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Technical Committee on Electron Devices (ED) (Searched in: 2007)
Search Results: Keywords 'from:2007-10-11 to:2007-10-11'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2007-10-11 13:05 |
Fukui | Fukui Univ. | Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations Atsushi Yamaguchi (Kanazawa Inst. of Technology)  ED2007-156 CPM2007-82 LQE2007-57 |
Polarization properties in III-nitride quantum wells with various substrate orientations have been investigated theoreti... [more] | ED2007-156 CPM2007-82 LQE2007-57 pp.1-6 |
| CPM, ED, LQE | 2007-10-11 13:30 |
Fukui | Fukui Univ. | Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-157 CPM2007-83 LQE2007-58 |
The micro photoluminescence (PL) and micro time-resolved PL spectroscopy have been performed on a single InGaN/GaN nanoc... [more] | ED2007-157 CPM2007-83 LQE2007-58 pp.7-12 |
| CPM, ED, LQE | 2007-10-11 13:55 |
Fukui | Fukui Univ. | Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-158 CPM2007-84 LQE2007-59 |
GaN nanocolumns have excellent optical characteristics due to islocation-free nature. GaN/AlGaN nanocolumn LEDs grown on... [more] | ED2007-158 CPM2007-84 LQE2007-59 pp.13-17 |
| CPM, ED, LQE | 2007-10-11 14:30 |
Fukui | Fukui Univ. | Fabrication of GaN-based UV LEDs with metal, oxide and GaN stacks Shigetoshi Komiyama, Kazuyuki Noguchi, Yoshihiro Mashiyama, Kaori Yoshioka, Tohru Honda (Kogakuin Univ.) |
[more] | |
| CPM, ED, LQE | 2007-10-11 14:55 |
Fukui | Fukui Univ. | High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.) ED2007-159 CPM2007-85 LQE2007-60 |
Ultraviolet Light Emitting Diodes (UV-LEDs) are promising for various applications such as photocatalyst or excitation s... [more] | ED2007-159 CPM2007-85 LQE2007-60 pp.19-23 |
| CPM, ED, LQE | 2007-10-11 15:20 |
Fukui | Fukui Univ. | Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED
-- Moisture control in NH3 gas for MOVPE growth of LED structure -- Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO) ED2007-160 CPM2007-86 LQE2007-61 |
[more] | ED2007-160 CPM2007-86 LQE2007-61 pp.25-28 |
| CPM, ED, LQE | 2007-10-11 15:45 |
Fukui | Fukui Univ. | 340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN) ED2007-161 CPM2007-87 LQE2007-62 |
[more] | ED2007-161 CPM2007-87 LQE2007-62 pp.29-34 |
| CPM, ED, LQE | 2007-10-11 16:20 |
Fukui | Fukui Univ. | Characteristics of polarized emission from nonpolar m-plane InGaN-based LEDs Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, Hiroaki Ohta (Rohm Co., Ltd.) |
[more] | |
| CPM, ED, LQE | 2007-10-11 16:45 |
Fukui | Fukui Univ. | Suppression of COD in pure-blue Lasers with current injecition-free region near the laser facet. Osamu Goto (Sony), Yoshitsugu Ohizumi, Miwako Shouji, Takayuki Tanaka, Yukio Hoshina, Makoto Ohta (Sony Shiroishi Semiconductor Inc.), Yoshifumi Yabuki, Shigetaka Tomiya, Masao Ikeda (Sony) ED2007-162 CPM2007-88 LQE2007-63 |
[more] | ED2007-162 CPM2007-88 LQE2007-63 pp.35-37 |
| CPM, ED, LQE | 2007-10-11 17:10 |
Fukui | Fukui Univ. | Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.) ED2007-163 CPM2007-89 LQE2007-64 |
AlGaN wide-gap semiconductor is promising for UV to Deep-UV laser and light emitting diodes. The AlGaN has optical aniso... [more] | ED2007-163 CPM2007-89 LQE2007-64 pp.39-42 |
| CPM, ED, LQE | 2007-10-11 17:35 |
Fukui | Fukui Univ. | UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65 |
For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which w... [more] | ED2007-164 CPM2007-90 LQE2007-65 pp.43-46 |
| CPM, ED, LQE | 2007-10-12 09:00 |
Fukui | Fukui Univ. | Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui) ED2007-165 CPM2007-91 LQE2007-66 |
We have theoretically analyzed the electric field distribution for multi-step and graded Field Plate (FP) AlGaN/GaN HEMT... [more] | ED2007-165 CPM2007-91 LQE2007-66 pp.47-52 |
| CPM, ED, LQE | 2007-10-12 09:25 |
Fukui | Fukui Univ. | Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67 |
GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field ... [more] | ED2007-166 CPM2007-92 LQE2007-67 pp.53-56 |
| CPM, ED, LQE | 2007-10-12 09:50 |
Fukui | Fukui Univ. | Low leakage current ITO schottky electrode for AlGaN/GaN HEMT Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68 |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] | ED2007-167 CPM2007-93 LQE2007-68 pp.57-61 |
| CPM, ED, LQE | 2007-10-12 10:15 |
Fukui | Fukui Univ. | Study on AlGaN/GaN HEMT structures on 4-inch Si (111) substrates with thick buffer layers Yutaka Terada, Takaaki Suzue, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.) ED2007-168 CPM2007-94 LQE2007-69 |
[more] | ED2007-168 CPM2007-94 LQE2007-69 pp.63-66 |
| CPM, ED, LQE | 2007-10-12 10:50 |
Fukui | Fukui Univ. | Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-169 CPM2007-95 LQE2007-70 |
Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are consid... [more] | ED2007-169 CPM2007-95 LQE2007-70 pp.67-72 |
| CPM, ED, LQE | 2007-10-12 11:15 |
Fukui | Fukui Univ. | Surface control of AlGaN/GaN strcutures Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71 |
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] | ED2007-170 CPM2007-96 LQE2007-71 pp.73-76 |
| CPM, ED, LQE | 2007-10-12 11:40 |
Fukui | Fukui Univ. | Theoretical study on high-frequency performance of AlInN/InGaN heterojunction FETs Kazuki Kodama, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2007-171 CPM2007-97 LQE2007-72 |
High-frequency performance of AlInN/InGaN heterojunction FETs has been theoretically studied. Analyses were made using 2... [more] | ED2007-171 CPM2007-97 LQE2007-72 pp.77-80 |
| CPM, ED, LQE | 2007-10-12 12:05 |
Fukui | Fukui Univ. | Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73 |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] | ED2007-172 CPM2007-98 LQE2007-73 pp.81-84 |
| CPM, ED, LQE | 2007-10-12 13:50 |
Fukui | Fukui Univ. | Electrical characterization of homoepitaxially-grown pn GaN diodes Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74 |
We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] | ED2007-173 CPM2007-99 LQE2007-74 pp.85-88 |
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