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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Technical Committee on Organic Molecular Electronics (OME) [schedule] [select]
Chair Naoki Matsuda (AIST)
Vice Chair Tatsuo Mori (Aichi Inst. of Tech.)
Secretary Akihiro Kohno (NTT), Takao Someya (Univ. of Tokyo)
Assistant Hirotake Kajii (Osaka Univ.), Dai Taguchi (Tokyo Inst. of Tech.)

Conference Date Fri, Apr 8, 2016 10:55 - 17:40
Sat, Apr 9, 2016 09:30 - 12:30
Topics Thin film devices, etc 
Conference Place Okinawa Prefectural Museum & Art Museum, Museum Lecture Room 
Address 3-1-1 Omoromachi, Naha City, Okinawa 900-0006
Transportation Guide By monorail: 10-minute walk from Omoromachi Station
http://www.museums.pref.okinawa.jp/english/visitors/index.html
Contact
Person
Taizoh Sadoh, Kyushu University
+81-92-802-3737
Copyright
and
reproduction
以下の論文すべての著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Fri, Apr 8  
10:55 - 17:40
(1) 10:55-11:20 Effect of surface modification on immobilization and direct electron transfer reaction of cytochrome c on solid/liquid interfaces SDM2016-1 OME2016-1 Naoki Matsuda, Hirotaka Okabe (AIST)
(2) 11:20-12:00 [Invited Talk]
Effect of MoO3 Cathode Buffer on the Performance of Organic Solar Cells SDM2016-2 OME2016-2
Hiroshi Kageyama, Shotaro Hayashi, Daichi Hasebe, Iwamichi Ishikawa, Yusuke Nakamoto (Univ. of the Ryukyus), Taichiro Morimune (Natl. Inst. Technol., Kagewa College)
(3) 12:00-12:40 [Invited Talk]
OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer SDM2016-3 OME2016-3
Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech)
  12:40-13:40 Break ( 60 min. )
(4) 13:40-14:20 [Invited Talk]
Blockade and Staircase Phenomena of Holes in Mesoscopic Scale λ-Deoxyribonucleic Acid (DNA)/SiO2/Si Structure SDM2016-4 OME2016-4
Naoto Matsuo, Tadao Takada, Akira Heya, Kazushuge Yamana (Univ Hyogo), Tadashi Sato, Shin Yokoyama (Hirosima Univ), Yasuhisa Omura (Kansai Univ)
(5) 14:20-15:00 [Invited Talk]
Growth and characterization of Sn-containing group-IV semiconductor thin film SDM2016-5 OME2016-5
Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
(6) 15:00-15:25 Formation of GeSn Thin-Film-Crystals with high Sn concentration (>10%) on insulator SDM2016-6 OME2016-6 Kenta Moto, Ryo Matsumura, Taizo Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.)
  15:25-15:35 Break ( 10 min. )
(7) 15:35-16:00 Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization SDM2016-7 OME2016-7 Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
(8) 16:00-16:25 Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate SDM2016-8 OME2016-8 Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto)
(9) 16:25-16:50 Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. SDM2016-9 OME2016-9 Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.)
(10) 16:50-17:15 Multi-shots ELA of sputtered Si film and TFT with metal source-drain structure SDM2016-10 OME2016-10 Taisei Harada, Futa Gakiya, Takuya Ashitomi, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Kanji Noda, Akira Suwa (GiGAPHOTON Inc.), Hiroshi Ikenoue (Kyusyu Univ.), Tetsuo Okuyama (TOYOBO Company, Limited)
(11) 17:15-17:40 High Photoconductive Silicon Thin-film formed by Blue Laser Diode Annealing for System on Panel SDM2016-11 OME2016-11 Koswaththage Charith Jayanada, Kota Nakao, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus)
Sat, Apr 9  
09:30 - 12:30
(12) 09:30-10:10 [Invited Talk]
Nonvolatile Memory Applications Using Oxide Thin-Film Transistors SDM2016-12 OME2016-12
Sung-Min Yoon, So-Jung Kim, Min-Ji Park, Da-Jeong Yun (Kyung Hee Univ.)
(13) 10:10-10:50 [Invited Talk]
Low-temperature processed self-aligned InGaZnO thin-film transistors for flexible device applications SDM2016-13 OME2016-13
Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari (Kochi Univ. of Technol.)
(14) 10:50-11:15 Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region --
SDM2016-14 OME2016-14
Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT)
(15) 11:15-11:40 Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack SDM2016-15 OME2016-15 Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.)
(16) 11:40-12:05 Effect of Low Temperature Annealing of Sputtered SiO2 for Gate Insulator in Poly-Si TFTs SDM2016-16 OME2016-16 Hikaru Tamashiro, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi (Univ. Ryukyu)
(17) 12:05-12:30 An Application of Green Laser Annealing in Low-Voltage Power MOSFETs SDM2016-17 OME2016-17 Yi Chen, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 30 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Taizoh SADOH (Kyushu Univ.)
Tel 092-802-3737 Fax 092-802-3724
E-: hedkshu-u 
OME Technical Committee on Organic Molecular Electronics (OME)   [Latest Schedule]
Contact Address  


Last modified: 2016-03-04 12:12:01


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