Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED |
2008-07-09 10:00 |
Hokkaido |
Kaderu2・7 |
[Keynote Address]
III-V Semiconductor Epitaxial Nanowires and Their Applications Takashi Fukui, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa (Hokkaido Univ.) ED2008-39 SDM2008-58 |
[more] |
ED2008-39 SDM2008-58 p.1 |
SDM, ED |
2008-07-09 10:50 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Growth of InAs quantum dot and device application Il-Ki Han (KIST) |
[more] |
|
SDM, ED |
2008-07-09 11:15 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration Toshi-kazu Suzuki (JAIST) ED2008-40 SDM2008-59 |
Narrow-gap III-V semiconductors, such as InAs, InGaAs/InAlAs with high indium compositions, InSb,
and InGaSb/InAlSb, ar... [more] |
ED2008-40 SDM2008-59 pp.3-8 |
SDM, ED |
2008-07-09 11:40 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] |
ED2008-41 SDM2008-60 pp.9-14 |
SDM, ED |
2008-07-09 12:05 |
Hokkaido |
Kaderu2・7 |
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61 |
Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethyla... [more] |
ED2008-42 SDM2008-61 pp.15-19 |
SDM, ED |
2008-07-09 13:20 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Guidelines for the Threshold Voltage Control of Metal/HfSiON system Akira Nishiyama, Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Junji Koga, Masato Koyama (Toshiba) ED2008-43 SDM2008-62 |
[more] |
ED2008-43 SDM2008-62 pp.21-24 |
SDM, ED |
2008-07-09 13:45 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Precise Ion Implantation for Advanced MOS LSIs Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63 |
Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted i... [more] |
ED2008-44 SDM2008-63 pp.25-30 |
SDM, ED |
2008-07-09 14:10 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Quantum Modeling of Carrier Transport through Silicon Nano-devices Nobuya Mori, Hideki Minari (Osaka Univ.) ED2008-45 SDM2008-64 |
[more] |
ED2008-45 SDM2008-64 pp.31-36 |
SDM, ED |
2008-07-09 14:35 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
High-K Dielectric for Charge Trap-type Flash Memory Application Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore) ED2008-46 SDM2008-65 |
In this paper, lanthanide group oxides, AlLaOx, HfLaOx, Gd2O3 and GdAlO3, used as blocking oxide in charge trap - type F... [more] |
ED2008-46 SDM2008-65 pp.37-41 |
SDM, ED |
2008-07-09 15:00 |
Hokkaido |
Kaderu2・7 |
Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors Han-A Jung, Ki-Heung Park (Kyungpook National Univ.), Hyuck-In Kwon (Daegu Univ. Jillyang), Jong-Ho Lee (Kyungpook National Univ.) ED2008-47 SDM2008-66 |
[more] |
ED2008-47 SDM2008-66 pp.43-46 |
SDM, ED |
2008-07-09 15:15 |
Hokkaido |
Kaderu2・7 |
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation Hiroshi Imai (Tohoku Univ.), Masahiko Sugimura, Masafumi Kawasaki (Zeon), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2008-48 SDM2008-67 |
[more] |
ED2008-48 SDM2008-67 pp.47-51 |
SDM, ED |
2008-07-09 15:30 |
Hokkaido |
Kaderu2・7 |
CMOS phase shift Oscillator Using the Conduction of Heat Takaaki Hirai, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.) ED2008-86 SDM2008-105 |
We propose a CMOS phase-shift oscillator that makes use of a phase shift in the conduction of heat. The oscillator consi... [more] |
ED2008-86 SDM2008-105 pp.249-252 |
SDM, ED |
2008-07-09 15:55 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Characterization of Carbon Nanotube FETs by Electric Force Microscopy Takashi Mizutani (Nagoya Univ.) ED2008-49 SDM2008-68 |
[more] |
ED2008-49 SDM2008-68 pp.53-58 |
SDM, ED |
2008-07-09 16:20 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Recent Progress on Nanoprobe and Nanoneedle Masaki Tanemura, Masashi Kitazawa, Yoshitaka Sugita, Ako Miyawaki, Masaki Kutsuna, Yasuhiko Hayashi (Nagoya Inst. of Tech.), Shu Ping Lau (Nanyang Tech. Univ.) ED2008-50 SDM2008-69 |
Ar+ ion bombardment of carbon surfaces (both bulk carbon and carbon-coated substrates) induced the growth of conical pro... [more] |
ED2008-50 SDM2008-69 pp.59-64 |
SDM, ED |
2008-07-09 16:45 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Technical Issues and Applications of Printed Thin-Film Devices Yongtaek Hong, Jaewook Jeong, Jinwoo Kim, Sanbwoo Kim, Minkyoo Kwon, Seungjun Chung (Seoul National Univ.) ED2008-51 SDM2008-70 |
[more] |
ED2008-51 SDM2008-70 pp.65-68 |
SDM, ED |
2008-07-09 17:10 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
A Ta2O5 Solid-electrolyte Switch with Improved Reliability Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Shinji Fujieda (NEC Corp.), Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono (NIMS) ED2008-52 SDM2008-71 |
We present a novel solid-electrolyte switch (”NanoBridge”) promising for application to field programmable gate array (F... [more] |
ED2008-52 SDM2008-71 pp.69-72 |
SDM, ED |
2008-07-09 17:35 |
Hokkaido |
Kaderu2・7 |
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-53 SDM2008-72 |
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operati... [more] |
ED2008-53 SDM2008-72 pp.73-76 |
SDM, ED |
2008-07-10 09:00 |
Hokkaido |
Kaderu2・7 |
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.) ED2008-54 SDM2008-73 |
We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at ... [more] |
ED2008-54 SDM2008-73 pp.77-80 |
SDM, ED |
2008-07-10 09:15 |
Hokkaido |
Kaderu2・7 |
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.) ED2008-55 SDM2008-74 |
This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calcu... [more] |
ED2008-55 SDM2008-74 pp.81-84 |
SDM, ED |
2008-07-10 09:30 |
Hokkaido |
Kaderu2・7 |
3-dimensional Terraced NAND(3D TNAND) Flash Memory Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75 |
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enoug... [more] |
ED2008-56 SDM2008-75 pp.85-88 |