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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2016)

Search Results: Keywords 'from:2016-10-26 to:2016-10-26'
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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-10-26
14:00		 Miyagi Niche, Tohoku Univ. [Invited Talk] Controlling Metallic Contamination in Advanced ULSI Processing
Koichiro Saga (Sony) SDM2016-69		 Metal impurities dissolved in silicon can cause “recombination centers”, which degrade retention characteristics of DRAM... [more] SDM2016-69
pp.1-8
SDM 2016-10-26
14:50		 Miyagi Niche, Tohoku Univ. Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ.), Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe (Tokyo Electron Tohoku) SDM2016-70		  [more] SDM2016-70
pp.9-14
SDM 2016-10-26
15:30		 Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71		 Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2016-71
pp.15-20
SDM 2016-10-26
16:10		 Miyagi Niche, Tohoku Univ. [Invited Talk] Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias
Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT) SDM2016-72		 We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] SDM2016-72
pp.21-25
SDM 2016-10-27
10:00		 Miyagi Niche, Tohoku Univ. Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition
Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA) SDM2016-73		 Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulato... [more] SDM2016-73
pp.27-30
SDM 2016-10-27
10:25		 Miyagi Niche, Tohoku Univ. A Study on Pentacene Film Formation on SiO2 with Wet Process for Bottom-Contact Type OFETs
Yasutaka Maeda, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2016-74		 The growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneath mate... [more] SDM2016-74
pp.31-34
SDM 2016-10-27
10:50		 Miyagi Niche, Tohoku Univ. Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2016-75		 As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have be... [more] SDM2016-75
pp.35-38
SDM 2016-10-27
11:15		 Miyagi Niche, Tohoku Univ. Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76		 MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] SDM2016-76
pp.39-44
SDM 2016-10-27
13:00		 Miyagi Niche, Tohoku Univ. [Invited Talk] Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF
Hiroki Takahashi, Hiroshi Tanaka, Masahiro Oda, Mitsuyoshi Ando, Naoto Niisoe (TPSCo), Shinichi Kawai, Takuya Asano, Mitsugu Yoshita, Tohru Yamada (PSCS) SDM2016-77		 Novel pixel structure with Stacked Deep Photodiode (SDP) has been newly developed for both high Near Infra-Red (NIR) sen... [more] SDM2016-77
pp.45-48
SDM 2016-10-27
13:50		 Miyagi Niche, Tohoku Univ. [Invited Talk] Low-Noise Imaging Techniques for Scientific CMOS Image Sensors
Min-Woong Seo, Shoji Kawahito (Shizuoka Univ.) SDM2016-78		  [more] SDM2016-78
pp.49-52
 Results 1 - 10 of 10  /   
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