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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Koichi Maezawa (Univ. of Toyama)
Vice Chair Kunio Tsuda (Toshiba)
Secretary Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)
Assistant Masataka Higashiwaki (NICT), Toshiyuki Oishi (Saga Univ.)

Technical Committee on Microwaves (MW) [schedule] [select]
Chair Yohei Ishikawa (Kyoto Univ.)
Vice Chair Takao Kuki (Kokushikan Univ.), Kenjiro Nishikawa (Kagoshima Univ.), Kenichi Tajima (Mitsubishi Electric)
Secretary Junji Sato (Panasonic), Takuichi Hirano (Tokyo Inst. of Tech.)
Assistant Naoto Sekiya (Univ. of Yamanashi), Satoshi Ono (Univ. of Electro-Comm.)

{INFOMESITEM}
Conference Date Thu, Jan 26, 2017 14:00 - 16:40
Fri, Jan 27, 2017 09:30 - 15:15
Topics Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies 
Conference Place  
Sponsors This conference is technical co-sponsored by IEEE MTT-S Japan Chapter, IEEE MTT-S Kansai Chapter and IEEE MTT-S Nagoya Chapter.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Jan 26 PM 
14:00 - 15:15
(1) 14:00-14:25 [Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications ED2016-96 MW2016-172
Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.)
(2) 14:25-14:50 [Invited Lecture]
Commercialization of GaN-HEMT for High Frequency Application ED2016-97 MW2016-173
Yasunori Tateno (Sumitomo Electric)
(3) 14:50-15:15 [Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs ED2016-98 MW2016-174
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.)
  15:15-15:25 Break ( 10 min. )
Thu, Jan 26 PM 
15:25 - 16:40
(4) 15:25-15:50 [Invited Lecture]
Towards Realization of GaN Vertical Power Devices ED2016-99 MW2016-175
Jun Suda (Kyoto Univ.)
(5) 15:50-16:15 [Invited Lecture]
Current status and problems of epitaxial wafers for GaN electronic devices ED2016-100 MW2016-176
Yohei Otoki (SCIOCS)
(6) 16:15-16:40 [Invited Lecture]
Characterization of Metal/GaN Schottky Contacts
-- Review from the Early Days --
ED2016-101 MW2016-177
Kenji Shiojima (Univ. of Fukui)
Fri, Jan 27 AM 
09:30 - 10:20
(7) 09:30-09:55 Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes ED2016-102 MW2016-178 Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.)
(8) 09:55-10:20 Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks ED2016-103 MW2016-179 Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech)
  10:20-10:30 Break ( 10 min. )
Fri, Jan 27 AM 
10:30 - 11:45
(9) 10:30-10:55 Design of Filtering Antenna with Transmission Zeros Using Cross Coupling Between Antenna and Resonator ED2016-104 MW2016-180 Toshiki Miyazaki, Masataka Ohira, Zhewag Ma, Xiaolong Wang (Saitama Univ.)
(10) 10:55-11:20 Improved Design Method of Dual-Band Bandpass Filters Using Microstrip Composite Resonators ED2016-105 MW2016-181 Ru Zhang, Zhewang Ma, Masataka Ohira, Xiaolong Wan (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.)
(11) 11:20-11:45 An X-band Low Loss/High Power SPST Switch Using GaN on Si ED2016-106 MW2016-182 Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric)
  11:45-13:00 Lunch Break ( 75 min. )
Fri, Jan 27 PM 
13:00 - 13:50
(12) 13:00-13:25 Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates ED2016-107 MW2016-183 Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.)
(13) 13:25-13:50 Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation ED2016-108 MW2016-184 Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.)
  13:50-14:00 Break ( 10 min. )
Fri, Jan 27 PM 
14:00 - 15:15
(14) 14:00-14:25 A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter ED2016-109 MW2016-185 Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.)
(15) 14:25-14:50 C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network ED2016-110 MW2016-186 Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric)
(16) 14:50-15:15 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology ED2016-111 MW2016-187 Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited LectureEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E-: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- : sijaist 
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Naoto Sekiya (Yamanashi Univ.)
TEL: +81-55-220-8393
E-: n
or Junji Sato (Panasonic)
TEL: +81-50-3686-6073, FAX: +81-45-934-8765
E-: ujunpac 


Last modified: 2017-01-26 10:35:23


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