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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Koichi Maezawa (Univ. of Toyama)
Vice Chair Kunio Tsuda (Toshiba)
Secretary Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Satoru Noge (Numazu National College of Tech.)
Vice Chair Fumihiko Hirose (Yamagata Univ.)
Secretary Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.)
Assistant Takashi Sakamoto (NTT), Yuichi Nakamura (Toyohashi Univ. of Tech.)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Thu, May 19, 2016 13:00 - 16:40
Fri, May 20, 2016 09:30 - 12:20
Topics crystal growth、devices characterization , etc. 
Conference Place 10F Research Project Building, Hamamatsu Campus, Shizuoka University 
Address 3-5-1, Johoku, Naka-ku, Hamamatsu-shi, Shizuoka, Japan
Transportation Guide Board any bus from Bus Stop No. 15 or 16, North Exit Bus Terminal, JR Hamamatsu Station. Get off at Shizuoka Daigaku Bus Stop. (approx. 20 min., approx. 10 departures/hour)
http://www.eng.shizuoka.ac.jp/en_others/location/
Contact
Person
Prof. Yasushi Takano
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, May 19 PM 
13:00 - 16:40
(1) 13:00-13:25 Fabrication of CVD single-layer graphene diaphragm above a nano cavity by dry transfer technique ED2016-13 CPM2016-1 SDM2016-18 Hayato Ishida, Makoto Ishida (Toyohashi Tech.), Kazuaki Sawada, Kazuhiro Takahashi (Toyohashi Tech./EIIRIS)
(2) 13:25-13:50 Synthesis of graphenes on metal alloy substrates by thermal chemical vapor deposition ED2016-14 CPM2016-2 SDM2016-19 Naoki Kishi, Kazuki Iwama, Takuya Mizutani, Shinya Kato, Tetsuo Soga (NITech)
(3) 13:50-14:15 ZnO nanostructures for the fabrication of photoanode towards energy applications ED2016-15 CPM2016-3 SDM2016-20 Mani Navaneethan, Jayaram Archana, Santhana Harish, Tadanobu Koyama, Hiroya Ikeda, Yasuhiro Hayakawa (Shizuoka Univ.)
(4) 14:15-14:40 Thermoelectric characteristics of flexible material with ZnO nanostructures ED2016-16 CPM2016-4 SDM2016-21 Masaya Wanami, Selvaraj Shanthi, Yuhei Suzuki, Veluswamy Pandiyarasan (Shizuoka Univ.), Faiz Salleh (Univ. Malaya), Masaru Shimomura, Kenji Murakami, Hiroya Ikeda (Shizuoka Univ.)
  14:40-15:00 Break ( 20 min. )
(5) 15:00-15:25 Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors ED2016-17 CPM2016-5 SDM2016-22 Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.)
(6) 15:25-15:50 Rectenna circuits with diamond Schottky barrier diodes ED2016-18 CPM2016-6 SDM2016-23 Naoto Kawano, Makoto Kasu, Toshiyuki Oishi (Saga Univ.)
(7) 15:50-16:15 Fabrication of a thin plasmonic color sheet embedded with Al subwavelength gratings in parylene ED2016-19 CPM2016-7 SDM2016-24 Hayato Kumagai (Toyohashi Univ.), Hiroaki Honma (Toyohashi Univ./JSPS), Makoto Ishida, Kazuaki Sawada (Toyohashi Univ./EIIRIS), Kazuhiro Takahashi (Toyohashi Univ.)
(8) 16:15-16:40 Fabrication of magnetophotonic crystal having cerium substituted yttrium iron garnet for using at near-infrared wavelength ED2016-20 CPM2016-8 SDM2016-25 Takuya Yoshimoto, Taichi Goto, Hiroyuki Takagi, Yuichi Nakamaura, Hironaga Uchida, Mitsuteru Inoue (TUT)
Fri, May 20 AM 
09:30 - 12:20
(9) 09:30-09:55 Chemical solution deposition of SnS thin films using EDTA as complexing agent ED2016-21 CPM2016-9 SDM2016-26 Yusaku Kanda, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.)
(10) 09:55-10:20 Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method ED2016-22 CPM2016-10 SDM2016-27 Bayingaerdi Tong, Masaya Ichimura (NITech)
(11) 10:20-10:45 Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation ED2016-23 CPM2016-11 SDM2016-28 Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto (TokyoTech)
  10:45-11:05 Break ( 20 min. )
(12) 11:05-11:30 Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase ED2016-24 CPM2016-12 SDM2016-29 Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)
(13) 11:30-11:55 Gravity effect on the properties of InxGa1-xSb ternary alloys grown at the International Space Station ED2016-25 CPM2016-13 SDM2016-30 Velu NirmalKumar (Shizuoka Univ), Mukannan Arivanandhan (Anna Univ), Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose (Shizuoka Univ), Kaoruho Sakata (Univ.Tokyo), Tetsuo Ozawa (Shizuoka Insti.Sci.&Tech.), Yasunori Okano (OsakaUniv.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ)
(14) 11:55-12:20 Interface control for III-V/Si hetero-epitaxy ED2016-26 CPM2016-14 SDM2016-31 Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E-: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- : sijaist 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Yuichi Nakamura (Toyohashi University of Techonology)
TEL : 0532-44-6734 FAX : 0532-44-6757
e- : eetut 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 


Last modified: 2016-03-23 10:38:10


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