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Technical Committee on Electron Devices (ED)  (Searched in: 2013)

Search Results: Keywords 'from:2014-01-16 to:2014-01-16'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 24  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2014-01-16
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] A Simple Broadband Two-stage Common Source Amplifier Using Stabilization Circuit
Takeshi Kondo, Takeru Sameshima (Saga Univ.) ED2013-109 MW2013-174
In this paper, a broadband amplifier designed and fabricated for Microwave Circuit Design Universide 2013 is reported. T... [more] ED2013-109 MW2013-174
pp.1-4
ED, MW 2014-01-16
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] FR4-Substrate-Fabricated and Small-Sized Broadband Microwave Amplifier
Takanari Minami, Takashi Ohira (Toyohashi Univ. of Tech.) ED2013-110 MW2013-175
This paper presents design and fabrication of a broadband microwave amplifier for Microwave Circuit Design Universiade 2... [more] ED2013-110 MW2013-175
pp.5-8
ED, MW 2014-01-16
09:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] Small-Size Broadband Two-Stage Common Source Amplifier
Tatsuki Matsunaga, Atsushi Maeda, Takeshi Kondo (Saga Univ.) ED2013-111 MW2013-176
In this paper, a small size broadband two-stage common source amplifier designed for Microwave Circuit Design Universiad... [more] ED2013-111 MW2013-176
pp.9-13
ED, MW 2014-01-16
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] Broadband 2-stage amplifier suppressing effects of bias circuit by using resistor
Shuhei Yoshikawa, Toshio Ishizaki (Ryukoku Univ.) ED2013-112 MW2013-177
An experimental broadband amplifier was designed and fabricated for the student microwave circuit design contest 2013. S... [more] ED2013-112 MW2013-177
pp.15-18
ED, MW 2014-01-16
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] Broadband two-stage amplifier design based on high-precision modeling of parasitic components for circuit implementation
Yuichi Sawahara, Toshio Ishizaki (Ryukoku Univ.) ED2013-113 MW2013-178
We fabricated a broadband two-stage amplifier using high-frequency transistors with resin package. Instability of electr... [more] ED2013-113 MW2013-178
pp.19-24
ED, MW 2014-01-16
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. Novel Millimeter-wave PLL Synthesizer with Cascaded Phase Detectors
Hiroshi Matsumura, Yoichi Kawano, Masaru Sato, Takenori Ohshima, Toshihiro Shimura, Toshihide Suzuki, Yoji Ohashi (Fujitsu), Naoki Hara (Fujitsu Lab.) ED2013-114 MW2013-179
We present a novel millimeter-wave PLL architecture with cascaded phase detectors. It realizes low phase noise and low s... [more] ED2013-114 MW2013-179
pp.25-28
ED, MW 2014-01-16
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) ED2013-115 MW2013-180
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] ED2013-115 MW2013-180
pp.29-33
ED, MW 2014-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation
Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] ED2013-116 MW2013-181
pp.35-39
ED, MW 2014-01-16
12:10
Tokyo Kikai-Shinko-Kaikan Bldg. Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs
Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182
A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility ... [more] ED2013-117 MW2013-182
pp.41-45
ED, MW 2014-01-16
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. 2D Device Simulation of AlGaN/GaN HFETs Side-Gating Effect
Yusuke Ikawa (Univ. of Tokushima), Keunsam Lee (Nihon Synopsys), Jin-Ping Ao (Univ. of Tokushima), Yasuo Ohno (e-Device) ED2013-118 MW2013-183
 [more] ED2013-118 MW2013-183
pp.47-52
ED, MW 2014-01-16
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. A Dual-Band Reflection Type Phase Shifter Using Active Loads
Yuki Shoji, Kazuyoshi Sakamoto, Yasushi Itoh (Shonan Inst. of Tech.) ED2013-119 MW2013-184
A dual-band reflection type phase shifter using active loads is presented for realizing a wide phase-shifting range and ... [more] ED2013-119 MW2013-184
pp.53-56
ED, MW 2014-01-16
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A Stopband-Tunable Dual-Band Low-Noise Differential Amplifier
Kazuyoshi Sakamoto, Yuki Shoji, Yasushi Itoh (Shonan Inst. of Tech.) ED2013-120 MW2013-185
A stopband-tunable dual-band low-noise differential amplifier has been developed for the next generation adaptive and/or... [more] ED2013-120 MW2013-185
pp.57-60
ED, MW 2014-01-16
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. Study on electrically coupled resonators for WPT system
Yuichi Sawahara, Toshio Ishizaki (Ryukoku Univ.), Ikuo Awai (Ryutech) ED2013-121 MW2013-186
Wireless power transfer systems have attracted much attention recently, research and development as well as product desi... [more] ED2013-121 MW2013-186
pp.61-66
ED, MW 2014-01-16
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. 209mW 11Gbps 130GHz CMOS Transceiver for Indoor Wireless Communication
Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Chenyan Li, Minoru Fujishima (Hiroshima Univ.) ED2013-122 MW2013-187
 [more] ED2013-122 MW2013-187
pp.67-71
ED, MW 2014-01-16
16:20
Tokyo Kikai-Shinko-Kaikan Bldg. 2.4GHz Band Rectenna with The Miniaturized Bridge Rectifier
Kohei Hosodani, Motoki Itoh, Kenji Itoh, Shin-ichi Betsudan, Shigeru Makino, Tetsuo Hirota, Keisuke Noguchi (Kanazawa Inst. of Tech.), Eiji Taniguchi (Mitsubishi Electric) ED2013-123 MW2013-188
 [more] ED2013-123 MW2013-188
pp.73-78
ED, MW 2014-01-17
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] ED2013-124 MW2013-189
pp.79-84
ED, MW 2014-01-17
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. Blind Nonlinear Comepensation Technique for RF Receiver Front-End
Yuelin Ma, Yasushi Yamao (Univ. of Electro-Comm.) ED2013-125 MW2013-190
 [more] ED2013-125 MW2013-190
pp.85-90
ED, MW 2014-01-17
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. A basic study on RF-DC converter with multi-antennas
Yoichi Yoshida, Koichi Nose (Renesas Electronics)
 [more]
ED, MW 2014-01-17
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. A Linear Array of Transverse Slots without Cross-polarization on a Hollow Rectangular Waveguide in the 120-GHzBand
Duong Nhu Quyen, Makoto Sano, Jiro Hirokawa, Makoto Ando (Tokyo Inst. of Tech.), Jun Takeuchi, Akihiko Hirata (NTT) ED2013-126 MW2013-191
 [more] ED2013-126 MW2013-191
pp.91-96
ED, MW 2014-01-17
11:25
Tokyo Kikai-Shinko-Kaikan Bldg. 120-GHz-band 10-Gbit/s Fully-integrated Wireless Equipment using QPSK Transmitter and Receiver based on InP HEMT MMICs
Hiroyuki Takahashi, Jun Takeuchi, Akihiko Hirata (NTT) ED2013-127 MW2013-192
 [more] ED2013-127 MW2013-192
pp.97-102
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