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Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Toshiaki Suhara
Vice Chair Shinji Tsuji
Secretary Atsushi Sugitatsu, Masahiro Aoki
Assistant Tatsuo Hatta

Technical Committee on Electron Device (ED) [schedule] [select]
Chair Takao Waho
Vice Chair Masaaki Kuzuhara
Secretary Tsuyoshi Tanaka, Manabu Arai
Assistant Shin-ichiro Takatani, Koichi Murata

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kiyoshi Ishii
Vice Chair Kiichi Kamimura
Secretary Toru Matsuura, Seiji Toyoda
Assistant Hidehiko Shimizu

Conference Date Thu, Oct 5, 2006 13:00 - 17:00
Fri, Oct 6, 2006 09:30 - 17:15
Topics  
Conference Place  
Contact
Person
075-383-2310

Thu, Oct 5 PM 
13:00 - 17:00
(1) 13:00-13:25 X-band AlGaN/GaN HEMT with over 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.)
(2) 13:25-13:50 Improvement of Breakdown Voltage of AlGaN/GaN HEMT Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna)
(3) 13:50-14:15 RF characteristics of AlGaN/GaN-HEMTs on Si substrates Hideyuki Okita, Juro Mita, Yoshiaki Sano, Toshiharu Marui, Masanori Itoh, Shinichi Hoshi, Fumihiko Toda, Shohei Seki (Oki), Takashi Egawa (NIT)
(4) 14:15-14:40 Study on crystal growth of AlGaN/GaN HEMT on SiC substrate Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.)
(5) 14:40-15:05 GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
  15:05-15:20 Break ( 15 min. )
(6) 15:20-15:45 Interface control for GaN-based electron devices Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University)
(7) 15:45-16:10 Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT)
(8) 16:10-16:35 Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy Kenichi Kosaka, Tatsuya Hujishima (Ritsumeikan Univ.), Kaoru Inoue (FED), Akihiro Hinoki (Ritsumeikan Univ.), Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya (FED), Akira Suzuki (Ritsumeikan Univ./FED), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
(9) 16:35-17:00 Influences of nitrogen plasma on GaN growth on Si substrate by ECR-MBE growth method Tokuo Yodo, Yuki Shiraishi, Kiyotaka Hirata, Hiroyuki Tomita, Norikaki Nishie, Hiroaki Horibe, Keigo Iwata, Yoshiyuki Harada (Osaka Inst. of Tech.)
Fri, Oct 6 AM 
09:30 - 17:15
(10) 09:30-09:55 * Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Ulrich T Schwarz, Harald Braun (Regensburg Univ.), Shinichi Nagahama, Takashi Mukai (Nichia Corp.)
(11) 09:55-10:20 Growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN substrates Masaya Ueda, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia)
(12) 10:20-10:45 Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
  10:45-11:00 Break ( 15 min. )
(13) 11:00-11:25 Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei)
(14) 11:25-11:50 Characteristics of Cathodoluminescence from bulk InGaN microcrystals Hisashi Kanie, Yuji Sema (Tokyo Univ. of Science)
(15) 11:50-12:15 Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba)
  12:15-13:15 Lunch Break ( 60 min. )
(16) 13:15-13:40 Fabrication of GaN-based unipolar UV LEDs grown by MOVPE Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda (Kogakuin Univ.)
(17) 13:40-14:05 Fabrication and Characterization of UV light emitter on various substrates Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko)
(18) 14:05-14:30 GaN films deposited by CS-MBD with pulsed source feeding Masatoshi Arai, Koichi Sugimoto, Shinichi Egawa, Taichi Baba, Masaru Sawada, Tohru Honda (Kogakuin Univ.)
(19) 14:30-14:55 Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda (Matsushita Electric)
(20) 14:55-15:20 GaN/InAlN/GaN Hetero Barrier Varactor Diodes Nobuhisa Tanuma, Minoru Kubota, Munecazu Tacano (Meisei Univ.)
  15:20-15:35 Break ( 15 min. )
(21) 15:35-16:00 Impact of acceptor concentration on electronic properties of n-GaN/p-SiC heterojunction for GaN/SiC heterojunction bipolar transistor Koichi Amari, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(22) 16:00-16:25 Direct nitridation of SiC surface and characterization of nitride layer by XPS Tetsuo Yamaguchi, Yoshiki Ishida, Chen Chen, Masataka Hagihara, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.)
(23) 16:25-16:50 Position and Size Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE Taihei Yamaguchi (Ritsumeikan Univ.), Hiroyuki Naoi (Ritsumeikan univ. COE), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
(24) 16:50-17:15 Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Ryo Nishimoto, Shiro Hidaka, Keita Ishi, Hiroshi Segawa, Junichi Hirakawa, Yoshiyuki Harada (Osaka Inst.of Tech.)

Contact Address and Latest Schedule Information
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Atsushi Sugitatsu (Mitsubishi Electric)
TEL +81-72-780-2653, FAX +81-72-780-3774
E-: SugiAMibiElectc
Masahiro Aoki (Hitachi)
TEL +81-42-323-1111, FAX +81-42-327-7786
E-: aoev 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Tsuyoshi Tanaka(Matsushita)
TEL: 075-956-9083, FAX: 075-956-9110
E-: erlci
Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Yoshitaka Kitamoto (Tokyo Institute of Technology)
TEL 045-924-5424, FAX 045-924-5433
E-: iem

Tohru Matsuura (ATR)
TEL 0774-95-1173, FAX 0774-95-1178
E-: hmatr 


Last modified: 2006-07-27 19:47:08


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