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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Tamotsu Hashidume (Hokkaido Univ.)
Vice Chair Toru Kaji (Toyota Central R&D Labs.)
Secretary Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)
Assistant Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant Katsunori Onishi (Kyushu Inst. of Tech.)

Conference Date Wed, Jun 24, 2009 13:00 - 18:00
Thu, Jun 25, 2009 08:30 - 13:30
Fri, Jun 26, 2009 08:30 - 13:00
Topics 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Conference Place Haeundae Grand Hotel( Busan, Korea) 
Address 651-2 Woo-Dong, Haeundae-Gu, Busan 612-020, Korea
Transportation Guide 1 hour on bus from the Airport , every 20 minutes.
http://www.grandhotel.co.kr/english/default.aspx
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Wed, Jun 24 PM  Plenary session (Room Jungwon)
13:00 - 13:50
(1) 13:00-13:10 Opening Remark
(2) 13:10-13:50 [Keynote] A perspective on silicon industry : challenges and opportunities
S. Y. Choi (Samsung Electronics)
  13:50-14:00 Break ( 10 min. )
Wed, Jun 24 PM  Session 1A Power Devices & Circuits (Room Jungwon)
14:00 - 18:00
(3) 14:00-14:30 [Invited Talk]
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband ED2009-50 SDM2009-45
Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.)
(4) 14:30-15:00 [Invited Talk]
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits ED2009-51 SDM2009-46
Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.)
(5) 15:00-15:15 Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit ED2009-52 SDM2009-47 Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.)
(6) 15:15-15:30 Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits ED2009-53 SDM2009-48 Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.)
  15:30-16:00 Break ( 30 min. )
(7) 16:00-16:15 Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System. ED2009-54 SDM2009-49 Jae-Young Park, Jong-Kyu Song, Dae-Woo Kim, Chang-Soo Jang, Won-Young Jung, Taek-Soo Kim (Dongbu HiTek)
(8) 16:15-16:30 Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation ED2009-55 SDM2009-50 Tetsuo Endoh, Hyoungjun Na (Tohoku Univ.)
(9) 16:30-16:45 A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology ED2009-56 SDM2009-51 Seung-Woo Seo, Jae-Sung Rieh (Korea Univ.)
(10) 16:45-17:00 A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies ED2009-57 SDM2009-52 Kenichi Abe, Takafumi Fujisawa, Akinobu Teramoto, Syunichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(11) 17:00-17:15 A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver ED2009-58 SDM2009-53 Jeongjun Lee, Jikyung Jeong, Jinwook Burm (Sogang University)
(12) 17:15-17:30 A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication ED2009-59 SDM2009-54 Jikyung Jeong, Jeongjun Lee, Jinwook Burm (Sogang University)
(13) 17:30-17:45 Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects ED2009-60 SDM2009-55 Sadaharu Ito, Michihiko Suhara (Tokyo Metro Univ.)
(14) 17:45-18:00 Fabrication of copper pillar tin bump (CPTB) for high density chip interconnect technology
O. C. Chung, J. M. Lee, J. K. Kim, S. J. Hong, I. W. Cho (Myongji Univ.)
Wed, Jun 24 PM  Session 1B Emerging Devices I (Room Namwon)
14:00 - 18:00
(15) 14:00-14:30 [Invited Talk]
Metrology of microscopic properties of graphene on SiC ED2009-61 SDM2009-56
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL)
(16) 14:30-15:00 [Invited Talk]
Theoretical study on graphene field-effect transistors ED2009-62 SDM2009-57
Eiichi Sano (Hokkaido Univ./JST), Taiichi Otsuji (Tohoku Univ../JST)
(17) 15:00-15:30 [Invited]
A nanotube and nanowire integrated sensor array for the detection of multiple hazardous gases
J. W. Lee*, K. Y. Dong*, Y. M. Park*, K. S. Lee*, J. Choi*, J. H. Lee*, H. H. Choi**, S. D.
Kim***, E. K. Kim†, B. K. Ju* (*Korea Univ., **Yonsei Univ., ***KETI, †Seoul National Univ. of Technology)
  15:30-16:00 Break ( 30 min. )
(18) 16:00-16:15 Characteristics of organic field-effect-transistor with high dielectric constant layer S. Lee, Y. J. Choi, J. Park, K. Y. Ko, I.. S. Park, J. Ahn (Hanyang Univ.)
(19) 16:15-16:30 Electrical characteristics of OFETs with thin gate dielectric ED2009-63 SDM2009-58 Young-uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.)
(20) 16:30-16:45 Design of 30nm FinFET with Halo Structure ED2009-64 SDM2009-59 Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ../JST-CREST)
(21) 16:45-17:00 Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier. ED2009-65 SDM2009-60 Joung-eob Lee, Kwon-Chil Kang, Jung-Han Lee, Byung-Gook Park (Seoul National Univ.)
