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電子デバイス研究会(ED) [schedule] [select]
専門委員長 橋詰 保 (北大)
副委員長 加地 徹 (豊田中研)
幹事 村田 浩一 (NTT), 原 直紀 (富士通研)
幹事補佐 津田 邦男 (東芝), 須原 理彦 (首都大東京)

シリコン材料・デバイス研究会(SDM) [schedule] [select]
専門委員長 渡辺 重佳 (湘南工科大)
副委員長 杉井 寿博 (富士通マイクロエレクトロニクス)
幹事 安斎 久浩 (ソニー), 遠藤 哲郎 (東北大)
幹事補佐 大西 克典 (九工大)

日時 2009年 6月24日(水) 13:00 - 18:00
2009年 6月25日(木) 08:30 - 13:30
2009年 6月26日(金) 08:30 - 13:00
議題 第17回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2009) 
会場名 海雲台グランドホテル(韓国、釜山) 
住所 651-2 Woo-Dong, Haeundae-Gu, Busan 612-020, Korea
交通案内 釜山空港からリムジンバスで1時間(20分おき, 7:10-21:40)
http://www.grandhotel.co.kr/japanese/default.aspx

6月24日(水) 午後  Plenary session (Room Jungwon)
13:00 - 13:50
(1) 13:00-13:10 Opening Remark
(2) 13:10-13:50 [Keynote] A perspective on silicon industry : challenges and opportunities
S. Y. Choi (Samsung Electronics)
  13:50-14:00 休憩 ( 10分 )
6月24日(水) 午後  Session 1A Power Devices & Circuits (Room Jungwon)
14:00 - 18:00
(3) 14:00-14:30 [招待講演]CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband Toshihide SuzukiYoichi KawanoFujitsu/Fujitsu Labs.)・Masaru SatoFujitsu Labs.)・Yasuhiro NakashaTatsuya HiroseFujitsu/Fujitsu Labs.)・Naoki HaraFujitsu Labs.)・Kazukiyo JoshinFujitsu/Fujitsu Labs.
(4) 14:30-15:00 [招待講演]Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits Shoji IkedaTohoku Univ.)・Jun HayakawaHitachi, Ltd.)・Huadong GanKotaro MizumumaJi Ho ParkTohoku Univ.)・Hiroyuki YamamotoKatsuya MiuraHitachi, Ltd./Tohoku Univ.)・Haruhiro HasegawaRyutaro SasakiToshiyasu MeguroTohoku Univ.)・Kenchi ItoHitachi, Ltd.)・Fumihiro MatsukuraHideo OhnoTohoku Univ.
(5) 15:00-15:15 Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit Masashi KamiyanagiFumitaka IgaShoji IkedaTohoku Univ.)・Katsuya MiuraTohoku Univ./Hitachi)・Jun HayakawaHitachi)・Haruhiro HasegawaTakahiro HanyuHideo OhnoTetsuo EndohTohoku Univ.
(6) 15:15-15:30 Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits Fumitaka IgaMasashi KamiyanagiShoji IkedaTohoku Univ.)・Katsuya MiuraTohoku Univ./Hitachi)・Jun HayakawaHitachi)・Haruhiro HasegawaTakahiro HanyuHideo OhnoTetsuo EndohTohoku Univ.
  15:30-16:00 休憩 ( 30分 )
(7) 16:00-16:15 Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System. Jae-Young ParkJong-Kyu SongDae-Woo KimChang-Soo JangWon-Young JungTaek-Soo KimDongbu HiTek
(8) 16:15-16:30 Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation Tetsuo EndohHyoungjun NaTohoku Univ.
(9) 16:30-16:45 A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology Seung-Woo SeoJae-Sung RiehKorea Univ.
(10) 16:45-17:00 A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies Kenichi AbeTakafumi FujisawaAkinobu TeramotoSyunichi WatabeShigetoshi SugawaTadahiro OhmiTohoku Univ.
(11) 17:00-17:15 A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver Jeongjun LeeJikyung JeongJinwook BurmSogang University
(12) 17:15-17:30 A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication Jikyung JeongJeongjun LeeJinwook BurmSogang University
(13) 17:30-17:45 Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects Sadaharu ItoMichihiko SuharaTokyo Metro Univ.
