) 16:05-16:30  

Announcement for Speakers
Invited TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Tetsu Morooka(Toshiba Memory Corp.)
Tel 059-390-7451 Fax 059-361-2739
E-: ba 


Last modified: 2018-11-28 13:46:48


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