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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2007)
Search Results: Keywords 'from:2007-06-07 to:2007-06-07'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2007-06-07 13:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba)  SDM2007-31 |
For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we... [more] | SDM2007-31 pp.1-6 |
| SDM | 2007-06-07 13:55 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films Toshiyuki Mine, Takeshi Ishida, Hirotaka Hamamura, Kazuyoshi Torii (Hitachi) SDM2007-32 |
For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we... [more] | SDM2007-32 pp.7-11 |
| SDM | 2007-06-07 14:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Measurement Technique of Carrier Mobility in Silicon Nitride and its Application to Data Retention in MONOS Memories Kozo Katayama, Kiyoshi Ishikawa (Renesas) SDM2007-33 |
[more] | SDM2007-33 pp.13-16 |
| SDM | 2007-06-07 14:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL) SDM2007-34 |
The depth profiling of chemical composition and defect state density in tensile- and compressive-SiNx films formed on ch... [more] | SDM2007-34 pp.17-22 |
| SDM | 2007-06-07 15:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2 Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba) SDM2007-35 |
The use of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect-transistors (MOSFE... [more] | SDM2007-35 pp.23-26 |
| SDM | 2007-06-07 15:55 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Statistical Evaluation of Localized Low Gate Current through Tunnel Dielectric using Integrated Array TEG Yuki Kumagai, Akinobu Teramoto, Shigetoshi Sugawa, Tomoyuki Suwa, Tadahiro Ohmi (Tohoku Univ.) SDM2007-36 |
[more] | SDM2007-36 pp.27-32 |
| SDM | 2007-06-07 16:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Workfunction Tuning of B Doped Fully-Silicided Pd2Si Gate Hiroyuki Shiraishi, Takuji Hosoi, Akio Ohta, Seiichi Miyazaki, Kentaro Shibahara (Hiroshima Univ.) SDM2007-37 |
[more] | SDM2007-37 pp.33-36 |
| SDM | 2007-06-07 16:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-38 |
High-pressure H2O vapor annealing was performed for 4H-SiC MOS structures to modify interface properties and MOSFET perf... [more] | SDM2007-38 pp.37-42 |
| SDM | 2007-06-08 09:00 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2007-39 |
An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microw... [more] | SDM2007-39 pp.43-48 |
| SDM | 2007-06-08 09:25 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs Masayuki Terai, Shinji Fujieda (NEC) SDM2007-40 |
The effects of plasma nitridation and fluorine incorporation on the components of negative-bias temperature instability ... [more] | SDM2007-40 pp.49-54 |
| SDM | 2007-06-08 09:50 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Modeling of NBTI Degradation for SiON pMOSFET Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41 |
For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] | SDM2007-41 pp.55-58 |
| SDM | 2007-06-08 10:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42 |
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] | SDM2007-42 pp.59-64 |
| SDM | 2007-06-08 10:55 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2 Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba) SDM2007-43 |
By controlling atomic arrangement of La aluminates (LAO, EOT scalable below 0.5 nm)/Si interface with a newly developed ... [more] | SDM2007-43 pp.65-70 |
| SDM | 2007-06-08 11:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] | SDM2007-44 pp.71-74 |
| SDM | 2007-06-08 12:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics. Masamichi Suzuki, Yoshinori Tsuchiya, Masato Koyama (Toshiba) SDM2007-45 |
The effective work functions (Φeff ) of various metals on LaAlO3 were systematically investigated. Contrary to the case ... [more] | SDM2007-45 pp.75-80 |
| SDM | 2007-06-08 13:10 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Electrical Properties of Al2O3 Thin Films Prepared by RF Magnetron Sputtering Method Yutaka Nishioka, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu (ULVAC) SDM2007-46 |
We prepared the LaAlO3 thin films by RF magnetron sputtering on 8ich p-Si(100) substrate for High-k gate insulator. Afte... [more] | SDM2007-46 pp.81-83 |
| SDM | 2007-06-08 13:35 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices Koji Kita, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi (Univ.of Tokyo) SDM2007-47 |
The impact of high-k material selection on the electrical characteristics of high-k/Ge MIS capacitors was investigated. ... [more] | SDM2007-47 pp.85-90 |
| SDM | 2007-06-08 14:15 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-48 |
~2.7nm-thick HfO2 films were formed by electron beam (EB) evaporation in O2 ambience on ultrathin SiONx/Ge(100) stack st... [more] | SDM2007-48 pp.91-96 |
| SDM | 2007-06-08 14:40 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Formation and characterization of Ge$_3$N$_4$ thin layers Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.) SDM2007-49 |
We have investigated the nitridation of germanium substrate by our original high-density plasma source. Pure amorphous G... [more] | SDM2007-49 pp.97-100 |
| SDM | 2007-06-08 15:05 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Characteristics of HfO2/Ge-nitride/Ge MIS structures Tatsuro Maeda, Yukinori Morita, Masayasu Nishizawa (AIST), Shinichi Takagi (AIST/Univ. of Tokyo) SDM2007-50 |
[more] | SDM2007-50 pp.101-106 |
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