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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2012)

Search Results: Keywords 'from:2012-08-02 to:2012-08-02'
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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 27  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2012-08-02
09:10		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido A Variation-Aware Low-Voltage Set-Associative Cache with Mixed-Associativity
Jinwook Jung, Yohei Nakata, Shunsuke Okumura, Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.) SDM2012-63 ICD2012-31		 In this paper, we propose the mixed associativity scheme using 7T/14T SRAM, which can reduce the minimum operating volta... [more] SDM2012-63 ICD2012-31
pp.1-6
ICD, SDM 2012-08-02
09:35		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido A 40-nm 256-Kb Sub-10 pJ/Access 8T SRAM with Read Bitline Amplitude Limiting (RBAL) Scheme
Shusuke Yoshimoto, Masaharu Terada, Yohei Umeki, Shunsuke Okumura (Kobe Univ.), Atsushi Kawasumi, Toshikazu Suzuki, Shinichi Moriwaki, Shinji Miyano (STARC), Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.) SDM2012-64 ICD2012-32		  [more] SDM2012-64 ICD2012-32
pp.7-12
ICD, SDM 2012-08-02
10:00		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique
Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33		 The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM ... [more] SDM2012-65 ICD2012-33
pp.13-16
ICD, SDM 2012-08-02
10:35		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Lecture] Comparison between power gating and DVFS from the view point of energy efficiency
Atsuki Inoue, Eiji Yoshida (Fujitsu Lab. Ltd.) SDM2012-66 ICD2012-34		  [more] SDM2012-66 ICD2012-34
pp.17-21
ICD, SDM 2012-08-02
11:00		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Power Consumption Evaluation of COOL Chip : Heterogeneous Multi-Core Processors for energy-saving Embedded Systems
Michiya Hagimoto, Hiroyuki Uchida, Takashi Omori, Yasumori Hibi, Yukoh Matsumoto (TOPS Systems), Fumito Imura, Naoya Watanabe, Katsuya Kikuchi, Motohiro Suzuki, Hiroshi Nakagawa, Masahiro Aoyagi (AIST) 		 [more]
ICD, SDM 2012-08-02
11:25		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] Low Energy Dissipation Circuits with 0.5V Operation Voltage and Applications
Hirofumi Shinohara (STARC) SDM2012-67 ICD2012-35		 Extremely low voltage operation down to nearly or less than 0.5V has been gathering attention as a fundamental way to re... [more] SDM2012-67 ICD2012-35
pp.23-28
ICD, SDM 2012-08-02
13:00		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Lecture] Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications
Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36		 Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficien... [more] SDM2012-68 ICD2012-36
pp.29-32
ICD, SDM 2012-08-02
13:25		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-69 ICD2012-37		 Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is analyzed and compared with convent... [more] SDM2012-69 ICD2012-37
pp.33-36
ICD, SDM 2012-08-02
13:50		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido 10nm-Diameter Tri-Gate Silicon Nanowire MOSFETs with Enhanced High-Field Transport and Vth Tunability through Thin BOX
Kensuke Ota, Masumi Saitoh, Chika Tanaka (Toshiba), Ken Uchida (TIT), Toshinori Numata (Toshiba) SDM2012-70 ICD2012-38		  [more] SDM2012-70 ICD2012-38
pp.37-42
ICD, SDM 2012-08-02
14:15		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido 3D Interconnect Technology by the Ultrawide-Interchip-Bus System for 3D Stacked LSI Systems
Fumito Imura, Shunsuke Nemoto, Naoya Watanabe, Fumiki Kato, Katsuya Kikuchi, Hiroshi Nakagawa (AIST), Michiya Hagimoto, Hiroyuki Uchida, Takashi Omori, Yasumori Hibi, Yukoh Matsumoto (TOPS Systems), Masahiro Aoyagi (AIST) SDM2012-71 ICD2012-39		 We have proposed the ultrawide-interchip-bus system for the interchip communication of the 3-dimentional stacked LSI sys... [more] SDM2012-71 ICD2012-39
