Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, ED, SDM |
2016-05-19 13:00 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Fabrication of CVD single-layer graphene diaphragm above a nano cavity by dry transfer technique Hayato Ishida, Makoto Ishida (Toyohashi Tech.), Kazuaki Sawada, Kazuhiro Takahashi (Toyohashi Tech./EIIRIS) ED2016-13 CPM2016-1 SDM2016-18 |
Recent research on a technique for transferring a CVD graphene on any substrate has been actively conducted. In this wor... [more] |
ED2016-13 CPM2016-1 SDM2016-18 pp.1-4 |
CPM, ED, SDM |
2016-05-19 13:25 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Synthesis of graphenes on metal alloy substrates by thermal chemical vapor deposition Naoki Kishi, Kazuki Iwama, Takuya Mizutani, Shinya Kato, Tetsuo Soga (NITech) ED2016-14 CPM2016-2 SDM2016-19 |
The number of layers and quality of graphenes synthesized by chemical vapor deposition (CVD) depends on the type of meta... [more] |
ED2016-14 CPM2016-2 SDM2016-19 pp.5-8 |
CPM, ED, SDM |
2016-05-19 13:50 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
ZnO nanostructures for the fabrication of photoanode towards energy applications Mani Navaneethan, Jayaram Archana, Santhana Harish, Tadanobu Koyama, Hiroya Ikeda, Yasuhiro Hayakawa (Shizuoka Univ.) ED2016-15 CPM2016-3 SDM2016-20 |
[more] |
ED2016-15 CPM2016-3 SDM2016-20 pp.9-14 |
CPM, ED, SDM |
2016-05-19 14:15 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Thermoelectric characteristics of flexible material with ZnO nanostructures Masaya Wanami, Selvaraj Shanthi, Yuhei Suzuki, Veluswamy Pandiyarasan (Shizuoka Univ.), Faiz Salleh (Univ. Malaya), Masaru Shimomura, Kenji Murakami, Hiroya Ikeda (Shizuoka Univ.) ED2016-16 CPM2016-4 SDM2016-21 |
For high-efficiency wearable power generator, we have investigated the ZnO nanostructures grown on cotton fabric (CF) as... [more] |
ED2016-16 CPM2016-4 SDM2016-21 pp.15-18 |
CPM, ED, SDM |
2016-05-19 15:00 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.) ED2016-17 CPM2016-5 SDM2016-22 |
[more] |
ED2016-17 CPM2016-5 SDM2016-22 pp.19-23 |
CPM, ED, SDM |
2016-05-19 15:25 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Rectenna circuits with diamond Schottky barrier diodes Naoto Kawano, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) ED2016-18 CPM2016-6 SDM2016-23 |
[more] |
ED2016-18 CPM2016-6 SDM2016-23 pp.25-28 |
CPM, ED, SDM |
2016-05-19 15:50 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Fabrication of a thin plasmonic color sheet embedded with Al subwavelength gratings in parylene Hayato Kumagai (Toyohashi Univ.), Hiroaki Honma (Toyohashi Univ./JSPS), Makoto Ishida, Kazuaki Sawada (Toyohashi Univ./EIIRIS), Kazuhiro Takahashi (Toyohashi Univ.) ED2016-19 CPM2016-7 SDM2016-24 |
We fabricated a free-standing thin plasmonic color sheet embedded with Al subwavelength gratings for flexible optical tr... [more] |
ED2016-19 CPM2016-7 SDM2016-24 pp.29-34 |
CPM, ED, SDM |
2016-05-19 16:15 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Fabrication of magnetophotonic crystal having cerium substituted yttrium iron garnet for using at near-infrared wavelength Takuya Yoshimoto, Taichi Goto, Hiroyuki Takagi, Yuichi Nakamaura, Hironaga Uchida, Mitsuteru Inoue (TUT) ED2016-20 CPM2016-8 SDM2016-25 |
Tantalum oxide based composite with yttria (Y-Ta-O) films were fabricated on synthetic fused silica substrates to invest... [more] |
ED2016-20 CPM2016-8 SDM2016-25 pp.35-38 |
CPM, ED, SDM |
2016-05-20 09:30 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Chemical solution deposition of SnS thin films using EDTA as complexing agent Yusaku Kanda, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.) ED2016-21 CPM2016-9 SDM2016-26 |
Tin sulfide, SnS has been deposited on glass using chemical bath deposition (CBD). SnS glows on glasses in a solution wi... [more] |
ED2016-21 CPM2016-9 SDM2016-26 pp.39-42 |
CPM, ED, SDM |
2016-05-20 09:55 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method Bayingaerdi Tong, Masaya Ichimura (NITech) ED2016-22 CPM2016-10 SDM2016-27 |
Zn-rich of CuxZnyS is a transparent p-type semiconductor. We prepared the CuxZnyS thin films by the photochemical deposi... [more] |
ED2016-22 CPM2016-10 SDM2016-27 pp.43-46 |
CPM, ED, SDM |
2016-05-20 10:20 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto (TokyoTech) ED2016-23 CPM2016-11 SDM2016-28 |
[more] |
ED2016-23 CPM2016-11 SDM2016-28 pp.47-50 |
CPM, ED, SDM |
2016-05-20 11:05 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2016-24 CPM2016-12 SDM2016-29 |
The heteroepitaxial growth of GaSb films via Ga-induced surface phase (Si(111)-√3×√3-Ga) on Si(111) was studied. The gro... [more] |
ED2016-24 CPM2016-12 SDM2016-29 pp.51-54 |
CPM, ED, SDM |
2016-05-20 11:30 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Gravity effect on the properties of InxGa1-xSb ternary alloys grown at the International Space Station Velu NirmalKumar (Shizuoka Univ), Mukannan Arivanandhan (Anna Univ), Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose (Shizuoka Univ), Kaoruho Sakata (Univ.Tokyo), Tetsuo Ozawa (Shizuoka Insti.Sci.&Tech.), Yasunori Okano (OsakaUniv.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ) ED2016-25 CPM2016-13 SDM2016-30 |
[more] |
ED2016-25 CPM2016-13 SDM2016-30 pp.55-59 |
CPM, ED, SDM |
2016-05-20 11:55 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Interface control for III-V/Si hetero-epitaxy Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.) ED2016-26 CPM2016-14 SDM2016-31 |
This paper focuses a formation process of the first atomic layer on Si substrates for GaP/Si heteroepitaxy. It is clarif... [more] |
ED2016-26 CPM2016-14 SDM2016-31 pp.61-65 |