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*** This workshop will be held as an online virtual conference due to prevention of the spread of coronavirus infection. ***





Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Hiroshige Hirano (TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi (Tokyo Inst. of Tech.)
Secretary Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
Assistant Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.)

Conference Date Tue, Jun 22, 2021 13:10 - 17:50
Topics Material Science and Process Technology for MOS Devices and Memories 
Conference Place Online Virtual Meeting 
Contact
Person
Takuji HOSOI (Kwansei Gakuin Univ.)
+81-79-565-7129
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.
Due for Registration Please proceed the payment of registration fee by June 17. The meeting URL will be announce from one of the secretaries of the committee via e-mail, just before the workshop date.

Tue, Jun 22 PM 
13:00 - 17:50
  13:00-13:10 8th SDM Young Excellence Award Ceremony ( 10 min. )
(1) 13:10-13:50 [Memorial Lecture]
Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.)
(2) 13:50-14:30 [Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface --
Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)
  14:30-14:40 Break ( 10 min. )
(3) 14:40-15:20 [Invited Lecture]
FET characteristics with 2D channel
Hitoshi Wakabayashi (Tokyo Tech)
(4) 15:20-16:00 [Invited Lecture]
Development of TFET-based qubits enabling high-temperature operation to realize silicon-based quantum computing
Takahiro Mori (AIST)
(5) 16:00-16:40 [Invited Lecture]
For understanding ferroelectric HfO2 toward its device applications
Akira Toriumi
  16:40-16:50 Break ( 10 min. )
(6) 16:50-17:10 Application-induced TaOx ReRAM Cell Reliability Variation Tolerated High-speed Storage Chihiro Matsui, Ken Takeuchi (Univ. Tokyo)
(7) 17:10-17:30 Influence of quantized bit precision and bit-error rate in Computation-in-Memory with ReRAM on optimal answers of combinatorial optimization problems Naoko Misawa, Kenta Taoka, Shunsuke Koshino, Chihiro Matsui, Ken Takeuchi (Univ. Tokyo)
(8) 17:30-17:50 Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

Announcement for Speakers
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.
Memorial LectureEach speech will have 30 minutes for presentation and 10 minutes for discussion.
Invited LectureEach speech will have 30 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address SDM Secretary: MORI Takahiro(National Institute of AIST)
Tel +81-29-849-1149
E-Mail -aist 


Last modified: 2021-04-27 15:57:35


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