(22) 17:00-17:15 Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump ED2009-66 SDM2009-61 Lijing Qiu (Kyushu Univ.), Naoya Watanabe (Fukuoka-IST), Tanemasa Asano (Kyushu Univ.)
(23) 17:15-17:30 A new Combination of RSD and Inside Spacer Thin Film Transistor ED2009-67 SDM2009-62 M. J. Chang, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.)
(24) 17:30-17:45 Gate-all-around tunnel field-effect transistor (GAA TFET) with vertical channel and n-doped layer
D. S. Lee, H. S. Yang, K. C. Kang, J. E. Lee, J. H. Lee, B. G. Park (Seoul National Univ.)
(25) 17:45-18:00 A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor ED2009-69 SDM2009-64 Jin Kwan Kim (KAIST), Keedong Yang (i3system Conp.), Yong Soo Lee (KAIST), Hee Chul Lee (KAIST/National Nanofab Center)
Thu, Jun 25 AM  Session 2A Compound Semiconductor Devices (Room Jungwon)
08:30 - 13:30
(26) 08:30-09:00 [Invited Talk]
Electron Devices Based on GaN and Related Nitride Semiconductors ED2009-70 SDM2009-65
Masaaki Kuzuhara (Univ. of Fukui)
(27) 09:00-09:30 [Invited Talk]
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility ED2009-71 SDM2009-66
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.)
(28) 09:30-10:00 [Invited Talk]
InGaAs/InP MISFET with epitaxially grown source ED2009-72 SDM2009-67
Yasuyuki Miyamoto, Toru Kanazawa, Hisashi Saito, Kazuhito Furuya (Tokyo Inst. of Tech.)
(29) 10:00-10:30 [Invited]
Effect of contact resistance on the performance of a-IGZO thin film transistors
S. Y. Lee (KIST)
  10:30-10:45 Break ( 15 min. )
(30) 10:45-11:00 4H-SiC Avalanche Photodiodes for 280 nm UV Detection. ED2009-73 SDM2009-68 B. R. Park, H. Sung, Chun-Hyung Cho (Hongik Univ.), P. M. Sandvik (GE), Ho-Young Cha (Hongik Univ.)
(31) 11:00-11:15 Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition ED2009-74 SDM2009-69 Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.)
(32) 11:15-11:30 InP Gunn diodes with shallow-barrier Schottky contacts. ED2009-75 SDM2009-70 M. R. Kim, J. K. Rhee, S. D. Lee, Y. S. Chae, S. K. Sharma, A. Kathalingam, C. W. Lee, H. J. Lim (Dongguk Univ.), J. H. Choi, W. J. Kim (Agency for Defense Development)
(33) 11:30-11:45 Formation and application of InP porous structures on p-n substrates ED2009-76 SDM2009-71 Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.)
(34) 11:45-12:00 A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer ED2009-77 SDM2009-72 Y. J. Chen, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.)
(35) 12:00-12:15 Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network ED2009-78 SDM2009-73 Seiya Kasai (Hokkaido Univ./PRESTO JST), Tetsuya Asai, Yuta Shiratori, Daisuke Nakata (Hokkaido Univ.)
(36) 12:15-12:30 Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector ED2009-79 SDM2009-74 Yasuyuki Miyamoto, Shinnosuke Takahashi, Takashi Kobayashi, Hiroyuki Suzuki, Kazuhito Furuya (Tokyo Inst. of Tech.)
(37) 12:30-12:45 Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission ED2009-80 SDM2009-75 Toshihiro Itoh, Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata (NTT)
(38) 12:45-13:00 Characteristics of GaN p-n diodes fabricated on a free-standing GaN substrate
T. Uesugi*, N. Soejima*, T. Kachi*, T. Hashizume** (*Toyota Central R&D Labs, **Hokkaido
Univ.)
(39) 13:00-13:15 Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces ED2009-81 SDM2009-76 J. H. Ahn (Korea University), J. H. Lee, T. W. Koo (Sungkyunkwan Univ/Korea University), M. G. Kang (Korea University), D. M. Whang (Sungkyunkwan Univ/Korea University), S. W. Hwang (Korea University)
(40) 13:15-13:30 Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN ED2009-82 SDM2009-77 Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki)
Thu, Jun 25 AM  Session 2B Silicon & Bio-Devices (Room Namwon)
09:00 - 13:15
(41) 09:00-09:30 [Invited Talk]
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array ED2009-83 SDM2009-78
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.)
