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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2008)

Search Results: Keywords 'from:2008-07-09 to:2008-07-09'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 76  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2008-07-09
10:00
Hokkaido Kaderu2・7 [Keynote Address] III-V Semiconductor Epitaxial Nanowires and Their Applications
Takashi Fukui, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa (Hokkaido Univ.) ED2008-39 SDM2008-58
 [more] ED2008-39 SDM2008-58
p.1
SDM, ED 2008-07-09
10:50
Hokkaido Kaderu2・7 [Invited Talk] Growth of InAs quantum dot and device application
Il-Ki Han (KIST)
 [more]
SDM, ED 2008-07-09
11:15
Hokkaido Kaderu2・7 [Invited Talk] Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration
Toshi-kazu Suzuki (JAIST) ED2008-40 SDM2008-59
Narrow-gap III-V semiconductors, such as InAs, InGaAs/InAlAs with high indium compositions, InSb,
and InGaSb/InAlSb, ar... [more]
ED2008-40 SDM2008-59
pp.3-8
SDM, ED 2008-07-09
11:40
Hokkaido Kaderu2・7 [Invited Talk] AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer
Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] ED2008-41 SDM2008-60
pp.9-14
SDM, ED 2008-07-09
12:05
Hokkaido Kaderu2・7 Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition
Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61
Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethyla... [more] ED2008-42 SDM2008-61
pp.15-19
SDM, ED 2008-07-09
13:20
Hokkaido Kaderu2・7 [Invited Talk] Guidelines for the Threshold Voltage Control of Metal/HfSiON system
Akira Nishiyama, Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Junji Koga, Masato Koyama (Toshiba) ED2008-43 SDM2008-62
 [more] ED2008-43 SDM2008-62
pp.21-24
SDM, ED 2008-07-09
13:45
Hokkaido Kaderu2・7 [Invited Talk] Precise Ion Implantation for Advanced MOS LSIs
Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63
Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted i... [more] ED2008-44 SDM2008-63
pp.25-30
SDM, ED 2008-07-09
14:10
Hokkaido Kaderu2・7 [Invited Talk] Quantum Modeling of Carrier Transport through Silicon Nano-devices
Nobuya Mori, Hideki Minari (Osaka Univ.) ED2008-45 SDM2008-64
 [more] ED2008-45 SDM2008-64
pp.31-36
SDM, ED 2008-07-09
14:35
Hokkaido Kaderu2・7 [Invited Talk] High-K Dielectric for Charge Trap-type Flash Memory Application
Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore) ED2008-46 SDM2008-65
In this paper, lanthanide group oxides, AlLaOx, HfLaOx, Gd2O3 and GdAlO3, used as blocking oxide in charge trap - type F... [more] ED2008-46 SDM2008-65
pp.37-41
SDM, ED 2008-07-09
15:00
Hokkaido Kaderu2・7 Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors
Han-A Jung, Ki-Heung Park (Kyungpook National Univ.), Hyuck-In Kwon (Daegu Univ. Jillyang), Jong-Ho Lee (Kyungpook National Univ.) ED2008-47 SDM2008-66
 [more] ED2008-47 SDM2008-66
pp.43-46
SDM, ED 2008-07-09
15:15
Hokkaido Kaderu2・7 A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation
Hiroshi Imai (Tohoku Univ.), Masahiko Sugimura, Masafumi Kawasaki (Zeon), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2008-48 SDM2008-67
 [more] ED2008-48 SDM2008-67
pp.47-51
SDM, ED 2008-07-09
15:30
Hokkaido Kaderu2・7 CMOS phase shift Oscillator Using the Conduction of Heat
Takaaki Hirai, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.) ED2008-86 SDM2008-105
We propose a CMOS phase-shift oscillator that makes use of a phase shift in the conduction of heat. The oscillator consi... [more] ED2008-86 SDM2008-105
pp.249-252
SDM, ED 2008-07-09
15:55
Hokkaido Kaderu2・7 [Invited Talk] Characterization of Carbon Nanotube FETs by Electric Force Microscopy
Takashi Mizutani (Nagoya Univ.) ED2008-49 SDM2008-68
 [more] ED2008-49 SDM2008-68
pp.53-58
SDM, ED 2008-07-09
16:20
Hokkaido Kaderu2・7 [Invited Talk] Recent Progress on Nanoprobe and Nanoneedle
Masaki Tanemura, Masashi Kitazawa, Yoshitaka Sugita, Ako Miyawaki, Masaki Kutsuna, Yasuhiko Hayashi (Nagoya Inst. of Tech.), Shu Ping Lau (Nanyang Tech. Univ.) ED2008-50 SDM2008-69
Ar+ ion bombardment of carbon surfaces (both bulk carbon and carbon-coated substrates) induced the growth of conical pro... [more] ED2008-50 SDM2008-69
pp.59-64
SDM, ED 2008-07-09
16:45
Hokkaido Kaderu2・7 [Invited Talk] Technical Issues and Applications of Printed Thin-Film Devices
Yongtaek Hong, Jaewook Jeong, Jinwoo Kim, Sanbwoo Kim, Minkyoo Kwon, Seungjun Chung (Seoul National Univ.) ED2008-51 SDM2008-70
 [more] ED2008-51 SDM2008-70
pp.65-68
SDM, ED 2008-07-09
17:10
Hokkaido Kaderu2・7 [Invited Talk] A Ta2O5 Solid-electrolyte Switch with Improved Reliability
Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Shinji Fujieda (NEC Corp.), Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono (NIMS) ED2008-52 SDM2008-71
We present a novel solid-electrolyte switch (”NanoBridge”) promising for application to field programmable gate array (F... [more] ED2008-52 SDM2008-71
pp.69-72
SDM, ED 2008-07-09
17:35
Hokkaido Kaderu2・7 Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation
Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-53 SDM2008-72
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operati... [more] ED2008-53 SDM2008-72
pp.73-76
SDM, ED 2008-07-10
09:00
Hokkaido Kaderu2・7 Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.) ED2008-54 SDM2008-73
We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at ... [more] ED2008-54 SDM2008-73
pp.77-80
SDM, ED 2008-07-10
09:15
Hokkaido Kaderu2・7 Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories
Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.) ED2008-55 SDM2008-74
This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calcu... [more] ED2008-55 SDM2008-74
pp.81-84
SDM, ED 2008-07-10
09:30
Hokkaido Kaderu2・7 3-dimensional Terraced NAND(3D TNAND) Flash Memory
Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enoug... [more] ED2008-56 SDM2008-75
pp.85-88
 Results 1 - 20 of 76  /  [Next]  
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