pp.43-48
ICD, SDM 2012-08-02
14:40		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Intra/Inter Tier Substrate Noise Measurements in 3D ICs
Yasumasa Takagi, Yuuki Araga, Makoto Nagata (Kobe Univ.), Geert Van der Plas, Jaemin Kim, Nikolaos Minas, Pol Marchal, Michael Libois, Antonio La Manna, Wenqi Zhang, Julien Ryckaert, Eric Beyne (IMEC) SDM2012-72 ICD2012-40		 Substrate noise propagation among stacked dice is evaluated in a 3D test vehicle of 2 tier stacking. Each tier incorpora... [more] SDM2012-72 ICD2012-40
pp.49-54
ICD, SDM 2012-08-02
15:15		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] STT-MRAM Development and Its Integration with BEOL Process for Embedded Applications
Toshihiro Sugii, Yoshihisa Iba, Masaki Aoki, Hideyuki Noshiro, Koji Tsunoda, Akiyoshi Hatada, Masaaki Nakabayashi, Yuuichi Yamazaki, Atsushi Takahashi, Chikako Yoshida (LEAP) SDM2012-73 ICD2012-41		  [more] SDM2012-73 ICD2012-41
pp.55-58
ICD, SDM 2012-08-02
15:55		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes
Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42		 A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] SDM2012-74 ICD2012-42
pp.59-63
ICD, SDM 2012-08-02
16:20		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Static noise margin and energy performance analyses of a nonvolatile SRAM cell using pseudo-spin-MOSFET
Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara (Tokyo Inst. Tech.) SDM2012-75 ICD2012-43		  [more] SDM2012-75 ICD2012-43
pp.65-70
ICD, SDM 2012-08-02
16:45		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Design Technology of stacked Type Chain PRAM Readout
Sho Kato, Shigeyoshi Watanabe (SIT) SDM2012-76 ICD2012-44		  [more] SDM2012-76 ICD2012-44
pp.71-76
ICD, SDM 2012-08-03
09:00		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Design of system LSI/memory with low power tunneling type transistor.
Ryosuke Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech.) SDM2012-77 ICD2012-45		  [more] SDM2012-77 ICD2012-45
pp.77-81
ICD, SDM 2012-08-03
09:25		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] Nanocarbon Interconnects -- Aiming to replace ultra-fine metal interconnects --
Akihiro Kajita, Makoto Wada, Tatsuro Saito, Masayuki Kitamura, Yuichi Yamazaki, Masayuki Katagiri, Ban Ito, Daisuke Nishide, Takashi Matsumoto, Atsunobu Isobayashi, Mariko Suzuki, Atsuko Sakata, Masahito Watanabe, Naoshi Sakuma, Tadashi Sakai (LEAP) SDM2012-78 ICD2012-46		 The width of interconnects has been shrinking toward 10nm in accordance with LSI devices shrinkage. The resistivity of s... [more] SDM2012-78 ICD2012-46
pp.83-87
ICD, SDM 2012-08-03
10:05		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47		 We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] SDM2012-79 ICD2012-47
pp.89-92
ICD, SDM 2012-08-03
10:55		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A Burst-Mode Laser Diode Driver with Burst-by-Burst Power Saving for 10G-EPON Systems
Hiroshi Koizumi, Minoru Togashi, Masafumi Nogawa, Yusuke Ohtomo (NTT) SDM2012-80 ICD2012-48		 A burst-mode laser diode driver for 10G-EPON with a burst-by-burst power-saving function reduces power consumption by 93... [more] SDM2012-80 ICD2012-48
pp.93-98
ICD, SDM 2012-08-03
11:35		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] An Insole Pedometer With Piezoelectric Energy Harvester and 2V Organic Circuits
Koichi Ishida, Tsung-Ching Huang, Kentaro Honda, Yasuhiro Shinozuka, Hiroshi Fuketa, Tomoyuki Yokota (Univ. of Tokyo), Ute Zschieschang, Hagen Klauk (Max Planck Inst.), Gregory Tortissier, Tsuyoshi Sekitani, Makoto Takamiya, Hiroshi Toshiyoshi, Takao Someya, Takayasu Sakurai (Univ. of Tokyo) SDM2012-81 ICD2012-49		  [more] SDM2012-81 ICD2012-49
pp.99-104
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