Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2014-11-27 10:35 |
Osaka |
|
AlN Single Crystal Growth by means of Sublimation method Yosuke Iwasaki, Shunro Nagata, Hidetoshi Akiyama, Keiichiro Nakamura (JFE MINERAL) ED2014-73 CPM2014-130 LQE2014-101 |
Aluminum Nitride (AlN) is a promising substrate material for Al-rich III-Nitride devices for use as deep ultraviolet lig... [more] |
ED2014-73 CPM2014-130 LQE2014-101 pp.1-4 |
LQE, ED, CPM |
2014-11-27 11:00 |
Osaka |
|
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102 |
Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has ... [more] |
ED2014-74 CPM2014-131 LQE2014-102 pp.5-8 |
LQE, ED, CPM |
2014-11-27 11:25 |
Osaka |
|
Critical thickness for phase separation in MOVPE-grown thick InGaN Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui) ED2014-75 CPM2014-132 LQE2014-103 |
This paper reports phase separation in thick (~1 μm) MOVPE InxGa1-xN (x = 0.2~0.4) films grown by MOVPE at 570~750℃ on A... [more] |
ED2014-75 CPM2014-132 LQE2014-103 pp.9-14 |
LQE, ED, CPM |
2014-11-27 11:50 |
Osaka |
|
Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO) ED2014-76 CPM2014-133 LQE2014-104 |
[more] |
ED2014-76 CPM2014-133 LQE2014-104 pp.15-18 |
LQE, ED, CPM |
2014-11-27 13:15 |
Osaka |
|
Emission characteristics of InGaN-MQW structures on m-plane GaN substrates Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.) ED2014-77 CPM2014-134 LQE2014-105 |
We have investigated the optical characteristics of InGaN QWs on m-plane GaN substrates in order to understand the reaso... [more] |
ED2014-77 CPM2014-134 LQE2014-105 pp.19-22 |
LQE, ED, CPM |
2014-11-27 13:40 |
Osaka |
|
Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical) ED2014-78 CPM2014-135 LQE2014-106 |
Optical polarization properties are very important factors for structural design of optoelectronic device using non- c-o... [more] |
ED2014-78 CPM2014-135 LQE2014-106 pp.23-26 |
LQE, ED, CPM |
2014-11-27 14:05 |
Osaka |
|
The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN) ED2014-79 CPM2014-136 LQE2014-107 |
We fabricated the photonic crystal in nitride LED and improved the light extraction efficiency. We also introduce the mi... [more] |
ED2014-79 CPM2014-136 LQE2014-107 pp.27-32 |
LQE, ED, CPM |
2014-11-27 14:30 |
Osaka |
|
Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.) ED2014-80 CPM2014-137 LQE2014-108 |
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] |
ED2014-80 CPM2014-137 LQE2014-108 pp.33-38 |
LQE, ED, CPM |
2014-11-27 14:55 |
Osaka |
|
Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate Yuya Kanazawa, Shiro Toyoda, Issei Ohshima (Saitama Univ./RIKEN), Norihiko Kamata (Saitama Univ.), Yukio Kashima (Marubun), Eriko Matsuura (MARUBUN), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Takashi Ohkawa, Ryuichiro Kamimura, Yamato Osada (ULVAC), Hideki Hirayama (RIKEN) ED2014-81 CPM2014-138 LQE2014-109 |
[more] |
ED2014-81 CPM2014-138 LQE2014-109 pp.39-44 |
LQE, ED, CPM |
2014-11-27 15:35 |
Osaka |
|
Hardness and Young's modulus of InN Yasushi Ohkubo, Momoto Deura (Tohoku Univ.), Yuki Tokumoto (Univ. Tokyo), Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga (Tohoku Univ.) ED2014-82 CPM2014-139 LQE2014-110 |
InN thin films of 0.5~4 μm thickness grown by plasma-assisted MBE method were investigated on the mechanical properties ... [more] |
ED2014-82 CPM2014-139 LQE2014-110 pp.45-48 |
