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| Chair |
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Koichi Maezawa (Univ. of Toyama) |
| Vice Chair |
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Kunio Tsuda (Toshiba) |
| Secretary |
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Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) |
| Assistant |
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Manabu Arai (New JRC), Masataka Higashiwaki (NICT) |
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| Conference Date |
Fri, Jul 24, 2015 13:15 - 16:25
Sat, Jul 25, 2015 10:15 - 11:55 |
| Topics |
Semiconductor Processes and Devices |
| Conference Place |
IT Business Plaza Musashi 5F |
| Transportation Guide |
https://www.bp-musashi.jp/ |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Fri, Jul 24 PM
13:15 - 14:55 |
| (1) |
13:15-13:40 |
Electrical characteristics of N-polar p-type GaN Schottky contacts  ED2015-36 |
Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui) |
| (2) |
13:40-14:05 |
Characterization of Schottky diodes on cleaved m-plane surface of free-standing n-GaN substrates ED2015-37 |
Moe Naganawa, Toshichika Aoki (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) |
| (3) |
14:05-14:30 |
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs ED2015-38 |
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) |
| (4) |
14:30-14:55 |
Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices ED2015-39 |
Toshi-kazu Suzuki, Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih (JAIST) |
| |
14:55-15:10 |
Break ( 15 min. ) |
Fri, Jul 24 PM
15:10 - 16:25 |
| (5) |
15:10-15:35 |
Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy ED2015-40 |
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (MURA Corp.), Masataka Higashiwaki (NICT) |
| (6) |
15:35-16:00 |
Electrical properties of SiC MOSFETs with various substrate impurity concentrations ED2015-41 |
Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST) |
| (7) |
16:00-16:25 |
Fabrication of MFS-type diamond FET structure using organic ferroelectrics ED2015-42 |
Ryota Karaya, Hiroyuki Furuichi (Kanazawa Univ.), Takashi Nakajima (Tokyo Univ. of Sci.), Norio Tokuda, Takeshi Kawae (Kanazawa Univ.) |
Sat, Jul 25 AM
10:15 - 11:55 |
| (8) |
10:15-10:40 |
In-plane electrical properties of MnAs/InAs/GaAs(111)B heterostructures ED2015-43 |
Md Earul Islam, Cong Thanh Nguyen, Masashi Akabori (JAIST) |
| (9) |
10:40-11:05 |
Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain ED2015-44 |
Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) |
| (10) |
11:05-11:30 |
Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer ED2015-45 |
Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS) |
| (11) |
11:30-11:55 |
Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode ED2015-46 |
Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
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| Contact Address |
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Last modified: 2015-06-05 19:42:09
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