|
|
| Chair |
|
Koichi Maezawa (Univ. of Toyama) |
| Vice Chair |
|
Kunio Tsuda (Toshiba) |
| Secretary |
|
Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) |
| Assistant |
|
Manabu Arai (New JRC), Masataka Higashiwaki (NICT) |
|
|
|
| Chair |
|
Satoru Noge (Numazu National College of Tech.) |
| Vice Chair |
|
Fumihiko Hirose (Yamagata Univ.) |
| Secretary |
|
Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.) |
| Assistant |
|
Takashi Sakamoto (NTT), Yuichi Nakamura (Toyohashi Univ. of Tech.) |
|
|
|
| Chair |
|
Yuzou Oono (Univ. of Tsukuba) |
| Vice Chair |
|
Tatsuya Kunikiyo (Renesas) |
| Secretary |
|
Rihito Kuroda (Tohoku Univ.) |
| Assistant |
|
Tadashi Yamaguchi (Renesas) |
|
| Conference Date |
Thu, May 19, 2016 13:00 - 16:40
Fri, May 20, 2016 09:30 - 12:20 |
| Topics |
crystal growth、devices characterization , etc. |
| Conference Place |
10F Research Project Building, Hamamatsu Campus, Shizuoka University |
| Address |
3-5-1, Johoku, Naka-ku, Hamamatsu-shi, Shizuoka, Japan |
| Transportation Guide |
Board any bus from Bus Stop No. 15 or 16, North Exit Bus Terminal, JR Hamamatsu Station. Get off at Shizuoka Daigaku Bus Stop. (approx. 20 min., approx. 10 departures/hour)
http://www.eng.shizuoka.ac.jp/en_others/location/ |
Contact
Person |
Prof. Yasushi Takano |
Thu, May 19 PM
13:00 - 16:40 |
| (1) |
13:00-13:25 |
Fabrication of CVD single-layer graphene diaphragm above a nano cavity by dry transfer technique |
Hayato Ishida, Makoto Ishida (Toyohashi Tech.), Kazuaki Sawada, Kazuhiro Takahashi (Toyohashi Tech./EIIRIS) |
| (2) |
13:25-13:50 |
Synthesis of graphenes on metal alloy substrates by thermal chemical vapor deposition |
Naoki Kishi, Kazuki Iwama, Takuya Mizutani, Shinya Kato, Tetsuo Soga (NITech) |
| (3) |
13:50-14:15 |
ZnO nanostructures for the fabrication of photoanode towards energy applications |
Mani Navaneethan, Jayaram Archana, Santhana Harish, Tadanobu Koyama, Hiroya Ikeda, Yasuhiro Hayakawa (Shizuoka Univ.) |
| (4) |
14:15-14:40 |
Thermoelectric characteristics of flexible material with ZnO nanostructures |
Masaya Wanami, Selvaraj Shanthi, Yuhei Suzuki, Veluswamy Pandiyarasan (Shizuoka Univ.), Faiz Salleh (Univ. Malaya), Masaru Shimomura, Kenji Murakami, Hiroya Ikeda (Shizuoka Univ.) |
| |
14:40-15:00 |
Break ( 20 min. ) |
| (5) |
15:00-15:25 |
Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors |
Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.) |
| (6) |
15:25-15:50 |
Rectenna circuits with diamond Schottky barrier diodes |
Naoto Kawano, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) |
| (7) |
15:50-16:15 |
Fabrication of a thin plasmonic color sheet embedded with Al subwavelength gratings in parylene |
Hayato Kumagai (Toyohashi Univ.), Hiroaki Honma (Toyohashi Univ./JSPS), Makoto Ishida, Kazuaki Sawada (Toyohashi Univ./EIIRIS), Kazuhiro Takahashi (Toyohashi Univ.) |
| (8) |
16:15-16:40 |
Fabrication of magnetophotonic crystal having cerium substituted yttrium iron garnet for using at near-infrared wavelength |
Takuya Yoshimoto, Taichi Goto, Hiroyuki Takagi, Yuichi Nakamaura, Hironaga Uchida, Mitsuteru Inoue (TUT) |
Fri, May 20 AM
09:30 - 12:20 |
| (9) |
09:30-09:55 |
Chemical solution deposition of SnS thin films using EDTA as complexing agent |
Yusaku Kanda, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.) |
| (10) |
09:55-10:20 |
Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method |
Bayingaerdi Tong, Masaya Ichimura (NITech) |
| (11) |
10:20-10:45 |
Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation |
Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto (TokyoTech) |
| |
10:45-11:05 |
Break ( 20 min. ) |
| (12) |
11:05-11:30 |
Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase |
Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) |
| (13) |
11:30-11:55 |
Gravity effect on the properties of InxGa1-xSb ternary alloys grown at the International Space Station |
Velu NirmalKumar (Shizuoka Univ), Mukannan Arivanandhan (Anna Univ), Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose (Shizuoka Univ), Kaoruho Sakata (Univ.Tokyo), Tetsuo Ozawa (Shizuoka Insti.Sci.&Tech.), Yasunori Okano (OsakaUniv.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ) |
| (14) |
11:55-12:20 |
Interface control for III-V/Si hetero-epitaxy |
Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Koji Matsunaga（NEC)
TEL：+81-44-435-8348 FAX：+81-44-455-8253
E- ： k-     fp   c
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- :  si  jaist |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
Yuichi Nakamura (Toyohashi University of Techonology)
TEL : 0532-44-6734 FAX : 0532-44-6757
e- :   eetut |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-:      e3 |
Last modified: 2016-03-23 10:38:10
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