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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Tamotsu Hashidume (Hokkaido Univ.)
Vice Chair Toru Kaji (Toyota Central R&D Labs.)
Secretary Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)
Assistant Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)

Technical Committee on Microwaves (MW) [schedule] [select]
Chair Kazuhiko Honjo (Univ. of Electro-Comm.)
Vice Chair Takashi Ohira (Toyohashi Univ. of Tech.), Futoshi Kuroki (Kure National College of Tech.)
Secretary Atsushi Sanada (Yamaguchi Univ.), Kazuo Kawabata (Fujitsu Labs.)
Assistant Kei Sato (NTT DoCoMo), Koji Shibata (Hachinohe Inst. of Tech.)

Conference Date Wed, Jan 13, 2010 13:00 - 16:15
Thu, Jan 14, 2010 10:00 - 15:55
Fri, Jan 15, 2010 09:30 - 12:10
Topics  
Conference Place  
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Wed, Jan 13  
13:00 - 16:15
(1) 13:00-13:25 Design of a Compact UWB Bandpass Filter Using a Microstrip Five-Mode Step-Impedance Resonator ED2009-174 MW2009-157 Akihito Beppu, Zhewang Ma (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)
(2) 13:25-13:50 BIT Line Filter Consisting of FR-4 Substrate at 30GHz ED2009-175 MW2009-158 Yusuke Omote, Futoshi Kuroki (KNCT)
(3) 13:50-14:15 Evaluation of the phase disaplacement delta by the complex permittivity measuring with resonators ED2009-176 MW2009-159 Jun-ichi Sugiyama (AIST)
  14:15-14:25 Break ( 10 min. )
(4) 14:25-14:50 Wide-band spurious-response suppression using 4-pole coplanar-waveguide resonator filters ED2009-177 MW2009-160 Takahiro Nagafuku, Hiroyuki Deguchi, Mikio Tsuji (Doshisha Univ.), Hirotaka Fujita (SHARP)
(5) 14:50-15:15 An All-Pass/Capacitive-Coupled BPF MMIC Phase Shifter ED2009-178 MW2009-161 Ryota Komaru, Masatake Hangai, Koichi Shigenaga, Mamiko Yamaguchi, Morishige Hieda (Mitsubishi Electric Corp.)
  15:15-15:25 Break ( 10 min. )
(6) 15:25-15:50 Novel Left-Handed Waveguides ED2009-179 MW2009-162 Hiroaki Ikeuchi, Isao Ohta (Univ. of Hyogo), Mitsuyoshi Kishihara (Okayama Pre. Univ.), Tadashi Kawai (Univ. of Hyogo), Satoshi Matsumoto (Furuno Electric Co. Ltd.)
(7) 15:50-16:15 Analytical and Experimental Considerations on Locking Characteristics of Band-stop Type of Self-injection Locked NRD Guide Gunn Oscillator at 60GHz ED2009-180 MW2009-163 Koichi Oue, Futoshi Kuroki (Kure Nat'l Coll. of Tech.), Tsukasa Yoneyama (Tohoku Inst. of Tech.)
Thu, Jan 14  
10:00 - 15:55
(8) 10:00-10:25 InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric ED2009-181 MW2009-164 Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)
(9) 10:25-10:50 Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density ED2009-182 MW2009-165 Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)
(10) 10:50-11:15 AlGaN/GaN HEMT having periodic mesa-gate structure ED2009-183 MW2009-166 Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
  11:15-13:00 Lunch ( 105 min. )
(11) 13:00-13:40 [Invited Talk]
Development of high-performance ZnO-based FETs
-- Device applications and microwave performance --
ED2009-184 MW2009-167
Shigehiko Sasa, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, Masataka Inoue (Osaka Inst. of Tech.)
(12) 13:40-14:05 Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures ED2009-185 MW2009-168 Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.)
(13) 14:05-14:30 Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs ED2009-186 MW2009-169 Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
  14:30-14:40 Break ( 10 min. )
(14) 14:40-15:05 Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers ED2009-187 MW2009-170 Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.)
(15) 15:05-15:30 AlGaN channel high electron mobility transistors on AlN substrates. ED2009-188 MW2009-171 Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata (SEI), Kenichiro Takeda, Hiroshi Amano (Meijo Univ.)
(16) 15:30-15:55 A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity ED2009-189 MW2009-172 Kazuki Ota, Kazuomi Endo, Yasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Hidenori Shimawaki (NEC Corp.)
Fri, Jan 15  
09:30 - 12:10
(17) 09:30-09:55 A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs ED2009-190 MW2009-173 Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs), Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu)
(18) 09:55-10:20 A 32-GS/s 6-bit Double-Sampling DAC in InP HBT Technology ED2009-191 MW2009-174 Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.)
(19) 10:20-10:45 Pseudo Sinusoidal Generator with PVT Compensation Circuit using InP HBTs
-- For Linear Control of Vector-Sum Phase Shifter --
ED2009-192 MW2009-175
Hideyuki Nosaka, Munehiko Nagatani, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.)
  10:45-10:55 Break ( 10 min. )
(20) 10:55-11:20 A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications ED2009-193 MW2009-176 Kazuya Yamamoto, Atsushi Okamura, Takayuki Matsuzuka, Yutaka Yoshii, Satoshi Suzuki, Masatoshi Nakayama, Teruyuki Shimura, Naohito Yoshida (Mitsubishi Electric Corp.)
(21) 11:20-11:45 An X-band GaN HEMT T/R Switch with 50% Bandwidth ED2009-194 MW2009-177 Masatake Hangai, Yukinobu Tarui, Yoshitaka Kamo, Morishige Hieda (Mitsubishi Electric Corp.)
(22) 11:45-12:10 Cost Effective Wafer-Level Chip Size Package Technology and Application for High Speed Wireless Communications. ED2009-195 MW2009-178 Seiji Fujita, Masaki Imagawa, Tomio Satoh (SEDI), Tsuneo Tokumitsu (SEI), Yuichi Hasegawa (SEDI)

Announcement for Speakers
Invited TalkEach speech will have 35 minutes for presentation and 5 minutes for discussion.
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata(NTT)
TEL:+81-46-240-2871、FAX:+81-46-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- : oba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- : t 
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Kouji Shibata (Hachinohe Institute of Technology)
TEL:0178-25-8271
FAX:0178-25-1430
E-:ba-
or Atsushi Sanada (Yamaguchi University)
E-:asgu-u 


Last modified: 2009-11-18 16:38:04


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