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Technical Committee on Lasers and Quantum Electronics (LQE) (Searched in: 2017)
Search Results: Keywords 'from:2017-11-30 to:2017-11-30'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, CPM, ED | 2017-11-30 13:35 |
Aichi | Nagoya Inst. tech. | A novel method to measure absolute internal quantum efficiency in InGaN quantum wells by simultaneous photo-acoustic and photoluminescence spectroscopy Naoto Shimizu, Yuchi Takahashi, Genki Kobayashi, Takashi Nakano, Shigeta Sakai, Atsusi A. Yamaguchi (Kanazawa Inst. of Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony)  ED2017-49 CPM2017-92 LQE2017-62 |
[more] | ED2017-49 CPM2017-92 LQE2017-62 pp.1-6 |
| LQE, CPM, ED | 2017-11-30 14:00 |
Aichi | Nagoya Inst. tech. | Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2017-50 CPM2017-93 LQE2017-63 |
Current-voltage characteristics under photo-excitation in nitride-based LEDs have been measured to investigate the elect... [more] | ED2017-50 CPM2017-93 LQE2017-63 pp.7-10 |
| LQE, CPM, ED | 2017-11-30 14:25 |
Aichi | Nagoya Inst. tech. | Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2017-51 CPM2017-94 LQE2017-64 |
Analysis of S-shaped temperature dependence of PL peak energy is widely used to evaluate the degree of compositional flu... [more] | ED2017-51 CPM2017-94 LQE2017-64 pp.11-14 |
| LQE, CPM, ED | 2017-11-30 14:50 |
Aichi | Nagoya Inst. tech. | Optical properties of AlGaN quantum wires formed on AlN with macrostep surface Minehiro Hayakawa, Yuki Hayashi, Yuki Nagase, Shuhei Ichikawa, Kyosuke Kumamoto, Mami Shibaoka, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2017-52 CPM2017-95 LQE2017-65 |
Extensive studies on AlGaN/Al(Ga)N quantum wells recently achieved the commercialization of deep-ultraviolet LEDs. Howev... [more] | ED2017-52 CPM2017-95 LQE2017-65 pp.15-18 |
| LQE, CPM, ED | 2017-11-30 15:25 |
Aichi | Nagoya Inst. tech. | Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2017-53 CPM2017-96 LQE2017-66 |
GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates e... [more] | ED2017-53 CPM2017-96 LQE2017-66 pp.19-22 |
| LQE, CPM, ED | 2017-11-30 15:50 |
Aichi | Nagoya Inst. tech. | Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67 |
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] | ED2017-54 CPM2017-97 LQE2017-67 pp.23-26 |
| LQE, CPM, ED | 2017-11-30 16:15 |
Aichi | Nagoya Inst. tech. | Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy Kenji Shiojima, Takanori Hashizume (Univ. of Fukui), Masafumi Horikiri, Takeshi Tanaka (SCIOCS), Tomoyoshi Mishima (Hosei Univ.) ED2017-55 CPM2017-98 LQE2017-68 |
We characterized the effect of the surface morphology on electrical properties of the n-GaN drift-layers by using scanni... [more] | ED2017-55 CPM2017-98 LQE2017-68 pp.27-32 |
| LQE, CPM, ED | 2017-11-30 16:40 |
Aichi | Nagoya Inst. tech. | Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates
-- Metal workfunction dependence of Schottky barrier height -- Kenji Shiojima, Hiroyoshi Imadate (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2017-56 CPM2017-99 LQE2017-69 |
We report electrical characteristics of Schottky contacts with 9 different metals (Ag, Ti, Cr, W, Mo, Au, Pd, Ni, Pt) fo... [more] | ED2017-56 CPM2017-99 LQE2017-69 pp.33-38 |
| LQE, CPM, ED | 2017-12-01 09:40 |
Aichi | Nagoya Inst. tech. | A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-57 CPM2017-100 LQE2017-70 |
Two kinds of substrates, sapphire and AlN/sapphire tem-plate (AlN template), were used for the growth of InGaN/GaN multi... [more] | ED2017-57 CPM2017-100 LQE2017-70 pp.39-44 |
