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Technical Committee on Electron Devices (ED) (Searched in: 2014)
Search Results: Keywords 'from:2014-08-01 to:2014-08-01'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2014-08-01 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.)  ED2014-53 |
We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection... [more] | ED2014-53 pp.1-6 |
| ED | 2014-08-01 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | The Theoretical Characteristic and its Experimental Verification of GaAsSb/InGaAs Double-Gate Tunnel FET Kazumi Ohashi, Motohiko Fujimatsu, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) ED2014-54 |
Tunnel FETs are attracted candidates as switching devices for the next generation. In the Tunnel FETs, steep Sub-thresho... [more] | ED2014-54 pp.7-11 |
| ED | 2014-08-01 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Analysis of effects of dislocation scattering on device characteristics of InSb HEMT Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55 |
To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the di... [more] | ED2014-55 pp.13-18 |
| ED | 2014-08-01 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
InGaAs MOSFET Source Structures Toward High Speed/low Power Applications Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) ED2014-56 |
Abstract High on-currents (I_{on}) and low off-currents (I_{off}) under low supply voltage are important for logic appli... [more] | ED2014-56 pp.19-24 |
| ED | 2014-08-01 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS) ED2014-57 |
III-V semiconductors have attracted much attention as promising n-type channel materials for the future logic device to ... [more] | ED2014-57 pp.25-28 |
| ED | 2014-08-01 14:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT Katsuhiko Takeuchi, Satoshi Taniguchi, Masashi Yanagita (Sony), Yuji Sasaki, Mitsuhiro Nakamura (Sony Semiconductor), Shinichi Wada (Sony) ED2014-58 |
Due to its low insertion loss and the high linearity, the JPHEMT is widely used for RF switches in wireless communicatio... [more] | ED2014-58 pp.29-34 |
| ED | 2014-08-01 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Fabrication of Carbon nanotube TFT for sheet electronic device by printing method. Hiroyuki Endoh, Noriyuki Tonouchi, Fumiyuki Nihey (NEC Corp.), Tsuyoshi Sekitani, Takao Someya (Univ.of Tokyo) ED2014-59 |
For pressure-sensing sheet, carbon nanotube(CNT) thin-film transistor(TFT) arrays were fabricated using the printed-proc... [more] | ED2014-59 pp.35-40 |
| ED | 2014-08-01 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] | ED2014-60 pp.41-46 |
| ED | 2014-08-01 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | HAXPES Analysis for GaAs Surface State for Electronics Devices Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI) ED2014-61 |
Abstract The surface states of GaAs have been characterized, by using the hard x-ray photoemission spectroscopy (HAXPES)... [more] | ED2014-61 pp.47-50 |
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