(42) 09:30-10:00 [Invited Talk]
MOS Transistors fabricated on Si(551) surface based on radical reaction processes ED2009-84 SDM2009-79
Akinobu Teramoto, Weitao Cheng, Chingfoa Tye, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(43) 10:00-10:30 [Invited]
Dielectrophoresis based cell separation technique for high throughput, purity
J. Y. Park (Sogang Univ.)
  10:30-10:45 Break ( 15 min. )
(44) 10:45-11:15 [Invited]
Transport through DNA molecules and possible applications to future devices
J. S. Hwang*, D. Ahn**, S. W. Hwang* (*Korea Univ., **Univ. of Seoul)
(45) 11:15-11:45 [Invited]
MEMS for bio-medical applications in Malaysia
B. Y. Majlis (Univ. Kebangsaan Malaysia)
(46) 11:45-12:00 Effective Annealing for Si film ED2009-85 SDM2009-80 Takashi Noguchi, Tomoyuki Miyahira, Yeh Chen, Jean de dieu Mugiraneza (Univ. of Ryukyus)
(47) 12:00-12:15 Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy ED2009-86 SDM2009-81 Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)
(48) 12:15-12:30 Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor ED2009-87 SDM2009-82 Hideki Murakami, Syed Mahboob, Kiyotaka Katayama, Katsunori Makihara, Mitsuhisa Ikeda, Yumehiro Hata, Akio Kuroda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
(49) 12:30-12:45 Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages ED2009-88 SDM2009-83 C. H. Cho, H. Y. Cha (Hongik Univ.)
(50) 12:45-13:00 Study on Quantum Electro-Dynamics in Vertical MOSFET ED2009-89 SDM2009-84 Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST)
(51) 13:00-13:15 Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET ED2009-90 SDM2009-85 Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ./JST-CREST)
Fri, Jun 26 AM  Session 3A Emerging Devices II (Room Jungwon)
08:30 - 12:15
(52) 08:30-09:00 [Invited]
Solution-processed transparent conductive film and its applications
Y. T. Hong, M. K. Kwon, P. K. Nayak, J. H. Yang (Seoul National Univ.)
(53) 09:00-09:30 [Invited Talk]
Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor ED2009-91 SDM2009-86
Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.)
(54) 09:30-10:00 [Invited]
Si:Ge alloy nanowire optoelectronics
C. J. Kim, H. S. Lee, K. B. Kang, M. H. Cho (Postech)
(55) 10:00-10:30 [Invited]
Overview of technology progress in advanced gate stack for CMOS application and its
reliability issues
R. Choi (Inha Univ.)
  10:30-10:45 Break ( 15 min. )
(56) 10:45-11:15 [Invited]
Physical understanding of temperature dependent band gap energies in InAs nanostructures
O. S. Kopylov*†, M. H. Abdellatif†, J. D. Song†, W. J. Choi†, N. K. Cho†, J. I. Lee† (*National
Technical Univ. of Ukraine, †KIST)
(57) 11:15-11:30 Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots ED2009-92 SDM2009-87 Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki (Hiroshima Univ.)
(58) 11:30-11:45 Fabrication of Silicon nanowire FET using transfer technology W. H. Kim (Korea Electronics Technology Institute)
(59) 11:45-12:00 Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot ED2009-93 SDM2009-88 Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.)
(60) 12:00-12:15 Fabrication of double-dot single-electron transistor in silicon nanowire ED2009-94 SDM2009-89 Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.)
Fri, Jun 26 AM  Session 3B Memory Devices(Room Namwon)
09:00 - 12:00
(61) 09:00-09:30 [Invited]
SONOS-type flash memory with thin HfO2 as trapping layer using atomic layer deposition
J. S. Oh*, K. I. Choi*, D. H. Nam*, Y. S. Kim*, M. H. Kang*, M. H. Song*, S. K. Lim*, D. E.
Yoo*, S. S. Park*, J. S. Kim**, Y. C. Park**, H. D. Lee*, G. W. Lee* (*Chungnam National Univ.,
**National Nanofab Center)
(62) 09:30-10:00 [Invited Talk]
Future High Density Memory with Vertical Structured Device Technology ED2009-95 SDM2009-90
Tetsuo Endoh (Tohoku Univ.)
(63) 10:00-10:15 Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory. ED2009-96 SDM2009-91 Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.)
(64) 10:15-10:30 Architecture and verification of the row chain cell array for polymer random access memory ED2009-97 SDM2009-92 Jung ha Kim, Chang yong Ahn, Sang sun Lee (Hanyang Univ.)
  10:30-11:00 Break ( 30 min. )
(65) 11:00-11:15 Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al2O3 and SiO2 stacked tunneling layers. ED2009-98 SDM2009-93 H. W. Kim, D. H. Kim, J. H. You, T. W. Kim (Hanyang Univ.)
(66) 11:15-11:30 Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time ED2009-99 SDM2009-94 Woojun Lee, Woo Young Choi (Sogang Univ.)
(67) 11:30-11:45 Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions ED2009-100 SDM2009-95 J. W. Lee, J. H. You, S. H. Jang, K. D. Kwack, T. W. Kim (Hanyang Univ.)
(68) 11:45-12:00 Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. ED2009-101 SDM2009-96 Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
Fri, Jun 26 PM  Closing Session
12:30 - 13:00
(69) 12:30-13:00 Closing Remark

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E- geba 


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