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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2010)

Search Results: Keywords 'from:2010-11-11 to:2010-11-11'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 14 of 14  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2010-11-11
10:05
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] 2010 SISPAD Review
Yoshinari Kamakura (Osaka Univ.) SDM2010-171
The 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) was held on Septemb... [more] SDM2010-171
pp.1-4
SDM 2010-11-11
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Latest Trends in Simulation and Characterization of Statistical CMOS Variability and Reliability -- Review of 2010 SISPAD Workshop1 --
Shuichi Toriyama (Toshiba Corp.) SDM2010-172
A workshop entitled "Simulation and Characterization of Statistical CMOS Variability and Reliability" was held on Septem... [more] SDM2010-172
pp.5-10
SDM 2010-11-11
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory
Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.) SDM2010-173
A MLC (Multi-level cell) SPRAM (Spin transfer torque RAM) with series-stacked MTJs (Magneto tunnel junctions) was develo... [more] SDM2010-173
pp.11-15
SDM 2010-11-11
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Statistical Evaluation of Random Telegraph Sygnal in MOSFET
Akinobu Teramoto, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-174
Important parameters of Random Telegraph Signal (RTS) in MOSFET, such as amplitude, time constant vary very much. For ev... [more] SDM2010-174
pp.17-22
SDM 2010-11-11
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] SDM2010-175
pp.23-28
SDM 2010-11-12
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. High Transient Performance of Low-Dropout(LDO) regulator
Fouzhiwei Tong, Cong-Kha Pham (UEC) SDM2010-176
recently,the performance of the mobile device,such as cell phone and notebook,is speeding up and the low power consumpti... [more] SDM2010-176
pp.29-33
SDM 2010-11-12
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. Topography simulation of BiCS memory hole etching and modeling of SiO2 and Si etching
Takashi Ichikawa, Daigo Ichinose, Kenji Kawabata, Naoki Tamaoki (Toshiba) SDM2010-177
A topography simulation of BiCS memory hole etching is performed. The model parameters are fitted by elementary experime... [more] SDM2010-177
pp.35-39
SDM 2010-11-12
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Oxidation Simulation of Silicon Surface
Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku) SDM2010-178
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] SDM2010-178
pp.41-43
SDM 2010-11-12
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] An overview of VLSI design automation and its future prospective
Atsushi Takahashi (Osaka Univ.) SDM2010-179
Due to the continuous progress of VLSI manufacturing technology, the size of an element in VLSI becomes smaller and smal... [more] SDM2010-179
pp.45-46
SDM 2010-11-12
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of Single-Event-Transient Pulse Generation in Inverter Cells
Katsuhiko Tanaka, Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete) SDM2010-180
Soft errors in logic circuits due to the propagation of erroneous signal caused by ionized particle generated by cosmic ... [more] SDM2010-180
pp.47-52
SDM 2010-11-12
14:15
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs
Akihiro Tanaka, Yasunori Oritsuki, Hideyuki Kikuchihara, Masataka Miyake, Hans Juergen Mattausch, Mitiko Miura-Mattausch (Hiroshima Univ.), Yong Liu, Keith Green (TI) SDM2010-181
High-voltage MOSFETs have been applied in a wide range of bias voltages from a few volts up to several hundred volts by ... [more] SDM2010-181
pp.53-57
SDM 2010-11-12
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. Proposal of a Fitting Accuracy Metric suitable for Compact Model Qualification in all MOSFET Operation Region
Hironori Sakamoto, Takahiro Iizuka (Renesas Electronics) SDM2010-182
Proposed is a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions. Fitting ... [more] SDM2010-182
pp.59-64
SDM 2010-11-12
15:05
Tokyo Kikai-Shinko-Kaikan Bldg. Strain Dependence of Hole Currents in Silicon Nanowire FETs
Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183
Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed fo... [more] SDM2010-183
pp.65-69
SDM 2010-11-12
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. Design Feasibility of Si Wire GAA MOSFET -- Analytical model for the design guideline --
Shunsuke Nakano, Yasuhisa Omura (Kansai Univ.) SDM2010-184
This paper proposes a simple model to examine the design feasibility of Si wire gate-all-around (GAA) metal-oxide-semico... [more] SDM2010-184
pp.71-76
 Results 1 - 14 of 14  /   
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