Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2010-11-11 10:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
2010 SISPAD Review Yoshinari Kamakura (Osaka Univ.) SDM2010-171 |
The 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) was held on Septemb... [more] |
SDM2010-171 pp.1-4 |
SDM |
2010-11-11 10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Latest Trends in Simulation and Characterization of Statistical CMOS Variability and Reliability
-- Review of 2010 SISPAD Workshop1 -- Shuichi Toriyama (Toshiba Corp.) SDM2010-172 |
A workshop entitled "Simulation and Characterization of Statistical CMOS Variability and Reliability" was held on Septem... [more] |
SDM2010-172 pp.5-10 |
SDM |
2010-11-11 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.) SDM2010-173 |
A MLC (Multi-level cell) SPRAM (Spin transfer torque RAM) with series-stacked MTJs (Magneto tunnel junctions) was develo... [more] |
SDM2010-173 pp.11-15 |
SDM |
2010-11-11 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Statistical Evaluation of Random Telegraph Sygnal in MOSFET Akinobu Teramoto, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-174 |
Important parameters of Random Telegraph Signal (RTS) in MOSFET, such as amplitude, time constant vary very much. For ev... [more] |
SDM2010-174 pp.17-22 |
SDM |
2010-11-11 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] |
SDM2010-175 pp.23-28 |
SDM |
2010-11-12 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High Transient Performance of Low-Dropout(LDO) regulator Fouzhiwei Tong, Cong-Kha Pham (UEC) SDM2010-176 |
recently,the performance of the mobile device,such as cell phone and notebook,is speeding up and the low power consumpti... [more] |
SDM2010-176 pp.29-33 |
SDM |
2010-11-12 10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Topography simulation of BiCS memory hole etching and modeling of SiO2 and Si etching Takashi Ichikawa, Daigo Ichinose, Kenji Kawabata, Naoki Tamaoki (Toshiba) SDM2010-177 |
A topography simulation of BiCS memory hole etching is performed. The model parameters are fitted by elementary experime... [more] |
SDM2010-177 pp.35-39 |
SDM |
2010-11-12 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Oxidation Simulation of Silicon Surface Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku) SDM2010-178 |
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] |
SDM2010-178 pp.41-43 |
SDM |
2010-11-12 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
An overview of VLSI design automation and its future prospective Atsushi Takahashi (Osaka Univ.) SDM2010-179 |
Due to the continuous progress of VLSI manufacturing technology, the size of an element in VLSI becomes smaller and smal... [more] |
SDM2010-179 pp.45-46 |
SDM |
2010-11-12 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Modeling of Single-Event-Transient Pulse Generation in Inverter Cells Katsuhiko Tanaka, Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete) SDM2010-180 |
Soft errors in logic circuits due to the propagation of erroneous signal caused by ionized particle generated by cosmic ... [more] |
SDM2010-180 pp.47-52 |
SDM |
2010-11-12 14:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs Akihiro Tanaka, Yasunori Oritsuki, Hideyuki Kikuchihara, Masataka Miyake, Hans Juergen Mattausch, Mitiko Miura-Mattausch (Hiroshima Univ.), Yong Liu, Keith Green (TI) SDM2010-181 |
High-voltage MOSFETs have been applied in a wide range of bias voltages from a few volts up to several hundred volts by ... [more] |
SDM2010-181 pp.53-57 |
SDM |
2010-11-12 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Proposal of a Fitting Accuracy Metric suitable for Compact Model Qualification in all MOSFET Operation Region Hironori Sakamoto, Takahiro Iizuka (Renesas Electronics) SDM2010-182 |
Proposed is a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions. Fitting ... [more] |
SDM2010-182 pp.59-64 |
SDM |
2010-11-12 15:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Strain Dependence of Hole Currents in Silicon Nanowire FETs Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183 |
Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed fo... [more] |
SDM2010-183 pp.65-69 |
SDM |
2010-11-12 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Design Feasibility of Si Wire GAA MOSFET
-- Analytical model for the design guideline -- Shunsuke Nakano, Yasuhisa Omura (Kansai Univ.) SDM2010-184 |
This paper proposes a simple model to examine the design feasibility of Si wire gate-all-around (GAA) metal-oxide-semico... [more] |
SDM2010-184 pp.71-76 |