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Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Yoshiaki Nakano (Univ. of Tokyo)
Vice Chair Hiroshi Ishikawa (AIST)
Secretary Takayuki Yamanaka (NTT), Ken Morito (Fujitsu Labs.)

Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Koichi Murata (NTT)
Assistant Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kiichi Kamimura (Shinshu Univ.)
Vice Chair Kanji Yasui (Nagaoka Univ. of Tech.)
Secretary Hidehiko Shimizu (Niigata Univ.), Naoki Oba (NTT)
Assistant Yasushi Takemura (Yokohama National Univ.), Tadayuki Imai (NTT)

{INFOMESITEM}
Conference Date Thu, Nov 27, 2008 09:30 - 18:05
Fri, Nov 28, 2008 09:00 - 16:35
Topics Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Conference Place  
Contact
Person
052-735-5544
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Nov 27 AM 
09:25 - 18:05
  09:25-09:30 Opening Address ( 5 min. )
(1) 09:30-09:55 Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy ED2008-152 CPM2008-101 LQE2008-96 Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
(2) 09:55-10:20 Random lasing in GaN nanocolumns ED2008-153 CPM2008-102 LQE2008-97 Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.)
(3) 10:20-10:45 A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy ED2008-154 CPM2008-103 LQE2008-98 Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo)
  10:45-10:55 Break ( 10 min. )
(4) 10:55-11:20 Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates ED2008-155 CPM2008-104 LQE2008-99 Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center)
(5) 11:20-11:45 Improvement of AlN-template quality for deep-UV and UV light emitters ED2008-156 CPM2008-105 LQE2008-100 Tomohito Takeda, Hideaki Anzai, Hideo Kawanishi (Kogakuin)
(6) 11:45-12:10 Growth and Characterization of M-plane InN on LiAlO2 Substrate by RF-MBE ED2008-157 CPM2008-106 LQE2008-101 Yusuke Takagi, Hirokazu Nozawa, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
  12:10-13:10 Lunch Break ( 60 min. )
(7) 13:10-13:35 Electroluminescence study of GaN based devices with several hundreds nano-scale periodic structure fabricated by nano-imprint technique ED2008-158 CPM2008-107 LQE2008-102 Mitsuaki Tohno, Zhang Jing, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Junzo Wachi (SCIVAX Corp.)
(8) 13:35-14:00 Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region ED2008-159 CPM2008-108 LQE2008-103 Tohru Honda, Shigetoshi Komiyama, Yoshihiro Mashiyama, Kenji Watanabe (Kogakuin Univ.)
(9) 14:00-14:25 A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity ED2008-160 CPM2008-109 LQE2008-104 Masao Kawaguchi, Satoshi Tamura, Masaaki Yuri (Panasonic)
  14:25-14:35 Break ( 10 min. )
(10) 14:35-15:00 High-Power GaN-based Blue-Violet Laser Diodes ED2008-161 CPM2008-110 LQE2008-105 Shingo Kameyama, Yasumitsu Kunou, Kyouji Inoshita, Daijiro Inoue, Yasuyuki Bessho, Takenori Goto, Tatsuya Kunisato (SANYO)
(11) 15:00-15:25 Achieving P-type InN and Its Characterization
-- Present Status and Future Prospects --
ED2008-162 CPM2008-111 LQE2008-106
Akihiko Yoshikawa, Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani (Chiba Univ.)
(12) 15:25-15:50 Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light ED2008-163 CPM2008-112 LQE2008-107 Song-Bek Che, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.)
(13) 15:50-16:15 Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells ED2008-164 CPM2008-113 LQE2008-108 Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.)
  16:15-16:25 Break ( 10 min. )
(14) 16:25-16:50 Control of substrate curvature during MOVPE growth of AlGaN ED2008-165 CPM2008-114 LQE2008-109 Yuya Ogawahara, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
(15) 16:50-17:15 Low-pressure HVPE growth and characterization of AlN on period-trench-pattered substrate ED2008-166 CPM2008-115 LQE2008-110 Yusuke Katagiri, Kazuteru Okuura, Jiejun Wu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tetsuya Ezaki, Noriyuki Kuwano (Kyushu Univ.)
(16) 17:15-17:40 Toward high-power operation of 230nm-band AlGaN UV-LED ED2008-167 CPM2008-116 LQE2008-111 Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST)
(17) 17:40-18:05 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template ED2008-168 CPM2008-117 LQE2008-112 Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST)
Fri, Nov 28 AM 
09:00 - 16:35
(18) 09:00-09:25 280nm-band InAlGaN-based high-power deep-UV LEDs ED2008-169 CPM2008-118 LQE2008-113 Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.)
(19) 09:25-09:50 Analysis of AlGaN Growth on MOVPE by Computational Simulation ED2008-170 CPM2008-119 LQE2008-114 Akira Hirako, Masaya Ichikawa, Kennichi Nakamura, Kazuhiro Ohkawa (Tokyo Univ. of Sci.)
(20) 09:50-10:15 Luminescence properties from two types of prismatic planes of InGaN ED2008-171 CPM2008-120 LQE2008-115 Hisashi Kanie, Kenichi Akashi, Hidemi Tumuki (Tokyo University of Science)
(21) 10:15-10:40 Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates ED2008-172 CPM2008-121 LQE2008-116 Atsushi Yamaguchi (Kanazawa Inst. of Technology)
  10:40-10:50 Break ( 10 min. )
(22) 10:50-11:15 Two-Dimensional Analysis of Field-Plate Effects on Buffer-Related Lag Phenomena and Current Collapse in AlGaN/GaN HEMTs ED2008-173 CPM2008-122 LQE2008-117 Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio (Shibaura Inst. Tech.)
(23) 11:15-11:40 Optimum Design of AlGaN/GaN HEMTs with Field Plate ED2008-174 CPM2008-123 LQE2008-118 Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui)
(24) 11:40-12:05 Device simulation of HfO2/AlGaN/GaN MOSFET
-- effects of HfO2/AlGaN interface --
ED2008-175 CPM2008-124 LQE2008-119
Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
  12:05-13:05 Lunch Break ( 60 min. )
(25) 13:05-13:30 Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD ED2008-176 CPM2008-125 LQE2008-120 Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
(26) 13:30-13:55 Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer ED2008-177 CPM2008-126 LQE2008-121 Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC)
(27) 13:55-14:20 An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier ED2008-178 CPM2008-127 LQE2008-122 Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.)
(28) 14:20-14:45 Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/AlN multilayers ED2008-179 CPM2008-128 LQE2008-123 Takaaki Suzue, Masanori Suzuki, Yukiyasu Nomura, Takashi Egawa (Nagoya Inst. of Tech.)
  14:45-14:55 Break ( 10 min. )
(29) 14:55-15:20 Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures ED2008-180 CPM2008-129 LQE2008-124 Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT)
(30) 15:20-15:45 Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique ED2008-181 CPM2008-130 LQE2008-125 Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic)
(31) 15:45-16:10 Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure ED2008-182 CPM2008-131 LQE2008-126 Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.)
(32) 16:10-16:35 Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors ED2008-183 CPM2008-132 LQE2008-127 Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ)

Contact Address and Latest Schedule Information
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Takayuki Yamanaka (NTT Corporation)
TEL +81-46-240-4403, FAX +81-46-240-2859
E-: taecl 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Hidehiko Shimizu(Niigata University)
TEL 025-262-6811, FAX 025-262-6811
E-: engi-u

Yasushi Takemura(Yokohama National University)
TEL 045-339-4151, FAX 045-339-4151
E-: y 


Last modified: 2008-10-31 19:42:16


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