ken-system: - Silicon Device and Materials (SDM)

IEICE Technical Committee Submission System
Conference Schedule

Online Proceedings
[Sign in]
Tech. Rep. Archives

[Japanese] / [English]

(

Committee/Place/Topics

) --Press->

(

Paper Keywords: / Column:Title Auth. Affi. Abst. Keyword

) --Press->

Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2018)

Search Results: Keywords 'from:2019-01-29 to:2019-01-29'

[Go to Official SDM Homepage (Japanese)]

Search Results: Conference Papers

Conference Papers (Available on Advance Programs) (Sort by: Date Ascending)

Committee	Date Time	Place		Paper Title / Authors	Abstract	Paper #
SDM	2019-01-29 09:30	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81	In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more]	SDM2018-81 pp.1-4
SDM	2019-01-29 09:55	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82	Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more]	SDM2018-82 pp.5-8
SDM	2019-01-29 10:20	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor Li Xiuyan, Akira Toriumi (Univ. of Tokyo) SDM2018-83	[more]	SDM2018-83 pp.9-12
SDM	2019-01-29 11:00	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84	We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold char... [more]	SDM2018-84 pp.13-16
SDM	2019-01-29 11:25	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-85	[more]	SDM2018-85 pp.17-20
SDM	2019-01-29 13:20	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas) SDM2018-86	Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping techniq... [more]	SDM2018-86 pp.21-26
SDM	2019-01-29 13:45	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87	We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more]	SDM2018-87 pp.27-30
SDM	2019-01-29 14:10	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process Hideo Sato, Tetsuo Endoh (Tohoku Univ.)	[more]
SDM	2019-01-29 14:50	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Half pitch 14 nm direct pattering with Nanoimprint lithography Tetsuro Nakasugi (Toshiba Memory Corp.) SDM2018-88	(To be available after the conference date) [more]	SDM2018-88 pp.31-34
SDM	2019-01-29 15:15	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Silicon Isotope Technology for Quantum Computing Satoru Miyamoto (Keio Univ.), Usami Noritaka (Nagoya Univ.), Kohei M. Itoh (Keio Univ.) SDM2018-89	We present isotopically engineered Si-28/SiGe heterostructures for development of silicon-based quantum computers using ... [more]	SDM2018-89 pp.35-38
SDM	2019-01-29 15:40	Tokyo	Kikai-Shinko-Kaikan Bldg.	[Invited Talk] Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90	Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more]	SDM2018-90 pp.39-44

Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan