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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2012)
Search Results: Keywords 'from:2012-10-25 to:2012-10-25'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2012-10-25 15:20 |
Miyagi | Tohoku Univ. (Niche) | Chemical structures of compositional transition layer at SiO2/Si(100) interface Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.)  SDM2012-89 |
[more] | SDM2012-89 pp.1-4 |
| SDM | 2012-10-25 15:45 |
Miyagi | Tohoku Univ. (Niche) | AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.) SDM2012-90 |
(To be available after the conference date) [more] | SDM2012-90 pp.5-9 |
| SDM | 2012-10-25 16:10 |
Miyagi | Tohoku Univ. (Niche) | Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) SDM2012-91 |
Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflect... [more] | SDM2012-91 pp.11-14 |
| SDM | 2012-10-25 16:35 |
Miyagi | Tohoku Univ. (Niche) | Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) |
Si substrate damage in the source/drain extension regions during plasma etching is a serious issue that causes degradati... [more] | |
| SDM | 2012-10-26 09:30 |
Miyagi | Tohoku Univ. (Niche) | Noise Performance of Accumulation MOSFETs Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92 |
Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for... [more] | SDM2012-92 pp.15-20 |
| SDM | 2012-10-26 09:55 |
Miyagi | Tohoku Univ. (Niche) | Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-93 |
[more] | SDM2012-93 pp.21-26 |
| SDM | 2012-10-26 10:20 |
Miyagi | Tohoku Univ. (Niche) | [Special Talk]
Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.) SDM2012-94 |
[more] | SDM2012-94 pp.27-32 |
| SDM | 2012-10-26 13:00 |
Miyagi | Tohoku Univ. (Niche) | Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator Min Liao (Tokyo Inst. of Tech.), Hiroshi Ishiwara (Konkuk Univ.), Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2012-95 |
[more] | SDM2012-95 pp.33-36 |
| SDM | 2012-10-26 13:25 |
Miyagi | Tohoku Univ. (Niche) | Effect of silicon surface roughness on MOSFET performance with ultra-thin HfON gate insulator formed by ECR sputtering Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2012-96 |
[more] | SDM2012-96 pp.37-40 |
| SDM | 2012-10-26 13:50 |
Miyagi | Tohoku Univ. (Niche) | Ultra high speed wet etching technology for a silicon wafer process Takeshi Sakai, Tatsuro Yoshida, Kazuhiro Yoshikawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-97 |
The silicon wafer thinning technology is important in three-dimensional integrated technology. In this paper, we conside... [more] | SDM2012-97 pp.41-45 |
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