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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2017)
Search Results: Keywords 'from:2018-01-30 to:2018-01-30'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2018-01-30 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo)  SDM2017-91 |
[more] | SDM2017-91 pp.1-4 |
| SDM | 2018-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2017-92 pp.5-8 |
| SDM | 2018-01-30 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Lateral Charge Migration Suppression Technique of 3D-NAND Flash by Vth Nearing Kyoji Mizoguchi, Shohei Kotaki, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.) SDM2017-93 |
In the near data computing, a SSD controller embeds more processing units and RAMs to execute a part of application whic... [more] | SDM2017-93 pp.9-12 |
| SDM | 2018-01-30 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas) SDM2017-94 |
Reliability and scalability of split-gate metal-oxide nitride oxide silicon (SG-MONOS) are discussed for 16/14nm-node em... [more] | SDM2017-94 pp.13-16 |
| SDM | 2018-01-30 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET Pablo Stoliar (nanoGUNE), Alejandro Schulman, Ai Kitoh, Akihito Sawa, Isao H. Inoue (AIST) SDM2017-95 |
We have developed an ultra-stable spike-timing-dependent plasticity (STDP) synapse based on a unique field-effect transi... [more] | SDM2017-95 pp.17-20 |
| SDM | 2018-01-30 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] | SDM2017-96 pp.21-24 |
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