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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)

Technical Committee on Electronic Information Displays (EID) [schedule] [select]
Chair Yuko Kominami (Shizuoka Univ.)
Vice Chair Mutsumi Kimura (Ryukoku Univ.)
Secretary Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.)
Assistant Rumiko Yamaguchi (Akita Univ.), Hiroyuki Nitta (Japan Display), Mitsuru Nakata (NHK), Ryosuke Nonaka (Toshiba), Takeshi Okuno (Huawei), Tomokazu Shiga (Univ. of Electro-Comm.)

Conference Date Fri, Dec 22, 2017 10:30 - 17:00
Topics Si, Si-related materials, device process, electron devices, and display technology 
Conference Place Katsura Campus, Kyoto University 
Contact
Person
Prof. Tsunenobu Kimoto
+81-75-383-2300

Fri, Dec 22 AM 
10:30 - 12:00
(1) 10:30-10:45 Light trapping effect of nanoimprinted texture for thin crystalline silicon solar cell Nakai Yuya, Ishikawa Yasuaki, Uraoka Yukiharu (NAIST)
(2) 10:45-11:00 Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature --
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST)
(3) 11:00-11:15 Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism --
Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST)
(4) 11:15-11:30 Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples --
Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST)
(5) 11:30-11:45 Ultra-high power transistor and thyristor consisting of Si solar cell and LED matrix Kensho Okamoto (Opto Device Lab.)
(6) 11:45-12:00 Wireless power transmission to biological stimulation devices with a thin film coil Keigo Misawa, Keisuke Tomioka, Kouhei Miyake, Mutsumi Kimura (Ryukoku Univ.)
  12:00-13:15 Lunch Break ( 75 min. )
Fri, Dec 22 PM 
13:15 - 15:15
(7) 13:15-13:30 Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.)
(8) 13:30-13:45 Seebeck effect measurement of rare metal free oxide semiconductor Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.)
(9) 13:45-14:00 Three-dimension periodic nano-structure fabricated by proximity nano-patterning process (PnP) Xudongfang Wang, Yasuaki Ishikawa, Shinji Araki, Yukiharu Uraoka (NAIST), Seokwoo Jeon (KAIST)
(10) 14:00-14:15 Brain type integrated system using IGZO thin film as variable resistance element Daiki Yamakawa, Yuki Shibayama, Keisuke Ikushima, Sumio Sugisaki (Ryukoku Univ.), Yoshinori Miyamae (ROHM), Mutsumi Kimura (Ryukoku Univ.)
(11) 14:15-14:30 Cross point synapse using amorphous oxide semiconductor for neurocomputing devices Ryo Tanaka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.)
(12) 14:30-14:45 Simulation of neural network using ferroelectric capacitor Isato Ogawa, Tomoharu Yokoyama, Mutsumi Kimura (Ryukoku Univ.)
(13) 14:45-15:00 Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation Jun Hirade, Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)
(14) 15:00-15:15 Characteristic Evaluation of GaSnO Thin Films deposited using Mist Chemical Vapor Deposition Ryugo Okamoto, Hiroki Fukushima (Ryukoku Univ), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsumi Kimura (Ryukoku Univ)
  15:15-15:30 Break ( 15 min. )
Fri, Dec 22 PM 
15:30 - 17:00
(15) 15:30-15:45 Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.)
(16) 15:45-16:00 Operation verification of Thin-Film Biostimulating Device using Thin-Film Transistors Kohei Miyake, Keisuke Tomioka, Keigo Misawa, Mutsumi kimura (Ryukoku Univ.)
(17) 16:00-16:15 Effect of SiOx capping film on crystallization of Ge film by flash lamp annealing Naoki Yoshioka, Yoshiki Akita, Akira Heya, Naoto Matsuo (Univ of Hyogo), Kazuyuki Kohama, Kazuhiro Itou (Osaka Univ)
(18) 16:15-16:30 Effect of photonic band gap on flash-lamp-annealing crystallization for Islands-shape a-Ge film Naoki Yoshioka, Akira Heya, Naoto Matsuo, Yoshiki Akita (Univ og Hyogo)
(19) 16:30-16:45 Study for hole- or electron- conduction of DNA/Si-MOSFET Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana (Univ. of Hyogo), Tadashi Sato, Shin Yokoyama (Univ. Hiroshima), Omura Yasuhisa (Univ.Kansai)
(20) 16:45-17:00 Analytical study for electric resistance of grafene Naoto Matsuo, Akira Heya (Univ Hyogo)

Announcement for Speakers
General TalkEach speech will have 10 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 
EID Technical Committee on Electronic Information Displays (EID)   [Latest Schedule]
Contact Address  


Last modified: 2017-10-18 12:59:09


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