IEICE Technical Committee Submission System
Advance Program
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top  Go Back   Prev CPM Conf / Next CPM Conf [HTML] / [HTML(simple)] / [TEXT]  [Japanese] / [English] 


Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Mayumi Takeyama (Kitami Inst. of Tech.)
Vice Chair Yuichi Nakamura (Toyohashi Univ. of Tech.)
Secretary Hideki Nakazawa (Hirosaki Univ.)
Assistant Yasuo Kimura (Tokyo Univ. of Tech.), Tomoaki Terasako (Ehime Univ.), Fumihiko Hirose (Yamagata Univ.)

Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Michihiko Suhara (TMU)
Vice Chair Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (Toyama Pref. Univ.)
Assistant Junji Kotani (Fjitsu Lab.), Takuya Tsutsumi (NTT)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Hiroshi Aruga (Mitsubishi Electric)
Vice Chair Hiroshi Yasaka (Tohoku Univ.)
Secretary Yasumasa Kawakita (Furukawa Electric Industries), Masaya Nagai (Osaka Univ.)
Assistant Fumito Nakajima (NTT)

Conference Date Thu, Nov 21, 2019 10:10 - 16:10
Fri, Nov 22, 2019 09:40 - 15:00
Topics Nitride Semiconductor Devices, Materials, Related Technologies 
Conference Place Hamamatsu Campus, Shizuoka Univrsity 
Address 3-5-1 Johoku, Naka-ku, Hamamatsu City
Transportation Guide From Bus Terminal at JR Hamamatsu Station's North Exit, take any bus at Bus Stop No15 or 16 and get off at Shizuoka Daigaku Bus Stop. (approx. 20 min., approx. 10 departures/hour)
www.shizuoka.ac.jp/english/campuslife/campus/hamamatsu/index.html
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on CPM, LQE, ED.

