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Technical Committee on Lasers and Quantum Electronics (LQE)  (Searched in: 2006)

Search Results: Keywords 'from:2006-10-05 to:2006-10-05'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 24  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2006-10-05
13:00
Kyoto   X-band AlGaN/GaN HEMT with over 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-152 CPM2006-89 LQE2006-56
pp.1-5
ED, CPM, LQE 2006-10-05
13:25
Kyoto   Improvement of Breakdown Voltage of AlGaN/GaN HEMT
Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna)
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] ED2006-153 CPM2006-90 LQE2006-57
pp.7-12
ED, CPM, LQE 2006-10-05
13:50
Kyoto   RF characteristics of AlGaN/GaN-HEMTs on Si substrates
Hideyuki Okita, Juro Mita, Yoshiaki Sano, Toshiharu Marui, Masanori Itoh, Shinichi Hoshi, Fumihiko Toda, Shohei Seki (Oki), Takashi Egawa (NIT)
 [more] ED2006-154 CPM2006-91 LQE2006-58
pp.13-18
ED, CPM, LQE 2006-10-05
14:15
Kyoto   Study on crystal growth of AlGaN/GaN HEMT on SiC substrate
Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.)
AlGaN/GaN HEMT is a promising candidate for next generation high-power and high-frequency devices. In our study to impro... [more] ED2006-155 CPM2006-92 LQE2006-59
pp.19-22
ED, CPM, LQE 2006-10-05
14:40
Kyoto   GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures
Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] ED2006-156 CPM2006-93 LQE2006-60
pp.23-27
ED, CPM, LQE 2006-10-05
15:20
Kyoto   Interface control for GaN-based electron devices
Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University)
 [more] ED2006-157 CPM2006-94 LQE2006-61
pp.29-34
ED, CPM, LQE 2006-10-05
15:45
Kyoto   Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT)
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] ED2006-158 CPM2006-95 LQE2006-62
pp.35-38
ED, CPM, LQE 2006-10-05
16:10
Kyoto   Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy
Kenichi Kosaka, Tatsuya Hujishima (Ritsumeikan Univ.), Kaoru Inoue (FED), Akihiro Hinoki (Ritsumeikan Univ.), Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya (FED), Akira Suzuki (Ritsumeikan Univ./FED), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2006-159 CPM2006-96 LQE2006-63
pp.39-43
ED, CPM, LQE 2006-10-05
16:35
Kyoto   Influences of nitrogen plasma on GaN growth on Si substrate by ECR-MBE growth method
Tokuo Yodo, Yuki Shiraishi, Kiyotaka Hirata, Hiroyuki Tomita, Norikaki Nishie, Hiroaki Horibe, Keigo Iwata, Yoshiyuki Harada (Osaka Inst. of Tech.)
 [more] ED2006-160 CPM2006-97 LQE2006-64
pp.45-49
ED, CPM, LQE 2006-10-06
09:30
Kyoto   *
Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Ulrich T Schwarz, Harald Braun (Regensburg Univ.), Shinichi Nagahama, Takashi Mukai (Nichia Corp.)
 [more] ED2006-161 CPM2006-98 LQE2006-65
pp.51-55
ED, CPM, LQE 2006-10-06
09:55
Kyoto   Growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN substrates
Masaya Ueda, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia)
(To be available after the conference date) [more] ED2006-162 CPM2006-99 LQE2006-66
pp.57-61
ED, CPM, LQE 2006-10-06
10:20
Kyoto   Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of nex... [more] ED2006-163 CPM2006-100 LQE2006-67
pp.63-67
ED, CPM, LQE 2006-10-06
11:00
Kyoto   Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy
Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei)
We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phas... [more] ED2006-164 CPM2006-101 LQE2006-68
pp.69-73
ED, CPM, LQE 2006-10-06
11:25
Kyoto   Characteristics of Cathodoluminescence from bulk InGaN microcrystals
Hisashi Kanie, Yuji Sema (Tokyo Univ. of Science)
 [more] ED2006-165 CPM2006-102 LQE2006-69
pp.75-78
ED, CPM, LQE 2006-10-06
11:50
Kyoto   Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime
Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba)
The internal quantum efficiency of GaN-based light emitting diodes (LEDs) was analyzed by investigating electroluminesce... [more] ED2006-166 CPM2006-103 LQE2006-70
pp.79-82
ED, CPM, LQE 2006-10-06
13:15
Kyoto   Fabrication of GaN-based unipolar UV LEDs grown by MOVPE
Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda (Kogakuin Univ.)
 [more] ED2006-167 CPM2006-104 LQE2006-71
pp.83-86
ED, CPM, LQE 2006-10-06
13:40
Kyoto   Fabrication and Characterization of UV light emitter on various substrates
Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko)
 [more] ED2006-168 CPM2006-105 LQE2006-72
pp.87-92
ED, CPM, LQE 2006-10-06
14:05
Kyoto   GaN films deposited by CS-MBD with pulsed source feeding
Masatoshi Arai, Koichi Sugimoto, Shinichi Egawa, Taichi Baba, Masaru Sawada, Tohru Honda (Kogakuin Univ.)
GaN films were deposited at low temperature by compound-source molecular beam deposition (CS-MBD) with pulsed-source fee... [more] ED2006-169 CPM2006-106 LQE2006-73
pp.93-96
ED, CPM, LQE 2006-10-06
14:30
Kyoto   Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor
Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda (Matsushita Electric)
 [more] ED2006-170 CPM2006-107 LQE2006-74
pp.97-101
ED, CPM, LQE 2006-10-06
14:55
Kyoto   GaN/InAlN/GaN Hetero Barrier Varactor Diodes
Nobuhisa Tanuma, Minoru Kubota, Munecazu Tacano (Meisei Univ.)
The capacitance-voltage (C-V) characteristics of In0.17Al0.83N/GaN heterostructure barrier varactors (HBV) grown by meta... [more] ED2006-171 CPM2006-108 LQE2006-75
pp.103-106
 Results 1 - 20 of 24  /  [Next]  
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