(14) 17:45-18:00 Fabrication of copper pillar tin bump (CPTB) for high density chip interconnect technology
O. C. Chung, J. M. Lee, J. K. Kim, S. J. Hong, I. W. Cho (Myongji Univ.)
6月24日(水) 午後  Session 1B Emerging Devices I (Room Namwon)
14:00 - 18:00
(15) 14:00-14:30 [招待講演]Metrology of microscopic properties of graphene on SiC Masao NagaseHiroki HibinoHiroyuki KageshimaHiroshi YamaguchiNTT BRL
(16) 14:30-15:00 [招待講演]Theoretical study on graphene field-effect transistors Eiichi SanoHokkaido Univ./JST)・Taiichi OtsujiTohoku Univ../JST
(17) 15:00-15:30 [招待講演]
A nanotube and nanowire integrated sensor array for the detection of multiple hazardous gases
J. W. Lee*, K. Y. Dong*, Y. M. Park*, K. S. Lee*, J. Choi*, J. H. Lee*, H. H. Choi**, S. D.
Kim***, E. K. Kim†, B. K. Ju* (*Korea Univ., **Yonsei Univ., ***KETI, †Seoul National Univ. of Technology)
  15:30-16:00 休憩 ( 30分 )
(18) 16:00-16:15 Characteristics of organic field-effect-transistor with high dielectric constant layer S. LeeY. J. ChoiJ. ParkK. Y. KoI.. S. ParkJ. AhnHanyang Univ.
(19) 16:15-16:30 Electrical characteristics of OFETs with thin gate dielectric Young-uk SongShun-ichiro OhmiHiroshi IshiwaraTokyo Inst. of Tech.
(20) 16:30-16:45 Design of 30nm FinFET with Halo Structure Tetsuo EndohKoji SakuiYukio YasudaTohoku Univ../JST-CREST
(21) 16:45-17:00 Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier. Joung-eob LeeKwon-Chil KangJung-Han LeeByung-Gook ParkSeoul National Univ.
(22) 17:00-17:15 Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump Lijing QiuKyushu Univ.)・Naoya WatanabeFukuoka-IST)・Tanemasa AsanoKyushu Univ.
(23) 17:15-17:30 A new Combination of RSD and Inside Spacer Thin Film Transistor M. J. ChangT. C. LiF. T. ChienFeng Chia Univ.)・C. N. LiaoY. T. TsaiNational Central Univ.
(24) 17:30-17:45 Gate-all-around tunnel field-effect transistor (GAA TFET) with vertical channel and n-doped layer
D. S. Lee, H. S. Yang, K. C. Kang, J. E. Lee, J. H. Lee, B. G. Park (Seoul National Univ.)
(25) 17:45-18:00 A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor Jin Kwan KimKAIST)・Keedong Yangi3system Conp.)・Yong Soo LeeKAIST)・Hee Chul LeeKAIST/National Nanofab Center
6月25日(木) 午前  Session 2A Compound Semiconductor Devices (Room Jungwon)
08:30 - 13:30
(26) 08:30-09:00 [招待講演]Electron Devices Based on GaN and Related Nitride Semiconductors Masaaki KuzuharaUniv. of Fukui
(27) 09:00-09:30 [招待講演]InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility Masanobu HirokiNarihiko MaedaTakashi KobayashiNaoteru ShigekawaNTT PH Labs.
(28) 09:30-10:00 [招待講演]InGaAs/InP MISFET with epitaxially grown source Yasuyuki MiyamotoToru KanazawaHisashi SaitoKazuhito FuruyaTokyo Inst. of Tech.
(29) 10:00-10:30 [招待講演]
Effect of contact resistance on the performance of a-IGZO thin film transistors
S. Y. Lee (KIST)
  10:30-10:45 休憩 ( 15分 )
(30) 10:45-11:00 4H-SiC Avalanche Photodiodes for 280 nm UV Detection. B. R. ParkH. SungChun-Hyung ChoHongik Univ.)・P. M. SandvikGE)・Ho-Young ChaHongik Univ.
(31) 11:00-11:15 Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition Kimihito OoyamaHokkaido Univ/Sumitomo Metal Mining)・Chihoko MizueYujin HoriTamotsu HashizumeHokkaido Univ.
(32) 11:15-11:30 InP Gunn diodes with shallow-barrier Schottky contacts. M. R. KimJ. K. RheeS. D. LeeY. S. ChaeS. K. SharmaA. KathalingamC. W. LeeH. J. LimDongguk Univ.)・J. H. ChoiW. J. KimAgency for Defense Development
(33) 11:30-11:45 Formation and application of InP porous structures on p-n substrates Taketomo SatoNaoki YoshizawaHiroyuki OkazakiTamotsu HashizumeHokkaido Univ.
