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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2017)

Search Results: Keywords 'from:2017-10-25 to:2017-10-25'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2017-10-25
14:00
Miyagi Niche, Tohoku Univ. [Invited Talk] Zero-step-height planarization: Controlling PMD volume before CMP
Tomoyasu Kakegawa, Takuya Futase (SanDisk) SDM2017-50
We achieved excellent planarization for a pre-metal dielectric (PMD) layer regardless of its pattern density distributio... [more] SDM2017-50
pp.1-7
SDM 2017-10-25
14:50
Miyagi Niche, Tohoku Univ. Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) SDM2017-51
Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size... [more] SDM2017-51
pp.9-14
SDM 2017-10-25
15:20
Miyagi Niche, Tohoku Univ. Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52
MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] SDM2017-52
pp.15-19
SDM 2017-10-25
16:00
Miyagi Niche, Tohoku Univ. Nanoscale conformal doping technology by spin on diffusion source
Tetsuro Kinoshita, Shunichi Mashita, Takuya Ohashi, Yoshihiro Sawada, Yohei Kinoshita, Satoshi Fujimura (TOK) SDM2017-53
We developed a coating material which can form nanoscale conformal film on the wafer with 3D structure. In this study, c... [more] SDM2017-53
pp.21-24
SDM 2017-10-25
16:30
Miyagi Niche, Tohoku Univ. [Invited Talk] A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator
Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-54
The grain growth of a pentacene thin film, which is a well-known p-type organic semiconductor, is sensitive to underneat... [more] SDM2017-54
pp.25-30
SDM 2017-10-26
09:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Utilization of Big Data for Innovation in Semiconductor Memory Manufacturing -- Comprehensive Big-Data-Based Monitoring System for Yield Analysis in Semiconductor Manufacturing --
Hiroshi Akahori (Toshiba Memory), Kouta Nakata, Ryohei Orihara, Yoshiaki Mizuoka, Kentaro Takagi (Toshiba), Kenichi Kadota, Takaharu Nishimura, Yukako Tanaka, Hidetaka Eguchi (Toshiba Memory) SDM2017-55
In this work, we focus on yield analysis task where engineers identify the cause of failure from wafer failure map patte... [more] SDM2017-55
pp.31-33
SDM 2017-10-26
10:20
Miyagi Niche, Tohoku Univ. A High Sensitivity Realtime Compact Gas Concentration Sensor using UV absorption spectroscopy and Charge Amplifier Circuit
Hidekazu Ishii (Tohoku Univ.), Masaaki Nagase, Nobukazu Ikeda (Fujikin Inc.), Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) SDM2017-56
Metal organic (MO) gases are used in electronic device manufacturing processes such as semiconductors, power devices, LE... [more] SDM2017-56
pp.35-38
SDM 2017-10-26
10:50
Miyagi Niche, Tohoku Univ. Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] SDM2017-57
pp.39-44
SDM 2017-10-26
13:00
Miyagi Niche, Tohoku Univ. [Invited Lecture] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono (Renesas Electronics) SDM2017-58
Highly reliable Physical Unclonable Functions (PUF) based on 28nm Split-Gate MONOS (SG-MONOS) embedded flash memory is d... [more] SDM2017-58
pp.45-49
SDM 2017-10-26
13:30
Miyagi Niche, Tohoku Univ. Pinning Voltage Control of CMOS Image Sensor by measuring sheet resistance at micro test structure in scribe line
Yotaro Goto (RSMC), Tadasihi Yamaguchi, Masazumi Matsuura (REL), Koji Iizuka (RSMC) SDM2017-59
 [more] SDM2017-59
pp.51-55
SDM 2017-10-26
14:00
Miyagi Niche, Tohoku Univ. Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.) SDM2017-60
Behaviors of random telegraph noise (RTN) occurs at CMOS image sensors’ in-pixel source follower transistors (SF) toward... [more] SDM2017-60
pp.57-62
 Results 1 - 11 of 11  /   
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