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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Shin-ichiro Takatani (Hitachi), Koichi Murata (NTT)
Assistant Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

Conference Date Fri, Jun 13, 2008 13:00 - 17:25
Sat, Jun 14, 2008 09:00 - 12:10
Topics Process and device technology od semiconductors (surface, interface, reliability, etc.) 
Conference Place Kakuma Campus, Kanazawa University 
Address Kakuma-cho, Kanazawa-shi, 920-1192 Japan.
Transportation Guide http://www.kanazawa-u.ac.jp/e/access/index.html
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Fri, Jun 13 PM 
13:00 - 17:25
(1) 13:00-13:25 Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure ED2008-22 Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST)
(2) 13:25-13:50 I-V and C-V characteristics of p-GaN schottky contacts
-- Carrier concentration and metal work function dependences --
ED2008-23
Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.)
(3) 13:50-14:15 Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT ED2008-24 Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.)
(4) 14:15-14:40 Characterization of N-doped AlSiO film for wide bandgap semiconductors ED2008-25 Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.)
(5) 14:40-15:05 Reliability evaluation of MOCVD-grown InP/InGaAs HBTs ED2008-26 Keita Ogisu, Yoshihiro Fukushima, Kenji Shiojima (Fukui Univ.), Gkou Araki, Hideo Yokohama (NTT-AT)
  15:05-15:20 Break ( 15 min. )
(6) 15:20-15:45 Wet Cleaning Processing of VLSI Devices by Functional Waters ED2008-27 Masako Kodera, Yoshitaka Matsui, Naoto Miyashita (Toshiba)
(7) 15:45-16:10 Particle Performance Improvement of Single-Wafer Wet Cleaning for Next Generation ED2008-28 Ken-ichi Sano, Katsuhiko Miya, Akira Izumi, Jim Snow, Atsuro Eitoku (Dainippon Screen MFG.)
(8) 16:10-16:35 Study on Deterioration of Resist Removal Efficiency in SPM, and Experimental Proof of Ashingless Resist Removal Using Electrolyzed Sulfuric Acid Solution ED2008-29 Tatsuo Nagai, Haruyoshi Yamakawa, Minoru Uchida, Toru Otsu, Norihito Ikemiya (Kurita)
(9) 16:35-17:00 Drying behavior of remaining liquid film and droplet in Marangoni drying ED2008-30 Yasuharu Miyamoto (Grad. school of Shibaura inst. of Tech.), Junji Kamoshida, Jun Yamada (Shibaura Inst. of Tech.)
(10) 17:00-17:25 300mm Wafer Stain Formation by Spin Etching ED2008-31 Satomi Mashimoto, Masaharu Watanabe, Keisuke Sato (SEZ JAPAN)
Sat, Jun 14 AM 
09:00 - 12:10
(11) 09:00-09:25 InP HEMT device technology for ultra-high-speed MMIC ED2008-32 Naoki Hara, Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Toshihiro Ohki (Fujitsu Lab)
(12) 09:25-09:50 Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes ED2008-33 Yuichi Iki, Masaaki Shinada, Mamoru Naoi, Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (TMU)
(13) 09:50-10:15 Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly ED2008-34 Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals)
(14) 10:15-10:40 Heterogeneous integration of InAs thin films by epitaxial lift-off and van der Waals bonding ED2008-35 Hayato Takita, Masahiro Kudo, Nariaki Tanaka, Toshi-kazu Suzuki (JAIST)
  10:40-10:55 Break ( 15 min. )
(15) 10:55-11:20 MBE growth of high In-content InGaAs/InAlAs heterojunction and its spin-orbit interaction in the 2DEG layer ED2008-36 Hyonkwan Choi, Shunsuke Nitta, Syoji Yamada (CNMT JAIST)
(16) 11:20-11:45 Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In surface reconstruction ED2008-37 Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Koichi Maezawa (Univ. Toyama)
(17) 11:45-12:10 Effects of In and Sb mono-layers to form rotated InSb films on a Si(111) substrate ED2008-38 Mitsufumi Saito, Masayuki Mori, Koji Ueda, Koichi Maezawa (Univ. Toyama)

Announcement for Speakers
General Talk (25)Each speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E--mail: er
Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E--mailaecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-8168
E--mail : o
Kunio Tsuda(Toshiba)
TEL : 044-549-2142、FAX : 044-520-1501
E--mail : oba 


Last modified: 2008-05-07 14:48:25


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