Thu, Nov 21 AM 
10:10 - 12:20
(1) 10:10-10:30 Investigation of flat thin film growth conditions in ALD growth of ZnO ED2019-33 CPM2019-52 LQE2019-76 Ryo Yamamoto, Hiroto Kano, Atsushi Nakamura, Wataru Inami (Shizuoka Univ.)
(2) 10:30-10:50 Optical properties of ZnO crystals grown at high temperature on c c-plane sapphire substrates by mist mist-CVD ED2019-34 CPM2019-53 LQE2019-77 Kosei Ohashi, Kenya Fujiwara, Mikihiro Yamamoto, Kazuhiko Hara (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Tetsuya Kouno (Shizuoka Univ.)
(3) 10:50-11:10 Structural and Photoluminescence Properties of ZnO Nanorods Grown on Various TCO Seed Layers by Chemical Bath Deposition ED2019-35 CPM2019-54 LQE2019-78 Kohdai Hamamoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
(4) 11:10-11:30 Chemical Bath Deposition of ZnO Nanorods on Very Thin GZO Seed Layers and Their Structural and Optical Properties ED2019-36 CPM2019-55 LQE2019-79 Tomoaki Terasako, Kohdai Hamamoto, Kenta Yamada, Shinichiro Kohda (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
  11:30-12:20 Lunch Break ( 50 min. )
Thu, Nov 21 PM 
12:20 - 13:55
(5) 12:20-12:40 Photocatalytic properties of ZnO modified by electrochemical treatment ED2019-37 CPM2019-56 LQE2019-80 Koji Abe, Atsuhito Otake (Nitech)
(6) 12:40-13:00 Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit ED2019-38 CPM2019-57 LQE2019-81 Makoto Hashikawa, Kosuke Urata, Takumi Takenohata, Toshiyuki Oishi, Takayoshi Oshima (Saga Univ.)
(7) 13:00-13:20 Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure ED2019-39 CPM2019-58 LQE2019-82 Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba)
(8) 13:20-13:40 Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE ED2019-40 CPM2019-59 LQE2019-83 Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.)
  13:40-13:55 Break ( 15 min. )
Thu, Nov 21 PM 
13:55 - 15:30
(9) 13:55-14:15 Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD ED2019-41 CPM2019-60 LQE2019-84 Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.)
(10) 14:15-14:35 Fabrication of GaN-QPM crystal using DP-SAG and evaluation of optical characterization for SHG ED2019-42 CPM2019-61 LQE2019-85 Kai Matsuhisa, Yuto Kobayashi, Hiroki Ishihara, Mako Sugiura, Atsushi Sugita, Yoku Inoue, Takayuki Nakano (Shizuoka Univ.)
(11) 14:35-14:55 AlGaN-based electron beam excitation UV lasers using AlGaN well layer ED2019-43 CPM2019-62 LQE2019-86 Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University)
(12) 14:55-15:15 Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD ED2019-44 CPM2019-63 LQE2019-87 Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.)
  15:15-15:30 Break ( 15 min. )
Thu, Nov 21 PM 
15:30 - 16:10
(13) 15:30-15:50 Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN ED2019-45 CPM2019-64 LQE2019-88 Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.)
(14) 15:50-16:10 Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors ED2019-46 CPM2019-65 LQE2019-89 Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.)
Fri, Nov 22 AM 
09:40 - 10:55
(15) 09:40-10:00 Crystallinity evaluation of tin disulfide thin films by direct sulfidation of evaporated tin films ED2019-47 CPM2019-66 LQE2019-90 Yuki Tamura, Atsushi Nakamura (Shizuoka Univ.)
(16) 10:00-10:20 Experimental study on the antireflection nanotexture for organic photovoltaics ED2019-48 CPM2019-67 LQE2019-91 Kenta Hiraga, Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.)
(17) 10:20-10:40 Fabricicate of Fe3O4/PU composites fiber mat by electrospinning method ED2019-49 CPM2019-68 LQE2019-92 Takumi Mori, Atsushi Nakamura (Shizuoka Univ.)
  10:40-10:55 Break ( 15 min. )
Fri, Nov 22 AM 
10:55 - 11:55
(18) 10:55-11:15 Evaluation of electrode surface specificity in pH sensor ED2019-50 CPM2019-69 LQE2019-93 Ryosuke Shinzawa, Atsushi Nakamura (Shizuoka Univ.)
(19) 11:15-11:35 Production of non-enzymatic glucose sensor ED2019-51 CPM2019-70 LQE2019-94 Takahiro Niwa, Atushi Nakamura (Shizuoka Univ)
(20) 11:35-11:55 Fabrication of needle-shaped structure for achievement of LED probe to insert brain for optogenetics ED2019-52 CPM2019-71 LQE2019-95 Yusei Nakayama, Hiroki Yasunaga (Toyohashi Tech), Chihiro Inami, Masahiro Ohsawa (Nagoya City Univ.), Hiroto Sekiguchi (Toyohashi Tech/JST PRESTO)
  11:55-12:45 Lunch Break ( 50 min. )
Fri, Nov 22 PM 
12:45 - 13:45
(21) 12:45-13:05 Progress of UVC-LEDs using DC sputter AlN templates ED2019-53 CPM2019-72 LQE2019-96 Yosuke Mogami (RIKEN/Saitama Univ.), Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka (SCREEN), Yuri Itokazu, Syunsuke Kuwaba (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Hiroyuki Yaguchi (Saitama Univ.), Hideki Hirayama (RIKEN)
(22) 13:05-13:25 Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes ED2019-54 CPM2019-73 LQE2019-97 Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.)
(23) 13:25-13:45 Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer ED2019-55 CPM2019-74 LQE2019-98 Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.)
  13:45-14:00 Break ( 15 min. )
Fri, Nov 22 PM 
14:00 - 15:00
(24) 14:00-14:20 Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells ED2019-56 CPM2019-75 LQE2019-99 Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony)
(25) 14:20-14:40 Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements ED2019-57 CPM2019-76 LQE2019-100 Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY)
(26) 14:40-15:00 Evaluation of III-V nitride by photothermal deflection spectroscopy ED2019-58 CPM2019-77 LQE2019-101 Masatomo Sumiya (NIMS)

Announcement for Speakers
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Tomoaki Terasako (Ehime University)
TEL: +81-89-927-9789 FAX: +81-89-927-9790
E--mail: amze-u 
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E--mail : m
Toshiyuki Oishi(Saga Unv.)
TEL : 0952-28-8642
E--mail :oi104cc-u 
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Yasumasa Kawakita (Furukawa Electric)
TEL +81-45-311-1219
E--mail: electc
Masaya Nagai (Osaka Univ.)
TEL +81-6-6850-6507
E--mail: mimpes-u 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html


Last modified: 2019-11-25 11:30:48


Notification: Mail addresses are partially hidden against SPAM.

[Download Paper's Information (in Japanese)] <-- Press download button after click here.
 
[Cover and Index of IEICE Technical Report by Issue]
 

[Presentation and Participation FAQ] (in Japanese)
 

[Return to ED Schedule Page]   /   [Return to CPM Schedule Page]   /   [Return to LQE Schedule Page]   /  
 
 Go Top  Go Back   Prev CPM Conf / Next CPM Conf [HTML] / [HTML(simple)] / [TEXT]  [Japanese] / [English] 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan