Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, CPM, LQE |
2006-10-05 13:00 |
Kyoto |
|
X-band AlGaN/GaN HEMT with over 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] |
ED2006-152 CPM2006-89 LQE2006-56 pp.1-5 |
ED, CPM, LQE |
2006-10-05 13:25 |
Kyoto |
|
Improvement of Breakdown Voltage of AlGaN/GaN HEMT Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2006-153 CPM2006-90 LQE2006-57 pp.7-12 |
ED, CPM, LQE |
2006-10-05 13:50 |
Kyoto |
|
RF characteristics of AlGaN/GaN-HEMTs on Si substrates Hideyuki Okita, Juro Mita, Yoshiaki Sano, Toshiharu Marui, Masanori Itoh, Shinichi Hoshi, Fumihiko Toda, Shohei Seki (Oki), Takashi Egawa (NIT) |
[more] |
ED2006-154 CPM2006-91 LQE2006-58 pp.13-18 |
ED, CPM, LQE |
2006-10-05 14:15 |
Kyoto |
|
Study on crystal growth of AlGaN/GaN HEMT on SiC substrate Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) |
AlGaN/GaN HEMT is a promising candidate for next generation high-power and high-frequency devices. In our study to impro... [more] |
ED2006-155 CPM2006-92 LQE2006-59 pp.19-22 |
ED, CPM, LQE |
2006-10-05 14:40 |
Kyoto |
|
GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] |
ED2006-156 CPM2006-93 LQE2006-60 pp.23-27 |
ED, CPM, LQE |
2006-10-05 15:20 |
Kyoto |
|
Interface control for GaN-based electron devices Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University) |
[more] |
ED2006-157 CPM2006-94 LQE2006-61 pp.29-34 |
ED, CPM, LQE |
2006-10-05 15:45 |
Kyoto |
|
Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] |
ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
ED, CPM, LQE |
2006-10-05 16:10 |
Kyoto |
|
Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy Kenichi Kosaka, Tatsuya Hujishima (Ritsumeikan Univ.), Kaoru Inoue (FED), Akihiro Hinoki (Ritsumeikan Univ.), Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya (FED), Akira Suzuki (Ritsumeikan Univ./FED), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) |
[more] |
ED2006-159 CPM2006-96 LQE2006-63 pp.39-43 |
ED, CPM, LQE |
2006-10-05 16:35 |
Kyoto |
|
Influences of nitrogen plasma on GaN growth on Si substrate by ECR-MBE growth method Tokuo Yodo, Yuki Shiraishi, Kiyotaka Hirata, Hiroyuki Tomita, Norikaki Nishie, Hiroaki Horibe, Keigo Iwata, Yoshiyuki Harada (Osaka Inst. of Tech.) |
[more] |
ED2006-160 CPM2006-97 LQE2006-64 pp.45-49 |
ED, CPM, LQE |
2006-10-06 09:30 |
Kyoto |
|
* Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Ulrich T Schwarz, Harald Braun (Regensburg Univ.), Shinichi Nagahama, Takashi Mukai (Nichia Corp.) |
[more] |
ED2006-161 CPM2006-98 LQE2006-65 pp.51-55 |
ED, CPM, LQE |
2006-10-06 09:55 |
Kyoto |
|
Growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN substrates Masaya Ueda, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia) |
(To be available after the conference date) [more] |
ED2006-162 CPM2006-99 LQE2006-66 pp.57-61 |
ED, CPM, LQE |
2006-10-06 10:20 |
Kyoto |
|
Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) |
Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of nex... [more] |
ED2006-163 CPM2006-100 LQE2006-67 pp.63-67 |
ED, CPM, LQE |
2006-10-06 11:00 |
Kyoto |
|
Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei) |
We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phas... [more] |
ED2006-164 CPM2006-101 LQE2006-68 pp.69-73 |
ED, CPM, LQE |
2006-10-06 11:25 |
Kyoto |
|
Characteristics of Cathodoluminescence from bulk InGaN microcrystals Hisashi Kanie, Yuji Sema (Tokyo Univ. of Science) |
[more] |
ED2006-165 CPM2006-102 LQE2006-69 pp.75-78 |
ED, CPM, LQE |
2006-10-06 11:50 |
Kyoto |
|
Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba) |
The internal quantum efficiency of GaN-based light emitting diodes (LEDs) was analyzed by investigating electroluminesce... [more] |
ED2006-166 CPM2006-103 LQE2006-70 pp.79-82 |
ED, CPM, LQE |
2006-10-06 13:15 |
Kyoto |
|
Fabrication of GaN-based unipolar UV LEDs grown by MOVPE Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda (Kogakuin Univ.) |
[more] |
ED2006-167 CPM2006-104 LQE2006-71 pp.83-86 |
ED, CPM, LQE |
2006-10-06 13:40 |
Kyoto |
|
Fabrication and Characterization of UV light emitter on various substrates Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko) |
[more] |
ED2006-168 CPM2006-105 LQE2006-72 pp.87-92 |
ED, CPM, LQE |
2006-10-06 14:05 |
Kyoto |
|
GaN films deposited by CS-MBD with pulsed source feeding Masatoshi Arai, Koichi Sugimoto, Shinichi Egawa, Taichi Baba, Masaru Sawada, Tohru Honda (Kogakuin Univ.) |
GaN films were deposited at low temperature by compound-source molecular beam deposition (CS-MBD) with pulsed-source fee... [more] |
ED2006-169 CPM2006-106 LQE2006-73 pp.93-96 |
ED, CPM, LQE |
2006-10-06 14:30 |
Kyoto |
|
Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda (Matsushita Electric) |
[more] |
ED2006-170 CPM2006-107 LQE2006-74 pp.97-101 |
ED, CPM, LQE |
2006-10-06 14:55 |
Kyoto |
|
GaN/InAlN/GaN Hetero Barrier Varactor Diodes Nobuhisa Tanuma, Minoru Kubota, Munecazu Tacano (Meisei Univ.) |
The capacitance-voltage (C-V) characteristics of In0.17Al0.83N/GaN heterostructure barrier varactors (HBV) grown by meta... [more] |
ED2006-171 CPM2006-108 LQE2006-75 pp.103-106 |
|