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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT)

Conference Date Thu, Nov 12, 2009 10:00 - 16:20
Fri, Nov 13, 2009 10:00 - 16:15
Topics Process, Device, Circuit Simulation, etc. 
Conference Place  
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Thu, Nov 12 AM 
10:00 - 16:20
  10:00-10:10 Introductory talk ( 10 min. )
(1) 10:10-11:00 [Invited Talk]
Low power 3D system integration by inductive coupling communications and its perspective[invited]
Tadahiro Kuroda (Keio Univ.)
(2) 11:00-11:50 [Invited Talk]
Compact MOSFET Model and Its Perspective
-- from bulk-MOSFET to MG-MOSFET --
Mitiko Miura-Mattausch, Masataka Miyake, Koh Johguchi, Shunta Kusu, Kenta Ishimura, Hideyuki Kikuchihara, Feldmann Uwe, Mattausch Hans Juergen (Hiroshima Univ.)
  11:50-13:00 Lunch ( 70 min. )
(3) 13:00-13:40 [Invited Talk]
2009 SISPAD Review SDM2009-136
Katsuhiko Tanaka (MIRAI-Selete)
(4) 13:40-14:20 [Invited Talk]
Report on 2009 SISPAD (2) SDM2009-137
Matsuto Ogawa (Kobe Univ.)
  14:20-14:40 Break ( 20 min. )
(5) 14:40-15:05 Surface-Potential-Based Drain Current Model for Thin-Film Transistors SDM2009-138 Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.)
(6) 15:05-15:30 HiSIM-IGBT: A Compact IGBT Model for Circuit Simulation SDM2009-139 Masataka Miyake, Hiroki Masuoka, Uwe Feldmann, Mitiko Miura-Mattausch (Hiroshima Univ.)
(7) 15:30-15:55 Development of MEMS and Equivalent Circuit Generator SDM2009-140 Nobuyo Fujiwara, Kazuo Asaumi (Mizuho Information & Research Institute), Tomoyuki Koike (Micromachine Center), Toshiyuki Tsuchiya (Kyoto Univ,), Gen Hashiguchi (Shizuoka Univ.)
(8) 15:55-16:20 Device Modeling and Simulation for CMOS Biosensor Applications SDM2009-141 Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.)
Fri, Nov 13 AM 
10:00 - 16:15
(9) 10:00-10:25 Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors SDM2009-142 Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.)
(10) 10:25-10:50 R-matrix method for quantum transport simulation in atomistic modeling SDM2009-143 Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ./JST)
(11) 10:50-11:15 Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation SDM2009-144 Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.)
(12) 11:15-11:40 A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects SDM2009-145 Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.)
  11:40-13:00 Lunch ( 80 min. )
(13) 13:00-13:50 [Tutorial Invited Lecture]
Possible Performance of SOI Devices, their Potentiality and Prospects
-- Past Constraint and Current Issues --
Yasuhisa Omura (Kansai Univ.)
(14) 13:50-14:40 [Invited Talk]
Random Fluctuations in Scaled MOS Devices SDM2009-147
Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.)
  14:40-15:00 Break ( 20 min. )
(15) 15:00-15:25 A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation SDM2009-148 Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete)
(16) 15:25-15:50 Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface SDM2009-149 Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.)
(17) 15:50-16:15 Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network SDM2009-150 Kenji Kawabata, Takashi Ichikawa, Hiroshi Watanabe (Toshiba Corp.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-: HiAniny 

Last modified: 2009-09-28 18:12:05

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