LQE, ED, CPM |
2014-11-27 16:00 |
Osaka |
|
Crystal Growth and Magnetic Property of Cr2O3 Thin Films on LiNbO3 Substrates Takumi Nakamura, Yutaro Hayashi, Takashi Sumida, Kosuke Hashimoto, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) |
[more] |
|
LQE, ED, CPM |
2014-11-27 16:25 |
Osaka |
|
Relationship between First-Principles Studies and Experimental Results of [(CaFeO3)m/(LaFeO3)n] Superlattices about an Electric and Magnetic Structures and Properties. Takahiro Oikawa, Yuta Watabe, Takaaki Inaba, Keisuke Oshima, Huaping Song, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2014-83 CPM2014-140 LQE2014-111 |
We investigate the crystal structure of CaFeO3, LaFeO3 thin films and the DOS calculation results of [(CaFeO3)1/(LaFeO3)... [more] |
ED2014-83 CPM2014-140 LQE2014-111 pp.49-53 |
LQE, ED, CPM |
2014-11-27 16:50 |
Osaka |
|
Chiral Structure and Electric Property of Single-Walled Carbon Nanotubes Grown with Free Electron Laser Irradiation Yusaku Tsuda, Keisuke Yoshida, Daiki Kawaguchi, Tomoko Nagata, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.) |
[more] |
|
LQE, ED, CPM |
2014-11-28 09:30 |
Osaka |
|
Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-85 CPM2014-142 LQE2014-113 |
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] |
ED2014-85 CPM2014-142 LQE2014-113 pp.59-62 |
LQE, ED, CPM |
2014-11-28 09:55 |
Osaka |
|
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112 |
Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are ... [more] |
ED2014-84 CPM2014-141 LQE2014-112 pp.55-58 |
LQE, ED, CPM |
2014-11-28 10:20 |
Osaka |
|
A hybrid integrated light source on Si platform using a quantum dot laser for high temperature operation Nobuaki Hatori, Takanori Shimizu (PETRA), Makoto Okano (National Institute of Advanced Industrial Science AIST), Masashige Ishizaka, Tsuyoshi Yamamoto, Yutaka Urino (PETRA), Masahiko Mori (National Institute of Advanced Industrial Science AIST), Takahiro Nakamura (PETRA), Yasuhiko Arakawa (Univ. of Tokyo) ED2014-86 CPM2014-143 LQE2014-114 |
[more] |
ED2014-86 CPM2014-143 LQE2014-114 pp.63-68 |
LQE, ED, CPM |
2014-11-28 11:00 |
Osaka |
|
Linearly polarized nitride-based light emitting diode with multilayer subwavelength grating Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi, Yoshiki Naoi (Univ. of Tokushima) ED2014-87 CPM2014-144 LQE2014-115 |
We investigated the polarization characteristics of UV-LED with multilayer subwavelength grating. The grating structure ... [more] |
ED2014-87 CPM2014-144 LQE2014-115 pp.69-72 |
LQE, ED, CPM |
2014-11-28 11:25 |
Osaka |
|
Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN) ED2014-88 CPM2014-145 LQE2014-116 |
P-GaN free structure and highly-reflective p-type electrode are required for realizing high light-extraction efficiency ... [more] |
ED2014-88 CPM2014-145 LQE2014-116 pp.73-76 |
LQE, ED, CPM |
2014-11-28 11:50 |
Osaka |
|
Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2014-89 CPM2014-146 LQE2014-117 |
AlGaN light-emitting diodes (LEDs) have been extensively studied for highly efficient light sources in deep ultraviolet ... [more] |
ED2014-89 CPM2014-146 LQE2014-117 pp.77-80 |
LQE, ED, CPM |
2014-11-28 13:15 |
Osaka |
|
Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118 |
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] |
ED2014-90 CPM2014-147 LQE2014-118 pp.81-84 |
|