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Technical Committee on Microwaves (MW) (Searched in: 2016)
Search Results: Keywords 'from:2017-01-26 to:2017-01-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2017-01-26 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.)  ED2016-96 MW2016-172 |
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] | ED2016-96 MW2016-172 pp.1-5 |
| MW, ED | 2017-01-26 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Commercialization of GaN-HEMT for High Frequency Application Yasunori Tateno (Sumitomo Electric) ED2016-97 MW2016-173 |
[more] | ED2016-97 MW2016-173 pp.7-12 |
| MW, ED | 2017-01-26 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174 |
[more] | ED2016-98 MW2016-174 pp.13-16 |
| MW, ED | 2017-01-26 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Towards Realization of GaN Vertical Power Devices Jun Suda (Kyoto Univ.) ED2016-99 MW2016-175 |
GaN vertical power devices have attracted much attention as next-generation high-voltage low-on-resistance power devices... [more] | ED2016-99 MW2016-175 pp.17-18 |
| MW, ED | 2017-01-26 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Current status and problems of epitaxial wafers for GaN electronic devices Yohei Otoki (SCIOCS) ED2016-100 MW2016-176 |
GaN electronic devices have been in the practical stage mainly for high frequency applications. In epitaxial growth, the... [more] | ED2016-100 MW2016-176 pp.19-22 |
| MW, ED | 2017-01-26 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Characterization of Metal/GaN Schottky Contacts
-- Review from the Early Days -- Kenji Shiojima (Univ. of Fukui) ED2016-101 MW2016-177 |
We report our experimental results on GaN Schottky contacts in conjunction with a review of the development of GaN elect... [more] | ED2016-101 MW2016-177 pp.23-28 |
| MW, ED | 2017-01-27 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] | ED2016-102 MW2016-178 pp.29-33 |
| MW, ED | 2017-01-27 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179 |
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] | ED2016-103 MW2016-179 pp.35-40 |
| MW, ED | 2017-01-27 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of Filtering Antenna with Transmission Zeros Using Cross Coupling Between Antenna and Resonator Toshiki Miyazaki, Masataka Ohira, Zhewag Ma, Xiaolong Wang (Saitama Univ.) ED2016-104 MW2016-180 |
The generation of transmission zeros (TZs) at stopbands is indispensable for filtering antennas to obtain a sharp passba... [more] | ED2016-104 MW2016-180 pp.41-46 |
| MW, ED | 2017-01-27 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improved Design Method of Dual-Band Bandpass Filters Using Microstrip Composite Resonators Ru Zhang, Zhewang Ma, Masataka Ohira, Xiaolong Wan (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.) ED2016-105 MW2016-181 |
[more] | ED2016-105 MW2016-181 pp.47-52 |
| MW, ED | 2017-01-27 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | An X-band Low Loss/High Power SPST Switch Using GaN on Si Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric) ED2016-106 MW2016-182 |
An X-band low loss and high power switch using GaN on Si has been developed. The high power switch utilized asymmetric c... [more] | ED2016-106 MW2016-182 pp.53-56 |
| MW, ED | 2017-01-27 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) ED2016-107 MW2016-183 |
[more] | ED2016-107 MW2016-183 pp.57-62 |
| MW, ED | 2017-01-27 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184 |
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] | ED2016-108 MW2016-184 pp.63-68 |
| MW, ED | 2017-01-27 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.) ED2016-109 MW2016-185 |
[more] | ED2016-109 MW2016-185 pp.69-73 |
| MW, ED | 2017-01-27 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186 |
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] | ED2016-110 MW2016-186 pp.75-79 |
| MW, ED | 2017-01-27 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) ED2016-111 MW2016-187 |
In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT proce... [more] | ED2016-111 MW2016-187 pp.81-84 |
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