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Technical Committee on Electron Devices (ED) (Searched in: 2011)
Search Results: Keywords 'from:2012-01-11 to:2012-01-11'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2012-01-11 10:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Microwave Power Beaming Experiments in Tronto and Hawaii for the Solar Power Satellite Nobuyuki Kaya, Masashi Iwashita (Kobe Univ.)  ED2011-119 MW2011-142 |
[more] | ED2011-119 MW2011-142 pp.1-6 |
| ED, MW | 2012-01-11 10:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A Fundamental Study on Super Thin One-Layered Wave Absorber Using a High Dielectric Loss Material in Microwave Band Takato Fujita, Yuki Tsuda, Takenori Yasuzumi, Osamu Hashimoto (Aoyama Gakuin Univ.), Takashi Wano, Yuuki Fukuda (NITTO Denko LTD.) ED2011-120 MW2011-143 |
In this paper, the fabrication of a super thin wave absorber using a dielectric loss material was studied.Firstly, the r... [more] | ED2011-120 MW2011-143 pp.7-12 |
| ED, MW | 2012-01-11 11:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A study of CMOS-technology-based millimeterwave LPF/HPF/BPF with transmission zeros by using coupled-line and transmission line Kosei Tanii (UEC), Mitsuo Makimoto (Sakura Tech), Sadao Igarashi, Kuniaki Fukui, Kouichi Kobinata (RF Chips), Koji Wada (UEC) ED2011-121 MW2011-144 |
In this study, the conditions for realizing transmission zeros of millimeter-wave LPF/HPF using coupled line and transmi... [more] | ED2011-121 MW2011-144 pp.13-18 |
| ED, MW | 2012-01-11 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Design of a Quasi-Millimeter-Wave Bandpass Filter Using Multilayered SIW Dual-Mode Resonators Kazuya Tobita, Zhewang Ma, Masataka Ohira (Saitama Univ.) ED2011-122 MW2011-145 |
A novel compact quasi-millimeter-wave bandpass filter is designed by using multilayered SIW dual-mode resonators. As hig... [more] | ED2011-122 MW2011-145 pp.19-24 |
| ED, MW | 2012-01-11 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Band Broadening of Waveguide/Microstrip-line Transformer for Millimeter-wave Band Toshitatsu Suzuki, Yozo Utsumi, Noboru Morita, Takefumi Hiraguri (Nippon Inst. of Tech.), Munehiro Yokota, Toshihisa Kamei (NDA), Kiyozumi Chino, Ikurou Aoki, Hirosuke Suzuki (KEYCOM) ED2011-123 MW2011-146 |
This paper reports prototype waveguide / microstrip-line / waveguide transformers (two times transformation) for 50ͨ... [more] | ED2011-123 MW2011-146 pp.25-30 |
| ED, MW | 2012-01-11 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A System Design Method for Direct Sampling WLAN Receiver Noriaki Saito, Yohei Morishita, Tadashi Morita (Panasonic) ED2011-124 MW2011-147 |
A baseband analog filter occupies large area in the receiver block, due to the low frequency. There are two methods to s... [more] | ED2011-124 MW2011-147 pp.31-34 |
| ED, MW | 2012-01-11 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Photon-recycling GaN p+n Diodes Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) ED2011-125 MW2011-148 |
Photon recycling was used to increase ionization of Mg in GaN p+n diodes by reducing anode radius down to 20 microns. Th... [more] | ED2011-125 MW2011-148 pp.35-40 |
| ED, MW | 2012-01-11 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Modeling and predistortion for harmonic distortion in wideband amplifier Nhu Quyen Duong, Kiyomichi Araki (Tokyo Tech), Takayuki Yamada, Takana Kaho, Yo Yamaguchi (NTT) |
[more] | |
| ED, MW | 2012-01-11 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Distortion Compensation of Class-E Power Amplifier Modulating Envelope Pulse Width for Quadrature Amplitude Modulation Signal Shota Fujioka, Yohtaro Umeda (Tokyo Univ. of Sience), Osamu Takyu (Shinshu Univ.) ED2011-126 MW2011-149 |
Transmitter in wireless communication is required to be efficient, linearity, low distortion. Envelope Pulse Width Modul... [more] | ED2011-126 MW2011-149 pp.41-46 |
| ED, MW | 2012-01-11 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Multi-stage Balanced RF Rectifier Circuit Kota Yamada, Takashi Arakawa, Masamune Takeda, Jun Uemura (Maspro), Kunio Sakakibara, Nobuyoshi Kikuma (Nagoya Inst. of Tech.), Takashi Ohira (Toyohashi Univ. Tech.) ED2011-127 MW2011-150 |
High-efficiency rectifier circuits are getting expected for use in a variety of emerging RF applications such as wireles... [more] | ED2011-127 MW2011-150 pp.47-52 |
| ED, MW | 2012-01-11 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | [Special Talk]
Simply Structured Spaces and Vector Potentials Kaneyuki Kurokawa (Former Fujitsu Lab.) ED2011-128 MW2011-151 |
Many textbooks claim that a divergence-free vector function is the curl of another vector function． This report clarifie... [more] | ED2011-128 MW2011-151 pp.53-58 |
| ED, MW | 2012-01-12 10:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Study of source charging time in InGaAs MOSFET Yasuyuki Miyamoto, Masayuki Yamada, Ken Uchida (Tokyo Tech) ED2011-129 MW2011-152 |
When ballistic transportation of electrons in the channel of MOSFET is realized by channel shrinkage, drain current is c... [more] | ED2011-129 MW2011-152 pp.59-62 |
| ED, MW | 2012-01-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] | ED2011-130 MW2011-153 pp.63-68 |
| ED, MW | 2012-01-12 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-131 MW2011-154 |
High-order multi-level modulation formats, such as 16-QAM and 64-QAM, are promising techniques for constructing beyond-1... [more] | ED2011-131 MW2011-154 pp.69-74 |
| ED, MW | 2012-01-12 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-132 MW2011-155 |
Two basic components for high-speed and low-power applications, a static frequency divider and decision circuit, have be... [more] | ED2011-132 MW2011-155 pp.75-79 |
| ED, MW | 2012-01-12 12:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2011-133 MW2011-156 |
In this work, we perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a sho... [more] | ED2011-133 MW2011-156 pp.81-85 |
| ED, MW | 2012-01-12 13:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence Amalraj Frank Wilson, Akio Wakejima, Takashi Egawa (Nagoya Inst. of Tech.) ED2011-134 MW2011-157 |
[more] | ED2011-134 MW2011-157 pp.87-90 |
| ED, MW | 2012-01-12 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High temperature device characteristics of AlGaN-Channel HEMTs Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) ED2011-135 MW2011-158 |
We fabricated AlGaN-channel HEMT on a free-standing AlN substrate and estimated their electron transport properties at t... [more] | ED2011-135 MW2011-158 pp.91-95 |
| ED, MW | 2012-01-12 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures Yujin Hori, Sungsik Kim (Hokkaido Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2011-136 MW2011-159 |
[more] | ED2011-136 MW2011-159 pp.97-100 |
| ED, MW | 2012-01-12 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160 |
[more] | ED2011-137 MW2011-160 pp.101-105 |
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