| LQE, CPM, ED | 2017-12-01 10:05 |
Aichi | Nagoya Inst. tech. | Realization of red resonant cavity LEDs with an Eu-doped GaN as active layer Jun Tatebayashi, Tomohiro Inaba, Keishi Shiomi, Yasuhumi Fujiwara (Osaka Univ.) ED2017-58 CPM2017-101 LQE2017-71 |
It has been an important issue to increase the light output power of Eu-doped GaN (GaN: Eu) red LEDs for their practical... [more] | ED2017-58 CPM2017-101 LQE2017-71 pp.45-48 |
| LQE, CPM, ED | 2017-12-01 10:30 |
Aichi | Nagoya Inst. tech. | Two-step graded p-AlGaN structure for deep UV-LEDs Hisanori Kojima, Toshiki Yasuda, Daiki Kanbayashi, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2017-59 CPM2017-102 LQE2017-72 |
[more] | ED2017-59 CPM2017-102 LQE2017-72 pp.49-53 |
| LQE, CPM, ED | 2017-12-01 10:55 |
Aichi | Nagoya Inst. tech. | Achievement of AlGaN deep-UV LED using photonic crystal(PhC)
-- Achievement of high-EQE(10%) AlGaN deep-UV LED using highly-reflective PhC on p-contact layer -- Yukio Kashima (Marubun), Noritoshi Maeda (RIKEN), Eriko Matsuura (Marubun), Masafumi Jo (RIKEN), Takeshi Iwai, Toshiro Morita (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Ryuichiro Kamimura, Yamato Osada (ULVAC), Yuichi Kurashima, Hideki Takagi (AIST), Hideki Hirayama (RIKEN) ED2017-60 CPM2017-103 LQE2017-73 |
[more] | ED2017-60 CPM2017-103 LQE2017-73 pp.55-60 |
| LQE, CPM, ED | 2017-12-01 12:30 |
Aichi | Nagoya Inst. tech. | Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] | ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
| LQE, CPM, ED | 2017-12-01 12:55 |
Aichi | Nagoya Inst. tech. | Improvement of PBTI reliability in GaN-MOSFETs Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75 |
[more] | ED2017-62 CPM2017-105 LQE2017-75 pp.65-68 |
| LQE, CPM, ED | 2017-12-01 13:20 |
Aichi | Nagoya Inst. tech. | Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) ED2017-63 CPM2017-106 LQE2017-76 |
Diamond is expected to be applied to high frequency and high power devices, so far high frequency and high power operati... [more] | ED2017-63 CPM2017-106 LQE2017-76 pp.69-72 |
| LQE, CPM, ED | 2017-12-01 13:45 |
Aichi | Nagoya Inst. tech. | Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-64 CPM2017-107 LQE2017-77 |
As the insulator for MIS structures in GaN-based power devices, Al2O3 fabricated by ALD has often been used. The post-de... [more] | ED2017-64 CPM2017-107 LQE2017-77 pp.73-76 |
| LQE, CPM, ED | 2017-12-01 14:20 |
Aichi | Nagoya Inst. tech. | Two-step crystal growth of GaN nanowire by MOCVD Kohei Sasai, Myunghee KIM, Atusi Suzuki, Hiroki Sibuya, Yuki Kurisaki, Kyohei Nokimura, Minoru Takebayasi, Satosi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki (Meijo Univ.) ED2017-65 CPM2017-108 LQE2017-78 |
[more] | ED2017-65 CPM2017-108 LQE2017-78 pp.77-82 |
| LQE, CPM, ED | 2017-12-01 14:45 |
Aichi | Nagoya Inst. tech. | Homoepitaxial growth on sputtered AlN templates by MOVPE Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79 |
AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its ther... [more] | ED2017-66 CPM2017-109 LQE2017-79 pp.83-86 |
| LQE, CPM, ED | 2017-12-01 15:10 |
Aichi | Nagoya Inst. tech. | Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.) ED2017-67 CPM2017-110 LQE2017-80 |
[more] | ED2017-67 CPM2017-110 LQE2017-80 pp.87-90 |
| LQE, CPM, ED | 2017-12-01 15:35 |
Aichi | Nagoya Inst. tech. | Thermal annealing of semipolar AlN on m-plane sapphire Masafumi Jo, Satoshi Minami, Hideki Hirayama (RIKEN) ED2017-68 CPM2017-111 LQE2017-81 |
[more] | ED2017-68 CPM2017-111 LQE2017-81 pp.91-94 |
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