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Technical Committee on Electron Devices (ED)  (Searched in: 2013)

Search Results: Keywords 'from:2013-08-08 to:2013-08-08'
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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2013-08-08
14:00		 Toyama University of Toyama Ultrashort Pulse Generators Using Resonant Tunneling Diodes with Improved Power Performance
Dongpo Wu, Katsutaro Mizumaki, Jie Pan, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-37		 RTD pulse generators were designed and fabricated for improved power performance. 10-ps class pulse width with higher pe... [more] ED2013-37
pp.1-4
ED 2013-08-08
14:25		 Toyama University of Toyama Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps
Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-38		 Fluidic Self-Assembly (FSA) using molten metal bumps is one of the most promising Heterogeneous Integration (HI) technol... [more] ED2013-38
pp.5-8
ED 2013-08-08
14:50		 Toyama University of Toyama Dynamics of edge oscillation in a transmission line loaded with regularly spaced tunnel diodes
Koichi Narahara (Yamagata Univ.) ED2013-39		  [more] ED2013-39
pp.9-13
ED 2013-08-08
15:30		 Toyama University of Toyama [Invited Talk] Analysis of GaN-based metal-insulator-semiconductor devices by capacitance-frequency-temperature mapping
Toshi-kazu Suzuki, Hong-An Shih, Masahiro Kudo (JAIST) ED2013-40		  [more] ED2013-40
pp.15-18
ED 2013-08-08
16:20		 Toyama University of Toyama Application of sputtering-deposited BN films to AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Yuji Yamamoto, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST) ED2013-41		  [more] ED2013-41
pp.19-23
ED 2013-08-08
16:45		 Toyama University of Toyama On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals
Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara (Univ of Fukui) ED2013-42		  [more] ED2013-42
pp.25-28
ED 2013-08-08
17:10		 Toyama University of Toyama Characterization of Al2O3/ n-Ga2O3 MOS diodes
Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki (Tamura Corp.), Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2013-43		  [more] ED2013-43
pp.29-32
ED 2013-08-09
09:00		 Toyama University of Toyama MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors
Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44		 This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] ED2013-44
pp.33-36
ED 2013-08-09
09:25		 Toyama University of Toyama Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45		 GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] ED2013-45
pp.37-42
ED 2013-08-09
09:50		 Toyama University of Toyama Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions
Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science) ED2013-46		 Gallium antimonide (GaSb) nanostructures on Si (Silicon) have been intensely studied due to the application as a near-in... [more] ED2013-46
pp.43-48
ED 2013-08-09
10:30		 Toyama University of Toyama Sub-band transport and quantum Hall effect in InGaAs two-dimensional electron gas bilayer system
Shiro Hidaka, Hiuma Iwase, Masashi Akabori, Syoji Yamada (JAIST), Yasutaka Imanaka, Tadashi Takamasu (NIMS) ED2013-47		  [more] ED2013-47
pp.49-53
ED 2013-08-09
10:55		 Toyama University of Toyama Fabrication and electrical characterization of in-plane-oriented InAs nanowires by selective area molecular beam epitaxy on GaAs
Masashi Akabori, Tatsuya Murakami, Syoji Yamada (JAIST) ED2013-48		  [more] ED2013-48
pp.55-59
ED 2013-08-09
11:20		 Toyama University of Toyama Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction
Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49		 Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] ED2013-49
pp.61-65
 Results 1 - 13 of 13  /   
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