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Technical Committee on Lasers and Quantum Electronics (LQE) (Searched in: 2020)
Search Results: Keywords 'from:2020-11-26 to:2020-11-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, CPM, ED | 2020-11-26 10:05 |
Online | Online | Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony)  ED2020-1 CPM2020-22 LQE2020-52 |
In our previous reports, we proposed photoacoustic (PA) and photoluminescence (PL) simultaneous measurements as a method... [more] | ED2020-1 CPM2020-22 LQE2020-52 pp.1-4 |
| LQE, CPM, ED | 2020-11-26 10:25 |
Online | Online | Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells Takumi Yamaguchi, Kyosuke Ariga, Keito Mori, Atushi A. Yamaguchi (KIT) ED2020-2 CPM2020-23 LQE2020-53 |
Internal quantum efficiency in III-nitride semiconductor light emitting layers is usually estimated from the experimenta... [more] | ED2020-2 CPM2020-23 LQE2020-53 pp.5-8 |
| LQE, CPM, ED | 2020-11-26 10:45 |
Online | Online | Calculation of carrier injection efficiency of AlGaN UVB Laser Diode Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-3 CPM2020-24 LQE2020-54 |
[more] | ED2020-3 CPM2020-24 LQE2020-54 pp.9-12 |
| LQE, CPM, ED | 2020-11-26 11:15 |
Online | Online | Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] | ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
| LQE, CPM, ED | 2020-11-26 11:35 |
Online | Online | Examination of GaN-based photodetectors for optical wireless power transmission system Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-5 CPM2020-26 LQE2020-56 |
Aiming at a high-efficiency photodetectors for the optical wireless power transmission system consisting of semiconducto... [more] | ED2020-5 CPM2020-26 LQE2020-56 pp.17-20 |
| LQE, CPM, ED | 2020-11-26 11:55 |
Online | Online | 265 nm AlGaN-based LEDs grown on AlN substrates studied by electroluminescence and photoluminescence methods Ryota Ishii (Kyoto Univ.), Akira Yoshikawa, Kazuhiro Nagase (Asahi Kasei Corporation), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2020-6 CPM2020-27 LQE2020-57 |
[more] | ED2020-6 CPM2020-27 LQE2020-57 pp.21-24 |
| LQE, CPM, ED | 2020-11-26 13:30 |
Online | Online | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58 |
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] | ED2020-7 CPM2020-28 LQE2020-58 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 13:50 |
Online | Online | Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 |
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage c... [more] | ED2020-8 CPM2020-29 LQE2020-59 pp.29-32 |
| LQE, CPM, ED | 2020-11-26 14:10 |
Online | Online | Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy
-- Comparison between n- and p-type GaN samples -- Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2020-9 CPM2020-30 LQE2020-60 |
[more] | ED2020-9 CPM2020-30 LQE2020-60 pp.33-36 |
| LQE, CPM, ED | 2020-11-26 14:40 |
Online | Online | Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink Yuto Kawasumi, Yuto Yasui (Univ. of Fukui), Yukiyasu Kashiwagi, Toshiyuki Tamai (ORIST), Kenji Shiojima (Univ. of Fukui) ED2020-10 CPM2020-31 LQE2020-61 |
Two-dimensional characterization of n-GaN Schottky contacts formed by printing method using Ni nanoink was performed by ... [more] | ED2020-10 CPM2020-31 LQE2020-61 pp.37-40 |
| LQE, CPM, ED | 2020-11-26 15:00 |
Online | Online | Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62 |
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] | ED2020-11 CPM2020-32 LQE2020-62 pp.41-44 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| LQE, CPM, ED | 2020-11-26 15:50 |
Online | Online | GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64 |
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] | ED2020-13 CPM2020-34 LQE2020-64 pp.49-52 |
| LQE, CPM, ED | 2020-11-27 10:30 |
Online | Online | CBD Growth of MgZnO Nanorods and Their UV Light Detecting Application Kohdai Hamamoto, Rikuto Kanamaru, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ED2020-14 CPM2020-35 LQE2020-65 |
[more] | ED2020-14 CPM2020-35 LQE2020-65 pp.53-56 |
| LQE, CPM, ED | 2020-11-27 10:50 |
Online | Online | Study on Taste Evaluations of Japanese Sake using Bioelectrical Impedance Analysis. Tomoya Kajiwara, Masaru Satou, Mayumi B. Takeyama (Kitami Inst. Technol) ED2020-15 CPM2020-36 LQE2020-66 |
[more] | ED2020-15 CPM2020-36 LQE2020-66 pp.57-59 |
| LQE, CPM, ED | 2020-11-27 11:20 |
Online | Online | Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67 |
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] | ED2020-16 CPM2020-37 LQE2020-67 pp.60-62 |
| LQE, CPM, ED | 2020-11-27 11:40 |
Online | Online | Time Response Characteristics of PEDOT:PSS/ZnO Nanorods/GZO Heterojunction UV Light Detectors Kenta Yamada, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ED2020-17 CPM2020-38 LQE2020-68 |
[more] | ED2020-17 CPM2020-38 LQE2020-68 pp.63-66 |
| LQE, CPM, ED | 2020-11-27 13:00 |
Online | Online | Optimization of lateral Mg activation in LEDs with GaN tunnel junctions Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.) ED2020-18 CPM2020-39 LQE2020-69 |
Current confinement structures with GaN tunnel junctions have been utilized in LEDs and laser diodes. In such devices, a... [more] | ED2020-18 CPM2020-39 LQE2020-69 pp.67-70 |
| LQE, CPM, ED | 2020-11-27 13:20 |
Online | Online | Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) ED2020-19 CPM2020-40 LQE2020-70 |
In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-ar... [more] | ED2020-19 CPM2020-40 LQE2020-70 pp.71-74 |
| LQE, CPM, ED | 2020-11-27 13:40 |
Online | Online | Optimization of the optical waveguide layer in AlGaN-based UV-B LD Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71 |
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future... [more] | ED2020-20 CPM2020-41 LQE2020-71 pp.75-78 |
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