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Technical Committee on Component Parts and Materials (CPM)  (Searched in: 2010)

Search Results: Keywords 'from:2010-11-11 to:2010-11-11'
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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 17 of 17  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2010-11-11
10:00		 Osaka   Optical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction
Hitoshi Miura, Takashi Otani, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagaoka Univ. Technol.) ED2010-142 CPM2010-108 LQE2010-98		  [more] ED2010-142 CPM2010-108 LQE2010-98
pp.1-6
CPM, LQE, ED 2010-11-11
10:25		 Osaka   Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE
Tsutomu Araki, Keisuke Kawashima, Tomohiro Yamaguchi, Yasushi Nanishi (Ritsumeikan Univ.) ED2010-143 CPM2010-109 LQE2010-99		  [more] ED2010-143 CPM2010-109 LQE2010-99
pp.7-10
CPM, LQE, ED 2010-11-11
10:50		 Osaka   GaN growth on pseudo (111)Al substrates by RF-MBE
Tohru Honda, Masato Hayashi, Taiga Goto, Tatsuhiro Igaki (Kogakuin Univ.) ED2010-144 CPM2010-110 LQE2010-100		 Fabrication of integrated light-emitting devices based on GaN requires a vertical carrier injection. In the case, GaN gr... [more] ED2010-144 CPM2010-110 LQE2010-100
pp.11-14
CPM, LQE, ED 2010-11-11
11:15		 Osaka   Growth characteristics of GaNP layer and InAs-based QDs on Si substrate
Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Kosuke Nemoto, Tomoyuki Miyamoto (Tokyo Inst. of Tech.) ED2010-145 CPM2010-111 LQE2010-101		 In this report, we investigate the basic property of the GaNP layer and the InAs-based quantum dots grown on Si substrat... [more] ED2010-145 CPM2010-111 LQE2010-101
pp.15-19
CPM, LQE, ED 2010-11-11
13:00		 Osaka   AlN growth on SiC by LP-HVPE
Kenta Okumura, Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Osamu Eryu (NIT) ED2010-146 CPM2010-112 LQE2010-102		  [more] ED2010-146 CPM2010-112 LQE2010-102
pp.21-24
CPM, LQE, ED 2010-11-11
13:25		 Osaka   ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE
Kohei Fujita, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken) ED2010-147 CPM2010-113 LQE2010-103		  [more] ED2010-147 CPM2010-113 LQE2010-103
pp.25-28
CPM, LQE, ED 2010-11-11
13:50		 Osaka   Fabrication and characterization of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation
Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HPK) 		 [more]
CPM, LQE, ED 2010-11-11
14:30		 Osaka   A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells
Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.) ED2010-148 CPM2010-114 LQE2010-104		 A new method to obtain material parameters inversely from measured polarization properties has been developed, and we an... [more] ED2010-148 CPM2010-114 LQE2010-104
pp.29-32
CPM, LQE, ED 2010-11-11
14:55		 Osaka   Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy -- Efficiency droop mechanism assessed by SNOM --
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2010-149 CPM2010-115 LQE2010-105		 The temporally and spatially resolved photoluminescence (PL) mappings under the various carrier densities have been perf... [more] ED2010-149 CPM2010-115 LQE2010-105
pp.33-36
CPM, LQE, ED 2010-11-11
15:20		 Osaka   100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping
Takao Oto, Ryan G. Banal (Kyoto Univ.), Ken Kataoka (Ushio Inc.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2010-150 CPM2010-116 LQE2010-106		 The external quantum efficiencies of AlGaN-based deep ultraviolet light emitting diodes are less than 5%, due to the cau... [more] ED2010-150 CPM2010-116 LQE2010-106
pp.37-40
CPM, LQE, ED 2010-11-11
15:45		 Osaka   High Efficiency AlInN Ultraviolet Photodiodes on AlN Template
Yusuke Sakai, Junki Ichikawa, Takashi Egawa (Nagoya Inst. of Tech.) ED2010-151 CPM2010-117 LQE2010-107		 We characterize AlInN/GaN structures on AlN templates grown by metal organic chemical vapor deposition and demonstrate S... [more] ED2010-151 CPM2010-117 LQE2010-107
pp.41-45
CPM, LQE, ED 2010-11-11
16:25		 Osaka   Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108		 We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has ... [more] ED2010-152 CPM2010-118 LQE2010-108
pp.47-50
CPM, LQE, ED 2010-11-11
16:50		 Osaka   High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109		  [more] ED2010-153 CPM2010-119 LQE2010-109
pp.51-54
CPM, LQE, ED 2010-11-12
10:00		 Osaka   Characterization of insulated gates on GaN and AlGaN/GaN structures
Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.) ED2010-154 CPM2010-120 LQE2010-110		 We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures us... [more] ED2010-154 CPM2010-120 LQE2010-110
pp.55-58
CPM, LQE, ED 2010-11-12
10:25		 Osaka   Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111		 We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] ED2010-155 CPM2010-121 LQE2010-111
pp.59-62
CPM, LQE, ED 2010-11-12
10:50		 Osaka   Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112		 We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] ED2010-156 CPM2010-122 LQE2010-112
pp.63-66
CPM, LQE, ED 2010-11-12
11:15		 Osaka   Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113		 A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] ED2010-157 CPM2010-123 LQE2010-113
pp.67-70
 Results 1 - 17 of 17  /   
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