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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2012)
Search Results: Keywords 'from:2012-12-07 to:2012-12-07'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2012-12-07 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)  SDM2012-115 |
Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] | SDM2012-115 pp.1-5 |
| SDM | 2012-12-07 10:15 |
Kyoto | Kyoto Univ. (Katsura) | Plasmaless etching of silicon carbide using chlorine based gas Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2012-116 |
Silicon carbide (SiC) could be etched by a plasmaless process in chlorine based ambient over 900oC. The etch pits were f... [more] | SDM2012-116 pp.7-12 |
| SDM | 2012-12-07 10:30 |
Kyoto | Kyoto Univ. (Katsura) | Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2012-117 |
SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, S... [more] | SDM2012-117 pp.13-18 |
| SDM | 2012-12-07 10:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2012-118 |
We have already reported that the interface state density of MOS capacitors on n-type 4H-SiC (0001) and (000-1) faces ca... [more] | SDM2012-118 pp.19-23 |
| SDM | 2012-12-07 11:00 |
Kyoto | Kyoto Univ. (Katsura) | Surface Modification of Glass Substrate by Ion Beam Irradiation of Ionic Liquid BMIM-PF6 Mitsuaki Takeuchi, Takuya Hamaguchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) SDM2012-119 |
Ionic liquids(ILs) are known to be potential solvents for green chemistry in the recent years, which are molten salt a... [more] |
SDM2012-119 pp.25-30 |
| SDM | 2012-12-07 11:15 |
Kyoto | Kyoto Univ. (Katsura) | Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams Kosuke Imanaka, Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) SDM2012-120 |
Si substrates irradiated with polyatomic ions, which wereC$_{3}$H$_{7}^{+}$，C$_{6}$H$_{13}^{+}$\ and C$_{12}$H$_{25}^{+}... [more] | SDM2012-120 pp.31-35 |
| SDM | 2012-12-07 11:30 |
Kyoto | Kyoto Univ. (Katsura) | Study of carrier behavior in memory transistor using DNA Shoko Maeno, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ. of Hyogo) SDM2012-121 |
We produced electrodes with a gap of about 100nm by using the substrate Si, DNA was fixed between the electrodes, and it... [more] | SDM2012-121 pp.37-40 |
| SDM | 2012-12-07 11:45 |
Kyoto | Kyoto Univ. (Katsura) | Delivery process of gold nanoparticles using protein and its plasmon characteristics Satoshi Saijo, Yasuaki Ishikawa, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-122 |
We located gold nanoparticles coupled with supramolecules onto Si and glass substrate without aggregation, and measured ... [more] | SDM2012-122 pp.41-45 |
| SDM | 2012-12-07 13:00 |
Kyoto | Kyoto Univ. (Katsura) | Neural Network using Thin-Film Transistors
-- Working Confirmation of Asymmetric Circuit -- Mutsumi Kimura, Yuki Yamaguchi, Ryohei Morita, Yusuke Fujita, Tomoaki Miyatani, Tomohiro Kasakawa (Ryukoku Univ.) SDM2012-123 |
We are developing neural networks of device level using thin-film transistors (TFT). By adopting an interconnect-type ne... [more] | SDM2012-123 pp.47-52 |
| SDM | 2012-12-07 13:15 |
Kyoto | Kyoto Univ. (Katsura) | Retinal Prosthesis of Frequency Modulation using Thin Film Photo Transistors Takayuki Kadonome, Atsushi Matsumura, Tsuyoshi Higashiyama, Shohei Oyama, Mutsumi Kimura (Ryukoku Univ.) SDM2012-124 |
Although artificial retinas have been developed using LSI technology to date, there were issues from the viewpoints of ... [more] | SDM2012-124 pp.53-57 |
| SDM | 2012-12-07 13:30 |
Kyoto | Kyoto Univ. (Katsura) | Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2012-125 |
Transparent amorphous oxide semiconductor (TAOS) has attracted considerable attention as an alternative material for a-S... [more] | SDM2012-125 pp.59-64 |
| SDM | 2012-12-07 13:45 |
Kyoto | Kyoto Univ. (Katsura) | Design for inexpensive Detector (Silicon Drift Detector) Ryota Okada, Kazuki Matsutani, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2012-126 |
Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues... [more] | SDM2012-126 pp.65-70 |
| SDM | 2012-12-07 14:00 |
Kyoto | Kyoto Univ. (Katsura) | Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) SDM2012-127 |
The photoluminescence (PL) intensity at room temperature increased with decreasing defect density measured by DLTS(deep ... [more] | SDM2012-127 pp.71-76 |
| SDM | 2012-12-07 14:15 |
Kyoto | Kyoto Univ. (Katsura) | Photovoltaic characteristics of depth controled the emitter layer and selective emitter layer formed by laser doping Shigeaki Tanaka, Hideki Nishimura, Takashi Fuyuki (NAIST) SDM2012-128 |
[more] | SDM2012-128 pp.77-81 |
| SDM | 2012-12-07 14:30 |
Kyoto | Kyoto Univ. (Katsura) | Improvement of the electronic states by controlling the interface between dopant and substrate in laser doping for textured silicon Hideki Nishimura, Shigeaki Tanaka, Shota Morisaki, Shingo Yumoto, Takashi Fuyuki (NAIST) SDM2012-129 |
The laser doping (LD) has many attention because it enable improvement of the cell efficiency and reduction of the cost ... [more] | SDM2012-129 pp.83-87 |
| SDM | 2012-12-07 14:45 |
Kyoto | Kyoto Univ. (Katsura) | Fabrication of N-type Silicon Solar Cells by Laser Doping Method for High Efficiency Shota Morisaki, Hideki Nishimura, Emi Sugimura, Takashi Fuyuki (NAIST) SDM2012-130 |
[more] | SDM2012-130 pp.89-93 |
| SDM | 2012-12-07 15:15 |
Kyoto | Kyoto Univ. (Katsura) | Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST) SDM2012-131 |
Laser doping (LD) is a new process to produce a low-cost, high efficient crystalline silicon solar cells. Since LD can p... [more] | SDM2012-131 pp.95-99 |
| SDM | 2012-12-07 15:30 |
Kyoto | Kyoto Univ. (Katsura) | Improvement of conversion efficiency for solar cell with MOS structure. Takahiro Kobayashi, Naoto Matsuo, Akira Heya (Univ. of Hyogo) SDM2012-132 |
The energy loss of solar cell due to the recombination of holes and electrons which are excited by the incident solar be... [more] | SDM2012-132 pp.101-105 |
| SDM | 2012-12-07 15:45 |
Kyoto | Kyoto Univ. (Katsura) | Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based Emi Sugimura, Shigekazu Shimazaki, Ayumi Tani, Takashi Fuyuki (NAIST) SDM2012-133 |
The electroluminescence (EL) imaging has received spatially resolved information about the electronic material propertie... [more] | SDM2012-133 pp.107-111 |
| SDM | 2012-12-07 16:00 |
Kyoto | Kyoto Univ. (Katsura) | Fabrication of Ferroelectric Microstructures by Proton Beam Irradiation Masaki Yamaguchi, Kazuki Watanabe (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) SDM2012-134 |
In the fabrication of micro-patterned ferroelectric bismuth titanate thin films were investigated. We use metal-octylate... [more] | SDM2012-134 pp.113-117 |
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