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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Michihiko Suhara (TMU)
Vice Chair Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (Toyama Pref. Univ.)
Assistant Junji Kotani (Fjitsu Lab.), Takuya Tsutsumi (NTT)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Mayumi Takeyama (Kitami Inst. of Tech.)
Vice Chair Yuichi Nakamura (Toyohashi Univ. of Tech.)
Secretary Hideki Nakazawa (Hirosaki Univ.)
Assistant Yasuo Kimura (Tokyo Univ. of Tech.), Tomoaki Terasako (Ehime Univ.), Fumihiko Hirose (Yamagata Univ.)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Hiroshi Aruga (Mitsubishi Electric)
Vice Chair Hiroshi Yasaka (Tohoku Univ.)
Secretary Yasumasa Kawakita (Furukawa Electric Industries), Masaya Nagai (Osaka Univ.)
Assistant Fumito Nakajima (NTT)

Conference Date Thu, Nov 21, 2019 10:10 - 16:10
Fri, Nov 22, 2019 09:40 - 15:00
[updated]
Topics Nitride Semiconductor Devices, Materials, Related Technologies 
Conference Place Hamamatsu Campus, Shizuoka Univrsity 
Address 3-5-1 Johoku, Naka-ku, Hamamatsu City
Transportation Guide From Bus Terminal at JR Hamamatsu Station's North Exit, take any bus at Bus Stop No15 or 16 and get off at Shizuoka Daigaku Bus Stop. (approx. 20 min., approx. 10 departures/hour)
www.shizuoka.ac.jp/english/campuslife/campus/hamamatsu/index.html
Participation Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Participant fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the participant fee page. We request the participant fee to participants who will attend the workshop(s) on CPM, LQE, ED.

Thu, Nov 21 AM 
10:10 - 12:20
(1) 10:10-10:30 Investigation of flat thin film growth conditions in ALD growth of ZnO Ryo Yamamoto, Hiroto Kano, Atsushi Nakamura, Wataru Inami (Shizuoka Univ.)
(2) 10:30-10:50 Optical properties of ZnO crystals grown by a mist CVD techniques with high temperature Kosei Ohashi, Kenya Fujiwara, Mikihiro Yamamoto, Kazuhiko Hara (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Tetsuya Kouno (Shizuoka Univ.)
(3) 10:50-11:10 Structural and Photoluminescence Properties of ZnO Nanorods Grown on Various TCO Layers by Chemical Bath Deposition Kohdai Hamamoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
(4) 11:10-11:30 Chemical Bath Deposition of ZnO Nanorods on Very Thin GZO Seed Layers and Their Structural and Optical Properties Tomoaki Terasako, Kohdai Hamamoto, Kenta Yamada, Shinichiro Kohda (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
  11:30-12:20 Lunch Break ( 50 min. )
Thu, Nov 21 PM 
12:20 - 13:55
(5) 12:20-12:40 Photocatalyst properties of ZnO modified by electrochemical treatment Koji Abe, Atsuhito Otake (Nitech)
(6) 12:40-13:00 Operation and load resistance dependence of RF-DC conversion circuits using Ga2O3 Schottky barrier diodes Makoto Hashikawa, Kosuke Urata, Takumi Takenohata, Kosuke Ajiro, Takayoshi Oshima, Toshiyuki Oishi (Saga Univ.)
(7) 13:00-13:20 Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba)
(8) 13:20-13:40 Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.)
  13:40-13:55 Break ( 15 min. )
Thu, Nov 21 PM 
13:55 - 15:30
(9) 13:55-14:15 Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.)
(10) 14:15-14:35 Fabrication of GaN-QPM crystal using DP-SAG and evaluation of optical characterization for SHG Kai Matsuhisa, Yuto Kobayashi, Hiroki Ishihara, Mako Sugiura, Atsushi Sugita, Yoku Inoue (Shizuoka Univ.), Takayuki Nakano (Shizuoka Univ./R.I.E shizuoka)
(11) 14:35-14:55 AlGaN-based electron beam excitation UV lasers using AlGaN well layer Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University)
(12) 14:55-15:15 Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.)
  15:15-15:30 Break ( 15 min. )
Thu, Nov 21 PM 
15:30 - 16:10 [updated]
(13) 15:30-15:50 Growth, crystall and optical characterization of quaternary AlGaInN epitaxial films nearly lattice-matched to GaN
[updated]
Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.)
(14) 15:50-16:10 Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.)
Fri, Nov 22 AM 
09:40 - 10:55
(15)
[updated]
09:40-10:00 Crystallinity evaluation of tin disulfide thin films by direct sulfidation of evaporated tin films Yuki Tamura, Atsushi Nakamura (Shizuoka Univ.)
(16)
[updated]
10:00-10:20 Experimental study on the antireflection nanotexture for organic photovoltaics Kenta Hiraga, Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.)
(17)
[updated]
10:20-10:40 Compositing for polyurethane fiber mat using electrospinning method Takumi Mori, Atsushi Nakamura (Shizuoka Univ.)
  10:40-10:55 Break ( 15 min. )
Fri, Nov 22 AM 
10:55 - 11:55
(18)
[updated]
10:55-11:15 Evaluation of electrode surface specificity in pH sensor Ryosuke Shinzawa, Atsushi Nakamura (Shizuoka Univ.)
(19)
[updated]
11:15-11:35 * Takahiro Niwa, Atushi Nakamura (Shizuoka Univ)
(20)
[updated]
11:35-11:55 Fabrication of needle-shaped structure for achievement of LED probe to insert brain for optogenetics Yusei Nakayama, Hiroki Yasunaga (Toyohashi Tech), Chihiro Inami, Masahiro Ohsawa (Nagoya City Univ.), Hiroto Sekiguchi (Toyohashi Tech/JST PRESTO)
[updated]
  11:55-12:45 Lunch Break ( 50 min. )
Fri, Nov 22 PM 
12:45 - 13:45 [updated]
(21)
[updated]
12:45-13:05 Progress of UVC-LEDs using DC sputter AlN templates Yosuke Mogami (RIKEN/Saitama Univ.), Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka (SCREEN), Yuri Itokazu (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Hiroyuki Yaguchi (Saitama Univ.), Hideki Hirayama (RIKEN)
(22)
[updated]
13:05-13:25 Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.)
(23)
[updated]
13:25-13:45 Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.)
  13:45-14:00
[updated]
Break ( 15 min. )
Fri, Nov 22 PM 
14:00 - 15:00 [updated]
(24)
[updated]
14:00-14:20
[updated]
Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony)
(25)
[updated]
14:20-14:40
[updated]
Estimation of Internal Quantum Efficiency in InGaN Quantum Wells by Simultaneous Photoacoustic and Photoluminescence Measurements Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY)
[updated]
(26)
[updated]
14:40-15:00
[updated]
Charactrization of III-V nitrides by photothermal deflection spectroscopy Masatomo Sumiya (NIMS)

Announcement for Speakers
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E- : m
Toshiyuki Oishi(Saga Unv.)
TEL : 0952-28-8642
E- :oi104cc-u 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Tomoaki Terasako (Ehime University)
TEL: +81-89-927-9789 FAX: +81-89-927-9790
E-: amze-u 
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Yasumasa Kawakita (Furukawa Electric)
TEL +81-45-311-1219
E-: electc
Masaya Nagai (Osaka Univ.)
TEL +81-6-6850-6507
E-: mimpes-u 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html


Last modified: 2019-11-19 10:54:34


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