(34) 11:45-12:00 A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer Y. J. ChenT. C. LiF. T. ChienFeng Chia Univ.)・C. N. LiaoY. T. TsaiNational Central Univ.
(35) 12:00-12:15 Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network Seiya KasaiHokkaido Univ./PRESTO JST)・Tetsuya AsaiYuta ShiratoriDaisuke NakataHokkaido Univ.
(36) 12:15-12:30 Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector Yasuyuki MiyamotoShinnosuke TakahashiTakashi KobayashiHiroyuki SuzukiKazuhito FuruyaTokyo Inst. of Tech.
(37) 12:30-12:45 Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission Toshihiro ItohKimikazu SanoHiroyuki FukuyamaKoichi MurataNTT
(38) 12:45-13:00 Characteristics of GaN p-n diodes fabricated on a free-standing GaN substrate
T. Uesugi*, N. Soejima*, T. Kachi*, T. Hashizume** (*Toyota Central R&D Labs, **Hokkaido
Univ.)
(39) 13:00-13:15 Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces J. H. AhnKorea University)・J. H. LeeT. W. KooSungkyunkwan Univ/Korea University)・M. G. KangKorea University)・D. M. WhangSungkyunkwan Univ/Korea University)・S. W. HwangKorea University
(40) 13:15-13:30 Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN Ji-Ho ParkHiroshi OkadaAkihiro WakaharaYuzo FurukawaToyohashi Univ. of Tech.)・Yong-Tae KimDankook Univ.)・Jonghan SongKIST)・Ho-Jung ChangDankook Univ.)・Shin-ichiro SatoTakeshi OhshimaJAEA, Takasaki
6月25日(木) 午前  Session 2B Silicon & Bio-Devices (Room Namwon)
09:00 - 13:15
(41) 09:00-09:30 [招待講演]Novel-Functional Single-Electron Devices Using Silicon Nanodot Array Yasuo TakahashiTakuya KaizawaMingyu JoMasashi AritaHokkaido Univ.)・Akira FujiwarYukinori OnoNTT)・Hiroshi InokawaShizuoka Univ.)・Jung-Bum ChoiChungbuk National Univ.
(42) 09:30-10:00 [招待講演]MOS Transistors fabricated on Si(551) surface based on radical reaction processes Akinobu TeramotoWeitao ChengChingfoa TyeShigetoshi SugawaTadahiro OhmiTohoku Univ.
(43) 10:00-10:30 [招待講演]
Dielectrophoresis based cell separation technique for high throughput, purity
J. Y. Park (Sogang Univ.)
  10:30-10:45 休憩 ( 15分 )
(44) 10:45-11:15 [招待講演]
Transport through DNA molecules and possible applications to future devices
J. S. Hwang*, D. Ahn**, S. W. Hwang* (*Korea Univ., **Univ. of Seoul)
(45) 11:15-11:45 [招待講演]
MEMS for bio-medical applications in Malaysia
B. Y. Majlis (Univ. Kebangsaan Malaysia)
(46) 11:45-12:00 Effective Annealing for Si film Takashi NoguchiTomoyuki MiyahiraYeh ChenJean de dieu MugiranezaUniv. of Ryukyus
(47) 12:00-12:15 Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki SuwaTohoku Univ.)・Takashi ArataniShin-Etsu Chemical)・Masaaki HiguchiTOSHIBA)・Sigetoshi SugawaTohoku Univ.)・Eiji IkenagaJASRI)・Jiro UshioHitachi)・Hiroshi NohiraMusashi Inst. of Tech.)・Akinobu TeramotoTadahiro OhmiTakeo HattoriTohoku Univ.
(48) 12:15-12:30 Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor Hideki MurakamiSyed MahboobKiyotaka KatayamaKatsunori MakiharaMitsuhisa IkedaYumehiro HataAkio KurodaSeiichiro HigashiSeiichi MiyazakiHiroshima Univ.
(49) 12:30-12:45 Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages C. H. ChoH. Y. ChaHongik Univ.
(50) 12:45-13:00 Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu MuraguchiTetsuo EndohTohoku Univ./JST-CREST
(51) 13:00-13:15 Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET Tetsuo EndohKoji SakuiYukio YasudaTohoku Univ./JST-CREST
6月26日(金) 午前  Session 3A Emerging Devices II (Room Jungwon)
08:30 - 12:15
(52) 08:30-09:00 [招待講演]
Solution-processed transparent conductive film and its applications
Y. T. Hong, M. K. Kwon, P. K. Nayak, J. H. Yang (Seoul National Univ.)
(53) 09:00-09:30 [招待講演]Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor Taizoh SadohTakanori TanakaYasuharu OhtaKaoru TokoMasanobu MiyaoKyushu Univ.
(54) 09:30-10:00 [招待講演]
Si:Ge alloy nanowire optoelectronics
C. J. Kim, H. S. Lee, K. B. Kang, M. H. Cho (Postech)
(55) 10:00-10:30 [招待講演]
Overview of technology progress in advanced gate stack for CMOS application and its
reliability issues
R. Choi (Inha Univ.)
  10:30-10:45 休憩 ( 15分 )
(56) 10:45-11:15 [招待講演]
Physical understanding of temperature dependent band gap energies in InAs nanostructures
O. S. Kopylov*†, M. H. Abdellatif†, J. D. Song†, W. J. Choi†, N. K. Cho†, J. I. Lee† (*National
Technical Univ. of Ukraine, †KIST)
(57) 11:15-11:30 Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Katsunori MakiharaMitsuhisa IkedaAkira KawanamiSeiichi MiyazakiHiroshima Univ.
(58) 11:30-11:45 Fabrication of Silicon nanowire FET using transfer technology W. H. KimKorea Electronics Technology Institute
(59) 11:45-12:00 Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu MuraguchiTohoku Univ.)・Yukihiro TakadaShintaro NomuraUniv. of Tsukuba.)・Tetsuo EndohTohoku Univ.)・Kenji ShiraishiUniv. of Tsukuba.
(60) 12:00-12:15 Fabrication of double-dot single-electron transistor in silicon nanowire Mingyu JoTakuya KaizawaMasashi AritaHokkaido Univ.)・Akira FujiwaraYukinori OnoNTT)・Hiroshi InokawaShizuoka Univ.)・Jung-Bum ChoiChungbuk National Univ.)・Yasuo TakahashiHokkaido Univ.
6月26日(金) 午前  Session 3B Memory Devices(Room Namwon)
09:00 - 12:00
(61) 09:00-09:30 [招待講演]
SONOS-type flash memory with thin HfO2 as trapping layer using atomic layer deposition
J. S. Oh*, K. I. Choi*, D. H. Nam*, Y. S. Kim*, M. H. Kang*, M. H. Song*, S. K. Lim*, D. E.
Yoo*, S. S. Park*, J. S. Kim**, Y. C. Park**, H. D. Lee*, G. W. Lee* (*Chungnam National Univ.,
**National Nanofab Center)
(62) 09:30-10:00 [招待講演]Future High Density Memory with Vertical Structured Device Technology Tetsuo EndohTohoku Univ.
(63) 10:00-10:15 Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory. Yoon KimSeongjae ChoJang-Gn YunIl Han ParkGil Sung LeeDoo-Hyun KimDong Hua LiSe Hwan ParkWandong KimWonbo ShimByung-Gook ParkSeoul National Univ.
(64) 10:15-10:30 Architecture and verification of the row chain cell array for polymer random access memory Jung ha KimChang yong AhnSang sun LeeHanyang Univ.
  10:30-11:00 休憩 ( 30分 )
(65) 11:00-11:15 Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al2O3 and SiO2 stacked tunneling layers. H. W. KimD. H. KimJ. H. YouT. W. KimHanyang Univ.
(66) 11:15-11:30 Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time Woojun LeeWoo Young ChoiSogang Univ.
(67) 11:30-11:45 Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions J. W. LeeJ. H. YouS. H. JangK. D. KwackT. W. KimHanyang Univ.
(68) 11:45-12:00 Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. Seongjae ChoJung Hoon LeeYun KimJang-Gn YunHyungcheol ShinByung-Gook ParkSeoul National Univ.
6月26日(金) 午後  Closing Session
12:30 - 13:00
(69) 12:30-13:00 Closing Remark

問合先と今後の予定
ED 電子デバイス研究会(ED)   [今後の予定はこちら]
問合先 村田 浩一(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl
原 直紀 (富士通研究所)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
津田 邦男(東芝)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba 
SDM シリコン材料・デバイス研究会(SDM)   [今後の予定はこちら]
問合先 川中繁 (東芝)
TEL 045-776-5670, FAX 045-776-4104
E- geba 


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