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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tanemasa Asano (Kyushu Univ.)
Vice Chair Toshihiro Sugii (Fujitsu)
Secretary Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant Syunichiro Ohmi (Tokyo Inst. of Tech.)

{INFOMESITEM}
Conference Date Fri, Dec 14, 2007 10:00 - 18:00
Topics Silicon related material, process and device 
Conference Place  
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Fri, Dec 14 AM 
10:00 - 18:00
(1) 10:00-10:20 Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin SDM2007-222 Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST)
(2) 10:20-10:40 Shallow Junction Formed by Rapid Heat Treatment using Semiconductor Laser SDM2007-223 Toshiyuki Sameshima (Tokyo A&T Univ.), Naoki Sano (Hightec Systems Co.), M.Naito (Nissin Ion Equipment Co. Ltd)
(3) 10:40-11:00 Influence of laser-plasma x-ray irradiation on crystallization of a-Si film by excimer laser annealing SDM2007-224 Yasuyuki Takanashi, Naoto Matsuo, Kazuya Uejukkoku, Akira Heya (Dept.Mat.Sci.&Chem.,Univ.Hyogo), Sho Amano, Shuji Miyamoto, Takayasu Mochizuki (LASTI,Univ.Hyogo)
(4) 11:00-11:20 Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation SDM2007-225 Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.)
(5) 11:20-11:40 Electrical conduction characteristics of NiO thin films for ReRAM SDM2007-226 Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(6) 11:40-12:00 Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide (without presentation) Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.)
  12:00-13:00 Break ( 60 min. )
(7) 13:00-13:30 Effective Activation of Phosphorus atom in Si film using ELA SDM2007-227 Takashi Noguchi (Univ. of Ryukyus)
(8) 13:30-13:50 In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing SDM2007-228 Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.)
(9) 13:50-14:10 Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method SDM2007-229 Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.)
(10) 14:10-14:30 Axial orientation of epitaxially grown Fe3Si on Ge(111) SDM2007-230 Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.)
(11) 14:30-14:50 Ge n+/p Junction Formation with Xe+ Preamorphization Implantation Tetuya Fukunaga, Kentaro Shibahara (Hiroshima Univ. Grad. Sch.)
(12) 14:50-15:10 Simulation of light propagation on silicide photonic crystals with conjugated inversion lattices SDM2007-231 Shunsuke Kunimatsu (Kyoto Univ.), Yoshikazu Terai (Osaka Univ.), Yoshihito Maeda (Kyoto Univ.)
(13) 15:10-15:30 Interface modification by NH3 plasma in SiNx passivation for solar cell SDM2007-232 Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST)
  15:30-15:50 Break ( 20 min. )
(14) 15:50-16:20 [Invited Talk]
Optical properties of Si nanocrystals and their possible applications
Minoru Fujii (Kobe Univ.)
(15) 16:20-16:40 Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes SDM2007-233 Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(16) 16:40-17:00 Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs SDM2007-234 Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.)
(17) 17:00-17:20 Neural Network of Device Level using Poly-Si TFT SDM2007-235 Ryo Onodera, Tomohiro Kasakawa, Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.), Hiroyuki Hara, Satoshi Inoue (Seiko Epson Corp.)
(18) 17:20-17:40 Fabrication and Physical Properties of Ferroelectric Thin Films by Alcohol-related Materials SDM2007-236 Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)
(19) 17:40-18:00 Active-Matrix Driving of Magneto Optic Spatial Light Modulator using Poly-Si TFT SDM2007-237 Hideo Oi, Mutsumi Kimura (Ryukoku Univ.), Yoichi Suzuki, Syogo Ishikawa, Hiromitsu Umezawa (FDK), Hiroyuki Takagi, Kim Joo-Young, Hironaga Uchida, Mitsuteru Inoue (Toyohashi Univ.of Tech.)

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E-:etn-u,acmsk 


Last modified: 2007-10-30 12:12:22


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