Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2020-01-31 09:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Phase Synchronization Technique Between Fractional-N PLLs by Correcting Phase Error due to Cycle Slip using Reference Delta-Sigma Modulator Sho Ikeda, Akihito Hirai, Koji Tsutsumi, Masaomi Tsuru (MELCO) ED2019-93 MW2019-127 |
[more] |
ED2019-93 MW2019-127 pp.1-5 |
ED, MW |
2020-01-31 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Basic study on triplexer using matching circuit consisted of lumped elements Genki Oishi, Shinpei Oshima (NIT,Oyama College) ED2019-94 MW2019-128 |
[more] |
ED2019-94 MW2019-128 pp.7-10 |
ED, MW |
2020-01-31 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Novel Sample Holder Structure for S11 Calibration via SOM and Related Application to Dielectric Measurement in Liquids via the Cut-off Waveguide Reflection Method Kouji Shibata (Hachinohe Inst. of Tech.) ED2019-95 MW2019-129 |
[more] |
ED2019-95 MW2019-129 pp.11-16 |
ED, MW |
2020-01-31 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Current Status and Perspectives of GaN HEMT Power Amplifiers for 5G Base Stations Kazutaka Inoue (SEI) ED2019-96 MW2019-130 |
[more] |
ED2019-96 MW2019-130 pp.17-20 |
ED, MW |
2020-01-31 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric) ED2019-97 MW2019-131 |
[more] |
ED2019-97 MW2019-131 pp.21-24 |
ED, MW |
2020-01-31 11:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] |
ED2019-98 MW2019-132 pp.25-28 |
ED, MW |
2020-01-31 13:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
Briefing Report on European Microwave Week 2019 Masatake Hangai (Mitsubishi Electric Co.), Kenjiro Nishikawa (Kagoshima Univ.), Kenji Mukai (Murata Manufacturing Co.), Motomi Abe, Yusuke Kitsukawa, Ryota Komaru, Shuichi Sakata, Jun Kamioka, Shinya Yokomizo (Mitsubishi Electric Co.) ED2019-99 MW2019-133 |
The European Microwave Week 2019, comprising the European Microwave Conference (EuMC), European Integrated Circuits Conf... [more] |
ED2019-99 MW2019-133 pp.29-34 |
ED, MW |
2020-01-31 14:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
An Accurate and Fast Permittivity Measurement System for Terahertz imaging Teruo Jyo, Hiroshi Hamada, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) ED2019-100 MW2019-134 |
THz permittivity imaging using phase information is an effective solution for detecting non-metallic matter and is expec... [more] |
ED2019-100 MW2019-134 pp.35-40 |
ED, MW |
2020-01-31 14:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
Scattering Suppression by a Near-Zero-Index Metamaterial of Periodic Dielectric Spheres Yuma Takano, Atsushi Sanada (Osaka Univ.) ED2019-101 MW2019-135 |
(To be available after the conference date) [more] |
ED2019-101 MW2019-135 pp.41-45 |
ED, MW |
2020-01-31 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
Maximum Achievable Efficiency of Multiple-Input Multiple-Output Inductive Power Transfer Systems Quang-Thang Duong, Minoru Okada (NAIST) ED2019-102 MW2019-136 |
[more] |
ED2019-102 MW2019-136 pp.47-51 |
ED, MW |
2020-01-31 15:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) ED2019-103 MW2019-137 |
[more] |
ED2019-103 MW2019-137 p.53 |
ED, MW |
2020-01-31 16:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki (Tohoku Univ.), Teramoto Akinobu (Hiroshima Univ.), Shirota Riichiro, Tskatani Shinichiro (NCTU), Kuroda Rihito, Sugawa Shigetoshi (Tohoku Univ.) ED2019-104 MW2019-138 |
We report a GaN HEMT (High Electron Mobility Transistor) with floating gate, that has an additional injection gate for c... [more] |
ED2019-104 MW2019-138 pp.55-58 |
ED, MW |
2020-01-31 16:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139 |
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] |
ED2019-105 MW2019-139 pp.59-64 |